BAY6642 [INFINEON]

HiRel Silicon Switching Diode; HiRel它硅开关二极管
BAY6642
型号: BAY6642
厂家: Infineon    Infineon
描述:

HiRel Silicon Switching Diode
HiRel它硅开关二极管

二极管 开关
文件: 总3页 (文件大小:115K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAY6642  
HiRel Silicon Switching Diode  
Target datasheet  
For high-speed switching applications  
Covers 1N6639 – 1N6643  
Type  
Marking  
Pin Configuration  
Package  
HSL2-1808  
BAY6642  
-
1 Anode  
2 Cathode  
Maximum Ratings  
at TA=25°C; unless otherwise specified  
Parameter  
Symbol  
VRWM  
IO  
Values  
75  
Unit  
V
Working peak reverse voltage  
Average output rectified current 1)  
Forward surge current, t 10ms  
Junction temperature  
300  
2.5  
mA  
A
IFSM  
Tj  
175  
°C  
°C  
°C  
Operating temperature range  
Storage temperature range  
Top  
-65...+175  
Tstg  
-65...+175  
Thermal Resistance  
Junction to soldering point  
Rth JS  
Typ. 100  
K/W  
1) For T > 25 °C the derating of I has to be considered. Nomograms will be available on request.  
A
O
1 of 3  
September 2009  
BAY6642  
Electrical Characteristics  
at TA=25°C; unless otherwise specified  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
-
DC Characteristics  
Breakdown voltage, IR = -10 µA  
Reverse current  
V(BR)  
IR  
100  
-
-
-
V
VR = 75 V  
0.5  
100  
µA  
µA  
VR = 75 V, TA = 150°C  
D.C. Forward voltage  
IF = 1 mA  
IF = 10 mA  
IF = 100 mA  
VF  
-
-
-
-
-
-
-
-
0.62  
0.80  
0.92  
1.20  
V
V
V
V
IF = 500 mA  
AC Characteristics  
Total capacitance, VR = 0V, f = 1 MHz  
CT  
trr  
-
-
-
2.5  
-
pF  
ns  
Reverse recovery time  
4
IF = 10 mA, IR = 10 mA  
measured at IR = 2 mA, RL = 100 Ω  
Forward recovery time, IF = 200 mA  
tfr  
-
-
10  
ns  
HSL2 Package:  
Symbol  
typical width [mm]  
A
4.6  
B
2.0  
C
1.3  
D
0.7  
r1  
0.3  
2 of 3  
September 2009  
BAY6642  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2006  
All Rights Reserved.  
Attention please!  
The information given in this document shall in no event be regarded as a guarantee of  
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or  
hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation warranties of non-infringement of intellectual  
property rights of an third party.  
Information  
For further information on technology, delivery terms and conditions and prices please  
contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For  
information on the types in question please contact your nearest Infineon Technologies  
Office.  
Infineon Technologies Components may only be used in life-support devices or systems with  
the express written approval of Infineon Technologies, if a failure of such components can  
reasonably be expected to cause the failure of that life-support device or system, or to affect  
the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body, or to  
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to  
assume that the health of the user or other persons may be endangered.  
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September 2009  

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