BC846UE6327 [INFINEON]

Transistor;
BC846UE6327
型号: BC846UE6327
厂家: Infineon    Infineon
描述:

Transistor

文件: 总10页 (文件大小:843K)
中文:  中文翻译
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BC846S/ BC846U/ BC847S  
NPN Silicon AF Transistor Arrays  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated transistors  
with good matching in one package  
BC846S / U, BC847S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BC846S  
BC846U  
BC847S  
C1  
B2  
E2  
4
6
5
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07178  
Type  
Marking  
1Ds  
1Ds  
Pin Configuration  
Package  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
BC846S  
BC846U  
BC847S  
1Cs  
2012-04-04  
1
BC846S/ BC846U/ BC847S  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BC846S/U  
BC847S  
V
V
V
CEO  
CBO  
EBO  
tot  
65  
45  
Collector-base voltage  
BC846S/U  
BC847S  
80  
50  
6
100  
200  
Emitter-base voltage  
Collector current  
mA  
I
C
Peak collector current, t 10 ms  
I
CM  
P
p
mW  
Total power dissipation-  
T 115 °C, BC846S, BC847S  
250  
250  
150  
S
T 118 °C, BC846U  
S
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
BC846S, BC847S  
BC847U  
Symbol  
Value  
Unit  
K/W  
1)  
R
thJS  
140  
130  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2012-04-04  
2
BC846S/ BC846U/ BC847S  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 10 mA, I = 0 , BC846S/U  
-
-
65  
45  
-
-
C
B
I = 10 mA, I = 0 , BC847S  
C
B
Collector-base breakdown voltage  
I = 10 µA, I = 0 , BC846S/U  
-
-
80  
50  
-
-
C
E
I = 10 µA, I = 0 , BC847S  
C
E
Emitter-base breakdown voltage  
I = 1 µA, I = 0  
-
6
-
E
C
Collector-base cutoff current  
I
µA  
-
CBO  
V
V
= 45 V, I = 0  
-
-
-
-
0.015  
5
CB  
CB  
E
= 30 V, I = 0 , T = 150 °C  
E
A
DC current gain-  
I = 10 µA, V = 5 V  
h
FE  
-
250  
290  
-
C
CE  
I = 2 mA, V = 5 V  
200  
450  
C
CE  
1)  
Collector-emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
V
mV  
CEsat  
-
-
90  
200  
250  
600  
C
B
I = 100 mA, I = 5 mA  
C
B
1)  
Base emitter saturation voltage  
I = 10 mA, I = 0.5 mA  
V
BEsat  
-
-
700  
900  
-
-
C
B
I = 100 mA, I = 5 mA  
C
B
1)  
Base-emitter voltage  
I = 2 mA, V = 5 V  
V
BE(ON)  
580  
-
660  
-
700  
770  
C
CE  
I = 10 mA, V = 5 V  
C
CE  
1
Pulse test: t < 300µs; D < 2%  
2012-04-04  
3
BC846S/ BC846U/ BC847S  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
-
250  
0.95  
9
-
-
-
MHz  
pF  
Transition frequency  
f
T
I = 20 mA, V = 5 V, f = 100 MHz  
C
CE  
-
-
Collector-base capacitance  
= 10 V, f = 1 MHz  
C
C
cb  
V
CB  
Emitter-base capacitance  
= 0.5 V, f = 1 MHz  
eb  
V
EB  
Short-circuit input impedance  
I = 2 mA, V = 5 V, f = 1 kHz  
h
h
h
h
F
-
-
-
-
-
4.5  
2
-
-
kΩ  
11e  
12e  
21e  
22e  
C
CE  
-4  
Open-circuit reverse voltage transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
10  
C
CE  
Short-circuit forward current transf. ratio  
I = 2 mA, V = 5 V, f = 1 kHz  
330  
30  
-
-
-
C
CE  
Open-circuit output admittance  
-
µS  
dB  
I = 2 mA, V = 5 V, f = 1 kHz  
C
CE  
10  
