BAW56 [INFINEON]
Silicon Switching Diode Array (For high-speed switching applications Common anode); 硅开关二极管阵列（对于高速开关应用共阳极）
| 型号： | BAW56 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diode Array (For high-speed switching applications Common anode) |
| 文件： | 总4页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Switching Diode Array
BAW 56
● For high-speed switching applications
● Common anode
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BAW 56
A1s
Q62702-A688
SOT-23
Maximum Ratings per Diode
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
70
V
Peak reverse voltage
Forward current
V
RM
70
IF
200
mA
A
Surge forward current, t = 1 µs
IFS
4.5
Total power dissipation, T
S
= 31 ˚C
P
tot
330
mW
˚C
Junction temperature
T
j
150
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 500
≤ 360
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BAW 56
Electrical Characteristics per Diode
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
V
(BR)
F
70
–
–
V
I(BR) = 100 µA
Forward voltage
V
mV
IF
IF
IF
IF
= 1 mA
= 10 mA
= 50 mA
= 150 mA
–
–
–
–
–
–
–
–
715
855
1000
1250
Reverse current
IR
µA
VR
VR
VR
= 70 V
= 25 V, T
= 70 V, T
–
–
–
–
–
–
2.5
30
50
A
A
= 150 ˚C
= 150 ˚C
AC characteristics
Diode capacitance
C
D
–
–
–
–
2
6
pF
ns
VR
= 0 V, f = 1 MHz
Reverse recovery time
= 10 mA, I = 10 mA, R
measured at I = 1 mA
t
rr
IF
R
L
= 100 Ω
R
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
Semiconductor Group
2
BAW 56
Forward current I
F
= f (T
A
*; TS
)
Reverse current I
R
= f (T )
A
* Package mounted on epoxy
Forward current I
F
= f (V
F
)
Peak forward current IFM = f (t)
= 25 ˚C
T
A
= 25 ˚C
TA
Semiconductor Group
3
BAW 56
Forward voltage V
F
= f (T )
A
Semiconductor Group
4
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