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BC817UPN-E6327 [INFINEON]

Small Signal Bipolar Transistor, 0.5A I(C), NPN and PNP;
BC817UPN-E6327
型号： BC817UPN-E6327
厂家： Infineon    Infineon
描述：

Small Signal Bipolar Transistor, 0.5A I(C), NPN and PNP
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BC817UPN  
NPN Silicon AF Transistor Array  
• For AF stages and driver applications  
• High current gain  
4
3
5
2
1
6
• Low collector-emitter saturation voltage  
• Two (galvanic) internal isolated  
NPN/PNP transistors in one package  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
C1  
B2  
5
E2  
4
6
Tape loading orientation  
TR2  
Marking on SC74 package  
TR1  
Top View  
(for example W1s)  
corresponds to pin 1 of device  
6
5 4  
1
2
3
W1s  
E1  
B1  
C2  
EHA07177  
Position in tape: pin 1  
opposite of feed hole side  
1
2
3
Direction of Unreeling  
SC74_Tape  
Type  
BC817UPN  
Marking  
1Bs  
Pin Configuration  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
Package  
Maximum Ratings  
Parameter  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Peak collector current, t ≤ 10 ms  
Base current  
Peak base current  
Total power dissipation-  
Symbol  
Value  
45  
50  
Unit  
V
V
V
V
CEO  
CBO  
EBO  
5
500  
1000  
100  
200  
330  
mA  
I
C
I
p
CM  
I
B
I
BM  
mW  
°C  
P
tot  
T ≤ 115 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1
2011-09-15  
BC817UPN  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
≤ 105  
Unit  
K/W  
1)  
R
thJS  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
45  
-
-
-
-
-
-
V
Collector-emitter breakdown voltage  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 10 mA, I = 0  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0  
50  
5
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
E
C
Collector-base cutoff current  
I
µA  
CBO  
V
V
= 25 V, I = 0  
-
-
-
-
-
-
0.1  
50  
100 nA  
CB  
CB  
E
= 25 V, I = 0 , T = 150 °C  
E
A
Emitter-base cutoff current  
I
EBO  
V
= 4 V, I = 0  
EB  
C
2)  
-
DC current gain  
h
FE  
I = 100 mA, V = 1 V  
160  
100  
250  
-
400  
-
C
CE  
I = 300 mA, V = 1 V  
C
CE  
2)  
Collector-emitter saturation voltage  
I = 500 mA, I = 50 mA  
V
-
-
0.7  
V
CEsat  
C
B
2)  
Base emitter saturation voltage  
I = 500 mA, I = 50 mA  
V
-
-
1.2  
BEsat  
C
B
AC Characteristics  
Transition frequency  
-
-
-
170  
6
-
-
-
MHz  
pF  
f
T
I = 50 mA, V = 5 V, f = 100 MHz  
C
CE  
Collector-base capacitance  
C
C
cb  
eb  
f = 1 MHz, V = 10 V  
BE  
60  
Emitter-base capacitance  
V
= 0.5 V, f = 1 MHz  
EB  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
Pulse test: t < 300µs; D < 2%  
2
2
2011-09-15  
BC817UPN  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
I = ƒ(V ), h = 10  
FE  
C
V
= 1 V  
CE  
C
CEsat  
FE  
10 3  
BC 817/818  
EHP00223  
103  
mA  
Ι C  
150 ˚C  
25 ˚C  
-50 ˚C  
102  
5
10 2  
101  
5
105 °C  
85 °C  
65 °C  
25 °C  
-40 °C  
100  
5
10 1  
10-1  
10 -5  
10 -4  
10 -3  
10 -2  
10 -1  
10 0  
0
0.2  
0.4  
0.6  
V
0.8  
A
I
VCEsat  
C
Base-emitter saturation voltage  
Collector cutoff current I  
= ƒ(T )  
CBO A  
I = ƒ(V  
), h = 10  
V
= 25 V  
C
BEsat  
FE  
CBO  
BC 817/818  
EHP00221  
BC 817/818  
EHP00222  
105  
103  
mA  
nA  
Ι CBO  
Ι C  
150 ˚C  
25 ˚C  
-50 ˚C  
104  
102  
5
max  
103  
102  
101  
5
typ  
100  
5
101  
100  
10-1  
0
1.0  
2.0  
3.0  
V
4.0  
0
50  
100  
150  
˚C  
TA  
VBEsat  
3
2011-09-15  
BC817UPN  
Transition frequency f = ƒ(I )  
Collector-base capacitance C = ƒ(V )  
cb CB  
T
C
V
= parameter in V, f = 2 GHz  
Emitter-base capacitance C = ƒ(V )  
CE  
eb  
EB  
BC 817/818  
EHP00218  
103  
65  
pF  
MHz  
5
f T  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
102  
5
CEB  
CCB  
6
101  
0
100  
101  
102  
mA 103  
V
0
2
4
8
10 12 14 16  
20  
/V  
V
Ι C  
CB EB  
Total power dissipation P = ƒ(T )  
Permissible Pulse Load R  
= ƒ(t )  
thJS p  
tot  
S
10 3  
K/W  
400  
mW  
10 2  
300  
250  
200  
150  
100  
50  
10 1  
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 -1  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
°C  
s
0
20  
40  
60  
80  
100 120  
150  
T
t
p
S
4
2011-09-15  
BC817UPN  
Permissible Pulse Load  
P
/P  
= ƒ(t )  
totmax totDC  
p
10 3  
10 2  
10 1  
10 0  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
t
p
5
2011-09-15  
Package SC74  
BC817UPN  
Package Outline  
0.2  
2.9  
B
1.1 MAX.  
(2.25)  
+0.1  
0.15  
(0.35)  
-0.06  
6
1
5
2
4
3
+0.1  
A
0.35  
0.95  
-0.05  
M
0.2  
B 6x  
Pin 1  
marking  
0.1 MAX.  
M
0.2  
A
1.9  
Foot Print  
0.5  
0.95  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCW66H  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
3.15  
1.15  
Pin 1  
marking  
6
2011-09-15  
BC817UPN  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
7
2011-09-15  

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