BC808W [INFINEON]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | BC808W |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总5页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807W, BC808W
PNP Silicon AF Transistors
3
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BC817W, BC818W (NPN)
2
1
VSO05561
Type
Marking
5As
Pin Configuration
Package
SOT323
SOT323
SOT323
SOT323
SOT323
SOT323
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
BC807-16W
BC807-25W
BC807-40W
BC808-16W
BC808-25W
BC808-40W
5Bs
5Cs
5Es
5Fs
5Gs
Maximum Ratings
Parameter
Symbol
BC 807W
BC 808W
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
V
V
V
45
50
5
25
30
5
V
CEO
CBO
EBO
I
500
1
mA
A
C
I
CM
I
100
200
250
150
mA
B
Peak base current
I
BM
Total power dissipation, T = 130 °C
P
mW
°C
S
tot
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
1)
Junction - soldering point
R
80
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Nov-29-2001
BC807W, BC808W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
I = 10 mA, I = 0
V
V
V
V
(BR)CEO
45
25
-
-
-
-
BC807W
BC808W
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
(BR)CBO
(BR)EBO
50
30
-
-
-
-
BC807W
BC808W
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
-
-
-
E
C
Collector cutoff current
= 25 V, I = 0
I
-
100 nA
CBO
V
CB
E
Collector cutoff current
= 25 V, I = 0 , T = 150 °C
I
-
50
µA
CBO
V
CB
E
A
Emitter cutoff current
= 4 V, I = 0
I
-
100 nA
EBO
V
EB
C
DC current gain 1)
I = 100 mA, V = 1 V
h
-
250
FE
100
160
250
160
250
350
h -grp. 16
C
CE
FE
400
h -grp. 25
FE
630
h -grp. 40
FE
40
-
-
-
-
DC current gain 1)
I = 500 mA, V = 1 V
h
FE
C
CE
Collector-emitter saturation voltage1)
I = 500 mA, I = 50 mA
V
-
0.7
1.2
V
CEsat
BEsat
C
B
Base-emitter saturation voltage 1)
I = 500 mA, I = 50 mA
V
-
C
B
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
BC807W, BC808W
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
Transition frequency
f
-
-
-
200
10
-
-
-
MHz
pF
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
60
eb
V
EB
3
Nov-29-2001
BC807W, BC808W
Permissible Pulse Load R
= f (t )
Total power dissipation P = f (T )
thJS
p
tot
S
10 3
K/W
300
mW
10 2
10 1
10 0
10 -1
200
150
100
50
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Permissible Pulse Load
Collector cutoff current I
= f(T )
A
CBO
P
/ P
= f (t )
V
= 25V
totmax
totDC
p
CB
10 3
EHP00213
105
nA
Ι CBO
-
104
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
max
103
102
0.2
0.5
typ
101
100
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
0
50
100
150
s
˚C
TA
t
p
4
Nov-29-2001
BC807W, BC808W
DC current gain h = f(I )
Transition frequency f = f (I )
FE
C
T
C
V
= 1V
V
= 5V
CE
CE
EHP00210
103
EHP00216
103
MHz
5
5
f T
hFE
100 ˚C
25 ˚C
-50 ˚C
102
5
102
5
101
5
101
100
100
101
102
mA
Ι C
103
10-1
100
101
102 mA 103
Ι C
Base-emitter saturation voltage
Collector-emitter saturation voltage
I = f(V
), h = 10
I = f (V
), h = 10
C
BEsat
FE
C
CEsat
FE
EHP00215
EHP00214
103
103
mA
mA
Ι C
Ι C
150 ˚C
25 ˚C
-50 ˚C
150 ˚C
25 ˚C
-50 ˚C
102
5
102
5
101
5
101
5
100
5
100
5
10-1
0
10-1
0.2
0.4
0.6
V
0.8
0
1.0
2.0
3.0
V
4.0
VCEsat
VBEsat
5
Nov-29-2001
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