BB535E7904XT [INFINEON]
Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), 30V, Silicon, SOD-323, 2 PIN;
| 型号： | BB535E7904XT |
| 厂家： | 
Infineon |
| 描述： | Variable Capacitance Diode, Ultra High Frequency, 18.7pF C(T), 30V, Silicon, SOD-323, 2 PIN |
| 文件： | 总9页 (文件大小：905K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB535/BB555...
Silicon Tuning Diode
• For UHF-TV-tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
• Pb-free (RoHS compliant) package
BB535
BB555/-02V
1
2
Type
BB535
BB555
Package
SOD323
SCD80
SC79
Configuration
single
single
L (nH) Marking
S
1.8
0.6
0.6
white S
BB
B
BB555-02V
single
Maximum Ratings at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Value
Unit
30
35
V
Diode reverse voltage
Peak reverse voltage
R ≥ 5kΩ
V
V
R
RM
20
mA
°C
Forward current
Operating temperature range
Storage temperature
I
F
T
T
-55 ... 150
-55 ... 150
op
2011-06-15
1
BB535/BB555...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Reverse current
I
nA
R
V = 30 V
-
-
-
-
10
200
R
V = 30 V, T = 85 °C
R
A
AC Characteristics
pF
Diode capacitance
C
T
V = 1 V, f = 1 MHz
17.5
14.01
2.05
1.9
18.7
15
2.24
2.1
20
16.1
2.4
R
V = 2 V, f = 1 MHz
R
V = 25 V, f = 1 MHz
R
V = 28 V, f = 1 MHz
2.3
R
8.2
8.9
9.8
Capacitance ratio
C /C
-
T1 T28
V = 1 V, V = 28 V, f = 1 MHz
R
R
6
6.7
7.5
Capacitance ratio
V = 2 V, V = 25 V, f = 1 MHz
C /C
T2 T25
R
R
1)
Capacitance matching
∆C /C
%
T
T
V = 1V to 28V, f = 1 MHz, 7 diodes sequence,
R
BB535
-
-
-
2.5
1
V = 1V to 28V, f = 1 MHz, 4 diodes sequence,
R
BB555/-02V
0.15
V = 1V to 28V, f = 1 MHz, 7 diodes sequence,
R
BB555/-02V
-
-
0.25
0.58
2
Series resistance
r
0.75
Ω
S
V = 3 V, f = 470 MHz
R
Series inductance
L
-
0.6
-
nH
S
1
For details please refer to Application Note 047
2011-06-15
2
BB535/BB555...
Diode capacitance C = ƒ (V )
f = 1MHz
Normalized diode capacitance
C /C = ƒ(T ); f = 1MHz
(TA) (25°C)
T
R
A
V = Parameter
R
20
pF
1.08
-
16
14
12
10
8
1.04
1.02
1
1V
2V
25V
6
4
0.98
0.96
2
0
0
V
°C
5
10
15
20
30
-30
-10
10
30
50
70
110
V
T
A
R
Temperature coefficient of the diode
Reverse current I = ƒ (T )
R A
capacitance T = ƒ (V )
V = 28 V
Cc
R
R
10 -3
10 3
pA
1/°C
10 2
10 -4
10 1
10 -5
10 0
-10
10 0
10 1
10 2
10
30
50
70
100
V
°C
V
T
A
R
2011-06-15
3
BB535/BB555...
Reverse current I = ƒ(V )
R
R
T = Parameter
A
10 3
pA
85°C
25°C
10 2
10 1
10 0
10 -1
10 0
10 1
10 2
V
V
R
2011-06-15
4
Package SC79
BB535/BB555...
2011-06-15
5
Package SCD80
BB535/BB555...
Package Outline
M
±02
A
±±0.
±0.3+±0±ꢀ
±08
-±0±3
A
2
.
±03
Cathode
marking
±±0±ꢀ
±±0.
±07
Foot Print
±03ꢀ
Marking Layout (Example)
2±±ꢀ, June
Date code
BAR63-±2W
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø.8± mm = 30±±± Pieces/Reel
Reel ø.8± mm = 80±±± Pieces/Reel (2 mm Pitch)
Reel ø33± mm = .±0±±± Pieces/Reel
Standard
4
Reel with 2 mm Pitch
2
±02
±07
Cathode
marking
±04
±09
Cathode
marking
2011-06-15
6
BB535/BB555...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2011-06-15
7
Package SOD323
BB535/BB555...
2011-06-15
8
BB535/BB555...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-15
9
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