BC817K-25-E6433 [INFINEON]
Transistor;
| 型号： | BC817K-25-E6433 |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总11页 (文件大小：852K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817K.../BC818K...
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
6As
6As
6Bs
6Bs
6Cs
6Cs
6Es
6Gs
Pin Configuration
Package
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT323
SOT23
BC817K-16
BC817K-16W
BC817K-25
BC817K-25W
BC817K-40
BC817K-40W
BC818K-16W
BC818K-40
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2011-09-19
1
BC817K.../BC818K...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC817...
BC818...
V
V
V
CEO
CBO
EBO
45
25
Collector-base voltage
BC817...
BC818...
50
30
5
500
1000
100
200
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
mA
I
C
I
CM
I
B
I
BM
mW
°C
P
tot
T ≤ 115 °C, BC817K, BC818K
500
250
S
T ≤ 130 °C, BC817KW, BC818KW
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BC817K, BC818K
BC817KW, BC818KW
≤ 70
≤ 80
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-19
2
BC817K.../BC818K...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BC817...
45
25
-
-
-
-
C
B
I = 10 mA, I = 0 , BC818...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC817...
-
50
30
-
-
-
-
C
E
I = 10 µA, I = 0 , BC818...
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
V
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 25 V, I = 0
-
-
-
-
-
-
0.1
50
CB
CB
E
= 25 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
I
EBO
V
= 4 V, I = 0
EB
C
1)
-
250
400
630
-
DC current gain
h
FE
I = 100 mA, V = 1 V, h -grp.16
100
160
250
40
160
250
350
-
C
CE
FE
I = 100 mA, V = 1 V, h -grp.25
C
CE
FE
I = 100 mA, V = 1 V, h -grp.40
C
CE
FE
I = 500 mA, V = 1 V, all h -grps.
C
CE
FE
1)
Collector-emitter saturation voltage
I = 500 mA, I = 50 mA
V
-
-
0.7
V
CEsat
C
B
1)
Base emitter saturation voltage
I = 500 mA, I = 50 mA
V
-
-
1.2
BEsat
C
B
1
Pulse test: t < 300µs; D < 2%
2011-09-19
3
BC817K.../BC818K...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
170
3
-
-
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
40
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
2011-09-19
4
BC817K.../BC818K...
DC current gain h = ƒ(I )
DC current gain h = ƒ(I )
FE
C
FE
C
V
= 1 V
V
= 1 V
CE
CE
h -grp.16
h -grp.25
FE
FE
10 3
10 3
10 2
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10 1
10 1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
A
A
I
I
C
C
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
I = ƒ(V ), h = 10
FE
C
V
= 1 V
CE
C
CEsat
FE
h -grp.40
FE
10 3
BC 817/818
EHP00223
103
mA
Ι C
150 ˚C
25 ˚C
-50 ˚C
102
5
10 2
101
5
105 °C
85 °C
65 °C
25 °C
-40 °C
100
5
10 1
10-1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
0
0.2
0.4
0.6
V
0.8
A
I
VCEsat
C
2011-09-19
5
BC817K.../BC818K...
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= 25 V
C
BEsat
FE
CBO
BC 817/818
EHP00221
BC 817/818
EHP00222
105
103
mA
nA
Ι CBO
Ι C
150 ˚C
25 ˚C
-50 ˚C
104
102
5
max
103
102
101
5
typ
100
5
101
100
10-1
0
1.0
2.0
3.0
V
4.0
0
50
100
150
˚C
TA
VBEsat
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= parameter in V, f = 2 GHz
Emitter-base capacitance C = ƒ(V )
CE
eb
EB
BC817K, BC818K
BC 817/818
EHP00218
103
55
pF
MHz
5
f T
45
CEB
40
35
30
25
20
15
10
5
102
5
CCB
101
0
100
101
102
mA 103
V
0
2
4
6
8
10 12 14 16
20
Ι C
VCB/VEB
2011-09-19
6
BC817K.../BC818K...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC817K, BC818K
BC817KW, BC818KW
550
550
mW
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
0
0
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
S
Permissible Pulse Load R
BC817K, BC818K
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC817K, BC818K
10 2
10 1
10 0
10 -1
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0.2
10 1
0.5
0,005
0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
T
P
P
2011-09-19
7
BC817K.../BC818K...
Permissible Puls Load R
BC817KW, BC818KW
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC817KW, BC818KW
10 3
K/W
10 3
-
10 2
10 1
10 0
10 -1
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.5
0.2
0.2
0.5
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-09-19
8
Package SOT23
BC817K.../BC818K...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-09-19
9
Package SOT323
BC817K.../BC818K...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2011-09-19
10
BC817K.../BC818K...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-19
11
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