BC818K-16W [INFINEON]
NPN Silicon AF Transistor; NPN硅晶体管自动对焦
| 型号： | BC818K-16W |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistor |
| 文件： | 总11页 (文件大小：860K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC817.../BC818...
NPN Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary types:
BC807.../W, BC808.../W (PNP)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BC817-16
Marking
6As
6As
6Bs
6Bs
6Bs
6Bs
6Cs
6Cs
6Cs
6Cs
6Es
6Es
6Fs
Pin Configuration
Package
1 = B 2 = E 3 = C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
SOT23
SOT23
SOT323
SOT323
SOT23
SOT23
SOT323
SOT323
SOT323
SOT323
SOT23
SOT23
SOT23
SOT23
BC817K-16*
BC817-25
BC817K-25*
BC817-25W
BC817K-25W*
BC817-40
BC817K-40*
BC817-40W
BC817K-40W*
BC818-16W
BC818K-16W*
BC818-25
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
BC818K-25*
BC818-40
BC818K-40*
6Fs
6Gs
6Gs
* Shrinked chip version
1Pb-containing package may be available upon special request
2008-04-11
1
BC817.../BC818...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC817...
BC818...
V
V
V
CEO
CBO
EBO
45
25
Collector-base voltage
BC817...
BC818...
50
30
5
500
1000
100
200
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
mA
mW
°C
I
C
I
CM
I
B
I
BM
P
tot
T ≤ 79 °C, BC817, BC818
330
500
250
S
T ≤ 115 °C, BC817K, BC818K
S
T ≤ 130 °C, BC817W/KW, BC818...W/KW
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BC817, BC818
BC817K, BC818K
BC817W/KW, BC818W/KW
1
≤ 215
≤ 70
≤ 80
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2008-04-11
2
BC817.../BC818...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BC817...
45
25
-
-
-
-
C
B
I = 10 mA, I = 0 , BC818...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC817...
-
50
30
-
-
-
-
C
E
I = 10 µA, I = 0 , BC818...
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
V
(BR)EBO
CBO
E
C
Collector-base cutoff current
I
I
µA
V
V
= 25 V, I = 0
-
-
-
-
-
-
0.1
50
CB
CB
E
= 25 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
EBO
V
= 4 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 100 mA, V = 1 V, h -grp.16
100
160
250
60
100
170
40
160
250
350
-
-
-
-
250
400
630
-
-
-
-
C
CE
FE
I = 100 mA, V = 1 V, h -grp.25
C
CE
FE
I = 100 mA, V = 1 V, h -grp.40
C
CE
FE
2)
2)
2)
I = 300 mA, V = 1 V, h -grp.16
C
CE
FE
I = 300 mA, V = 1 V, h -grp.25
C
CE
FE
I = 300 mA, V = 1 V, h -grp.40
C
CE
FE
3)
I = 500 mA, V = 1 V, all h -grps.
C
CE
FE
1)
Collector-emitter saturation voltage
I = 500 mA, I = 50 mA
V
V
-
-
0.7
V
CEsat
BEsat
C
B
1)
Base emitter saturation voltage
I = 500 mA, I = 50 mA
-
-
1.2
C
B
1
Pulse test: t < 300µs; D < 2%
2
3
For all BC817 and BC818 subtypes
For all BC817K and BC818K subtypes
2008-04-11
3
BC817.../BC818...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
170
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
C
C
cb
eb
1)
V
V
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
-
-
6
3
-
-
CB
CB
2)
Emitter-base capacitance
1)
V
V
1
= 0.5 V, f = 1 MHz
= 0.5 V, f = 1 MHz
-
-
60
40
-
-
EB
EB
2)
For all BC817 and BC818 subtypes
For all BC817K and BC818K subtypes
2
2008-04-11
4
BC817.../BC818...
DC current gain h = ƒ(I )
DC current gain h = ƒ(I )
FE
C
FE
C
V
= 1 V
V
= 1 V
CE
CE
h -grp.16
h -grp.25
FE
FE
10 3
10 3
10 2
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10 1
10 1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
A
C
A
I
I
C
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
I = ƒ(V ), h = 10
FE
C
V
= 1 V
CE
C
CEsat
FE
h -grp.40
FE
10 3
BC 817/818
EHP00223
103
mA
Ι C
150 ˚C
25 ˚C
102
5
-50 ˚C
10 2
101
5
105 °C
85 °C
65 °C
25 °C
-40 °C
100
5
10 1
10-1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
0
0.2
0.4
0.6
V
0.8
A
C
I
VCEsat
2008-04-11
5
BC817.../BC818...
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= 25 V
C
BEsat
FE
CBO
BC 817/818
EHP00221
BC 817/818
EHP00222
105
103
mA
nA
Ι CBO
Ι C
150 ˚C
25 ˚C
-50 ˚C
104
102
5
max
103
102
101
5
typ
100
5
101
100
10-1
0
1.0
2.0
3.0
V
4.0
0
50
100
150
˚C
TA
VBEsat
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= parameter in V, f = 2 GHz
Emitter-base capacitance C = ƒ(V )
BC817, BC818: - - - , BC817K, BC818K:
CE
eb EB
BC 817/818
EHP00218
103
75
pF
MHz
5
f T
60
CEB: BC817/BC818
55
50
45
40
35
30
25
20
15
10
5
CEB: BC817K/BC818K
CCB: BC817/BC818
CCB: BC817K/BC818K
102
5
101
0
100
101
102
mA 103
V
0
2
4
6
8
10 12 14 16
20
V
/V
Ι C
CB EB
2008-04-11
6
BC817.../BC818...
Total power dissipation P = ƒ(T )
BC817, BC818: - - - , BC817K, BC818K:
Total power dissipation P = ƒ(T )
tot S
BC817W/KW, BC818W/KW
tot
S
550
mW
550
mW
450
450
400
350
300
250
200
150
100
50
BC817K, BC818K
BC817, BC818
400
350
300
250
200
150
100
50
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Permissible Pulse Load R
= ƒ(t )
Permissible Pulse Load
thJS
p
BC817, BC818
P
/P
= ƒ(t )
totmax totDC p
BC817, BC818
10 3
10 2
10 1
10 0
10 -1
10 4
-
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
D = 0,5
0,2
0,1
0.2
0,05
0,02
0,01
0,005
0
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2008-04-11
7
BC817.../BC818...
Permissible Pulse Load R
BC817/K, BC818/K
= ƒ(t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC817K, BC818K
10 2
10 1
10 0
10 -1
10 3
-
10 2
D = 0
0.005
0.01
0.02
0.05
0.1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0.2
10 1
0.5
0,005
0
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
T
T
P
P
Permissible Puls Load R
BC817W/KW, BC818W/KW
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
p
BC817W/KW, BC818W/KW
10 3
K/W
10 3
-
10 2
D = 0
10 2
10 1
10 0
0.005
0.01
0.02
0.05
0.1
10 1
0.5
0.2
0.2
0.5
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2008-04-11
8
Package SOT23
BC817.../BC818...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2008-04-11
9
Package SOT323
BC817.../BC818...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2008-04-11
10
BC817.../BC818...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2008-04-11
11
相关型号：
BC818K16WH6327XTSA1
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
BC818K25E6327HTSA1
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
INFINEON
BC818K40E6327HTSA1
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
BC818L99Z
Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明