Noise figure  
I = 200 µA, V = 5 V, f = 1 kHz,  
C
CE  
f = 200 Hz, R = 2 kΩ  
S
2012-04-04  
4
BC846S/ BC846U/ BC847S  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 5 V  
I = ƒ(V  
), h = 20  
CE  
C
CEsat  
FE  
EHP00365  
EHP00367  
10 2  
103  
mA  
5
100 C  
h FE  
Ι C  
100 C  
25 C  
-50 C  
25 C  
-50 C  
101  
5
102  
5
101  
5
100  
5
10 -1  
0
100  
10-2  
5 10 -1  
5 10 0  
5 101  
10 2  
mA  
0.1  
0.2  
0.3  
0.4  
V
0.5  
Ι C  
VCEsat  
Base-emitter saturation voltage  
Collector cutoff current I  
= ƒ(T )  
CBO A  
I = ƒ(V  
), h = 20  
V
= 30 V  
C
BEsat  
FE  
CBO  
EHP00381  
EHP00364  
10 4  
nA  
102  
ΙCB0  
Ι C  
mA  
10 3  
5
100  
25  
-50  
C
C
C
101  
5
max  
10 2  
5
typ  
10 1  
5
100  
5
100  
5
10-1  
10 -1  
0
0.2  
0.4  
0.6  
0.8  
V
1.2  
0
50  
100  
150  
C
VBEsat  
TA  
2012-04-04  
5
BC846S/ BC846U/ BC847S  
Transition frequency f = ƒ(I )  
Collector-base capacitance C = ƒ(V  
)
T
C
cb  
CB  
V
= 5 V  
Emitter-base capacitance C = ƒ(V )  
CE  
eb EB  
EHP00363  
103  
13  
pF  
MHz  
5
f T  
11  
10  
9
8
7
102  
5
6
CEB  
5
4
3
2
1
CCB  
101  
0
V
0
4
8
12  
16  
22  
/V  
10-1  
5
10 0  
5
101  
10 2  
mA  
V
CB EB  
Ι C  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BC846S, BC847S  
BC846U  
300  
mW  
300  
mW  
250  
225  
200  
175  
150  
125  
100  
75  
250  
225  
200  
175  
150  
125  
100  
75  
50  
50  
25  
25  
0
0
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
15 30 45 60 75 90 105 120  
150  
T
T
S
S
2012-04-04  
6
BC846S/ BC846U/ BC847S  
Permissible Pulse Load R  
BC846S, BC847S  
= ƒ(t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BC846S, BC847S  
10 3  
K/W  
10 3  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -1  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Puls Load R  
BC846U  
= ƒ (t )  
Permissible Pulse Load  
P /P = ƒ(t )  
totmax totDC  
thJS  
p
p
BC846U  
10 3  
K/W  
10 3  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 2  
10 1  
10 0  
0.2  
10 1  
10 0  
10 -1  
D=0.5  
0.2  
0.5  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2012-04-04  
7
Package SC74  
BC846S/ BC846U/ BC847S  
Package Outline  
0.2  
2.9  
B
1.1 MAX.  
(2.25)  
+0.1  
0.15  
(0.35)  
-0.06  
6
1
5
2
4
3
+0.1  
A
0.35  
0.95  
-0.05  
M
0.2  
B 6x  
Pin 1  
marking  
0.1 MAX.  
M
0.2  
A
1.9  
Foot Print  
0.5  
0.95  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCW66H  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
3.15  
1.15  
Pin 1  
marking  
2012-04-04  
8
Package SOT363  
BC846S/ BC846U/ BC847S  
Package Outline  
0.2  
2
0.1  
0.9  
+0.1  
-0.05  
6x  
0.2  
0.1 MAX.  
0.1  
M
0.1  
A
6
1
5
4
3
2
Pin 1  
marking  
+0.1  
0.15  
-0.05  
0.65 0.65  
M
0.2  
A
Foot Print  
0.3  
0.65  
0.65  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCR108S  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
1.1  
2.15  
Pin 1  
marking  
2012-04-04  
9
BC846S/ BC846U/ BC847S  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2012-04-04  
10  

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