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BC847CW [INFINEON]

NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage); NPN硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益低集电极 - 发射极饱和电压）
BC847CW
型号： BC847CW
厂家： Infineon    Infineon
描述：

NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
NPN硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益低集电极 - 发射极饱和电压）

晶体 驱动器 晶体管
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NPN Silicon AF Transistor  
BC 846 W ... BC 850 W  
Features  
● For AF input stages and driver applications  
● High current gain  
● Low collector-emitter saturation voltage  
● Low noise between 30Hz and 15 kHz  
● Complementary types: BC 856 W, BC 857 W,  
BC 858 W,BC 859 W,  
BC 860 W (PNP)  
Type  
Marking  
Ordering code  
(tape and reel)  
Pin Configuration  
Package  
1
2
3
B
E
C
BC 846 AW  
BC 846 BW  
BC 847 AW  
BC 847 BW  
BC 847 CW  
BC 848 AW  
BC 848 BW  
BC 848 CW  
BC 849 BW  
BC 849 CW  
BC 850 BW  
BC 850 CW  
1 As  
1 Bs  
1 Es  
1 Fs  
1 Gs  
1 Js  
1 Ks  
1 Ls  
2 Bs  
2 Cs  
2 Fs  
2 Gs  
Q62702-C2319  
Q62702-C2279  
Q62702-C2304  
Q62702-C2305  
Q62702-C2306  
Q62702-C2307  
Q62702-C2308  
Q62702-C2309  
Q62702-C2310  
Q62702-C2311  
Q62702-C2312  
Q62702-C2313  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
SOT 323  
Semiconductor Group  
1
04.96  
BC 846W ... BC 850W  
Maximum Ratings  
Description  
BC846W BC 847 W  
BC 849 W BC 848 W  
BC 840 W  
Symbol  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CBO  
CES  
EBO  
65  
80  
80  
6
45  
50  
30  
30  
30  
5
V
V
50  
V
6
V
IC  
100  
mA  
mA  
mW  
˚C  
˚C  
Collector peak current  
Total power dissipation, T  
Junction temperature  
ICM  
200  
Ptot  
250  
S
=115 ˚C  
Tj  
150  
Storage temperature range  
Tstg  
–65 to 150  
Thermal Resistance  
Junction - ambient1)  
R
th JA  
th JS  
≤ 240  
≤ 105  
K/W  
K/W  
Junction - soldering point  
R
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/1 cm2 Cu.  
Semiconductor Group  
2
BC 846W ... BC 850W  
Characteristic at T  
A
= 25 ˚C, unless otherwise specified.  
Description  
Symbol  
Ratings  
typ.  
Unit  
min.  
max.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
(BR)CEO  
(BR)CBO  
V
V
IC  
= 10 mA  
BC 846 W  
65  
45  
30  
–
–
–
–
–
–
BC 847 W, BC 850 W  
BC 848 W, BC 849 W  
Collector-base breakdown voltage1)  
V
80  
50  
30  
–
–
–
–
–
–
IC  
= 100 µA  
BC 846 W  
BC 847 W, BC 850 W  
BC 848 W, BC 849 W  
V
(BR)CBO  
(BR)EBO  
V
V
Collector-emitter breakdown voltage  
80  
50  
30  
–
–
–
–
–
–
IC  
= 10 µA, VBE = 0  
BC 846 W  
BC 847 W, BC 850 W  
BC 848 W, BC 849 W  
Emitter-base breakdown voltage  
V
IE  
= 10 µA  
BC 846 W, BC 847 W  
BC 848 W, BC 849 W  
BC 850  
6
5
–
–
–
–
Collector-base cutoff current  
ICBO  
V
V
CB = 30 V  
CB = 30 V, T  
–
–
–
–
15  
5
nA  
µA  
A
= 150 ˚C  
hFE  
–
DC current gain  
–
–
–
140  
250  
480  
–
–
–
I
C
C
= 10 µA, VCE = 5 V BC 846 AW ... BC 848 AW  
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
110  
