BC617 [INFINEON]
NPN Silicon Darlington Transistors (High current gain High collector current); NPN硅达林顿晶体管（高电流增益高集电极电流）
| 型号： | BC617 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon Darlington Transistors (High current gain High collector current) |
| 文件： | 总5页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon Darlington Transistors
BC 617
BC 618
● High current gain
● High collector current
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BC 617
BC 618
–
Q62702-C1137
Q62702-C1138
C
B
E
TO-92
Maximum Ratings
Parameter
Symbol
Values
BC 617
BC 618
55
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
40
50
V
V
80
V
12
I
I
I
I
C
500
800
100
200
625
150
mA
Peak collector current
Base current
CM
B
Peak base current
BM
Total power dissipation, T
C
=66 ˚C
Ptot
mW
˚C
Junction temperature
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case2)
R
th JA
th JC
≤ 200
≤ 135
K/W
R
1)
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
5.91
Semiconductor Group
1
BC 617
BC 618
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BC 617
BC 618
40
55
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BC 617
BC 618
50
80
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
12
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 40 V
CB = 60 V
CB = 40 V, T
CB = 60 V, T
BC 617
BC 618
BC 617
BC 618
–
–
–
–
–
–
–
–
100
100
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
10
Emitter cutoff current
IEB0
–
–
100
nA
VEB = 4 V
DC current gain
h
FE
–
IC
IC
IC
IC
= 100 µA; VCE = 5 V
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
BC 617
BC 618
4000
2000
10000 –
4000
20000 –
10000 –
10000 –
–
–
–
–
–
–
= 10 mA; VCE = 5 V1)
= 200 mA; VCE = 5 V1)
= 1000 mA; VCE = 5 V1)
–
70000
50000
–
–
4000
–
Collector-emitter saturation voltage1)
= 200 mA; I = 0.2 mA
V
CEsat
BEsat
–
–
1.1
V
IC
B
Base-emitter saturation voltage1)
= 200 mA; I = 0.2 mA
V
–
–
1.6
IC
B
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BC 617
BC 618
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
150
3.5
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
CB = 10 V, f = 1 MHz
C
obo
V
Total power dissipation Ptot = f (T
A
; TC)
Collector cutoff current ICB0 = f (T
CB = 40 V, 60 V
A
)
V
Semiconductor Group
3
BC 617
BC 618
Permissible pulse load RthJA = f (t
p)
Transition frequency f
T
= f (I )
C
V
CE = 5 V, f = 20 MHz
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CEsat = f (I
C
)
V
BEsat = f (I )
C
h
FE = 1000, parameter = T
A
h
FE = 1000, parameter = T
A
Semiconductor Group
4
BC 617
BC 618
DC current gain hFE = f (I
C
)
Capacitance C = f (VEB,
VCB)
Semiconductor Group
5
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