BAT17 [INFINEON]
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching); 硅肖特基二极管（混频器应用在VHF / UHF频段用于高速开关）
| 型号： | BAT17 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAT 17…
Silicon Schottky Diode
● For mixer applications in the VHF/UHF range
● For high-speed switching
Type
Ordering Code
(tape and reel)
Pin Configuration Marking
Package
1
2
3
BAT 17
Q62702-A504
Q62702-A775
Q62702-A776
Q62702-A777
A
A
A
C
–
C
53
SOT-23
BAT 17-04
BAT 17-05
BAT 17-06
C
A
C
C/A 54
C/C 55
A/A 56
Maximum Ratings
Parameter
Symbol
VR
Values
4
Unit
V
Reverse voltage
Forward current
IF
130
150
150
mA
mW
°C
Total power dissipation TS ≤ 60 °C
Junction temperature
Operating temperature range
Storage temperature range
Thermal Resistance
Junction-ambient1)
Ptot
Tj
– 55 … + 150
°C
Top
– 55 … + 150
°C
Tstg
Rth JA
Rth JS
≤ 750
≤ 590
K/W
K/W
Junction-soldering point
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.
Semiconductor Group
1
03.96
BAT 17…
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
typ.
Unit
min.
max.
DC Characteristics
Breakdown voltage
IR = 10 µA
V
V(BR)
IR
4
–
–
Reverse current
VR = 3 V
VR = 3 V, TA = 60 °C
VR = 4 V
µA
–
–
–
–
–
–
0.25
1.25
10
Forward voltage
IF = 0.1 mA
IF = 1 mA
VF
mV
200
250
350
275
340
425
350
450
600
IF = 10 mA
Diode capacitance
VR = 0 V f = 1 MHz
CT
rS
pF
0.4
–
0.55
8
0.75
15
Differential forward resistance
IF = 5 mA, f = 10 kHz
Ω
Semiconductor Group
2
BAT 17…
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
f = 1 MHz
Differential forward resistance RF = f (IF)
f = 10 kHz
Semiconductor Group
3
BAT 17…
Forward current IF = f (TA; TS*)
*Package mounted on aluminum
Semiconductor Group
4
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