BAV99W [INFINEON]
Silicon Switching Diode Array (Connected in series For high speed switching applications); 硅开关二极管阵列（串联，高速开关应用）
| 型号： | BAV99W |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Array (Connected in series For high speed switching applications) |
| 文件： | 总4页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV 99W
Silicon Switching Diode Array
• Connected in series
• For high speed switching applications
Type
Marking Ordering Code
A7s Q62702-A1051
Pin Configuration
1=A1 2=C2
Package
BAV 99W
3=C1/A2 SOT-323
Maximum Ratings per Diode
Parameter
Symbol
Values
70
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
V
V
V
R
70
RM
I
I
200
4.5
mA
A
F
Surge forward current, t = 1 µs
Total Power dissipation
FS
P
mW
tot
T = 103 °C
250
S
Junction temperature
Storage temperature
T
150
°C
j
T
- 65 ... + 150
stg
Thermal Resistance
1)
≤
Junction ambient
R
R
430
K/W
thJA
Junction - soldering point
≤ 190
thJS
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
Apr-03-1997
BAV 99W
Electrical Characteristics
Parameter
at T =25°C, unless otherwise specified
A
Symbol
Values
Unit
min.
typ.
max.
DC characteristics per Diode
Breakdown voltage
V
V
V
(BR)
I
= 100 µA
70
-
-
(BR)
Forward voltage
I = 1 mA
mV
F
-
-
-
-
-
-
-
-
715
F
I = 10 mA
855
F
I = 50 mA
1000
1250
F
I = 150 mA
F
Reverse current
I
µA
R
V = 70 V, T = 25 °C
-
-
-
-
-
-
2.5
30
50
R
A
V = 25 V, T = 150 °C
R
A
V = 70 V, T = 150 °C
R
A
AC characteristics per Diode
Diode capacitance
C
pF
ns
D
V = 0 V, f = 1 MHz
-
-
-
-
1.5
6
R
Reverse recovery time
t
rr
I = 10 mA, I = 10 mA, R = 100 Ω
F
R
L
t measured at 1 mA
rr
Semiconductor Group
2
Apr-03-1997
BAV 99W
Forward current I = f (T *;T )
Forward current I = f (V )
F F
F
A
S
* Package mounted on epoxy
T = 25°C
A
300
mA
IF
200
TA
TS
150
100
50
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load
Permissible Pulse Load
R
= f(t )
I
/I
= f(t )
thJS
p
Fmax FDC
p
10 2
10 3
K/W
RthJS
IFmax/IFDC
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -6
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
3
Apr-03-1997
BAV 99W
Forward voltage V = f (T )
Reverse current I = f (T )
R A
F
A
Semiconductor Group
4
Apr-03-1997
相关型号：
BAV99W-T
DIODE 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, PLASTIC, SC-70, 3 PIN, Signal Diode
NXP
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