200  
420  
180  
290  
520  
220  
450  
800  
I
= 2 mA, VCE = 5 V BC 846 AW ... BC 848 AW  
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
Collector-emitter saturation voltage1)  
VCEsat  
VCEsat  
VCEsat  
mV  
mV  
mV  
–
–
90  
900  
250  
650  
I
C
= 10 mA, I  
= 100 mA, I  
B
= 0.5 mA  
= 5 mA  
IC  
B
Base-emitter saturation voltage1)  
–
–
700  
900  
–
–
I
C
= 10 mA, I  
= 100 mA, I  
B
= 0.5 mA  
= 5 mA  
IC  
B
Base-emitter voltage1)  
580  
–
660  
–
700  
770  
I
C
= 2 mA, VCE = 0.5 mA  
= 10 mA, VCE = 5 mA  
IC  
1)Pulse test : t ≤ 300 µs, D= 2 %.  
Semiconductor Group  
3
BC 846W ... BC 850W  
Characteristics at T  
A
= 25 ˚C, unless otherwise specified.  
Description  
Symbol  
Ratings  
typ.  
Unit  
min.  
max.  
AC Characteristics  
Transition frequency  
f
T
MHz  
pF  
I
C
= 20 mA, VCE = 5 V, f = 100 MHz  
Output capacitance  
CB = 10 V, f = 1 MHz  
Input capacitance  
EB = 0.5 V, f = 1 MHz  
Short-circuit input impedance  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 846 AW ... BC 849 AW  
–
–
–
250  
2
–
–
–
C
obo  
ibo  
V
C
pF  
V
10  
h
h
h
h
11e  
12e  
21e  
22e  
kΩ  
IC  
–
–
–
2.7  
4.5  
8.7  
–
–
–
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
10–4  
Open-circuit reverse voltage transfer ratio  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 846 AW ... BC 849 AW  
IC  
–
–
–
1.5  
2.0  
3.0  
–
–
–
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
Short-circuit forward current transfer ratio  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 846 AW ... BC 849 AW  
-
IC  
–
–
–
200  
330  
600  
–
–
–
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
Open-circuit output admittance  
= 2 mA, VCE = 5 V, f = 1 kHz  
BC 846 AW ... BC 849 AW  
µS  
dB  
µV  
IC  
–
–
–
18  
30  
60  
–
–
–
BC 846 BW ... BC 850 BW  
BC 847 CW ... BC 850 CW  
Noise figure  
= 0.2 mA, VCE = 5 V, R  
F
V
IC  
S
= 2 kΩ  
= 2 kΩ  
BC 849 W  
BC 850 W  
BC 849 W  
BC 850 W  
1.4  
1.4  
1.2  
1.0  
4
3
4
4
f = 30 Hz ... 15 kHz  
f = 1 kHz, ∆f = 200 Hz  
–
–
–
Equivalent noise voltage  
= 0.2 mA, VCE = 5 V, R  
f = 10 Hz ... 50 Hz  
n
IC  
S
BC 850 W  
–
–
0.135  
Curves see BC 846 ... BC 840  
Semiconductor Group  
4
BC 846W ... BC 850W  
Total power dissipation Ptot = f (T  
* Package mounted on epoxy  
A
*; TS  
)
Collector-base capacitance CCB0 = f (VCB0  
Emitter-base capacitance CEB0 = f (VEB0  
)
)
Permissible pulse load Ptot max/Ptot DC = f (t  
p)  
Transition frequency f  
T
= f (I )  
C
V
CE = 5 V  
Semiconductor Group  
5
BC 846W ... BC 850W  
Collector cutoff current ICB0 = f (T  
A
)
Collector-emitter saturation voltage  
V
CB = 30 V  
IC = f (VCEsat), hFE = 20  
DC current gain hFE = f (I  
C)  
Base-emitter saturation voltage  
V
CE = 5 V  
IC = f (VBEsat), hFE = 20  
Semiconductor Group  
6
BC 846W ... BC 850W  
h parameter h  
e
= f (IC) normalized  
h parameter h  
e
= f (VCE) normalized  
VCE = 5 V  
I
C
= 2 mA  
Noise figure F = f (VCE  
)
Noise figure F = f (f)  
= 0.2 mA, VCE = 5 V, R = 2 kΩ  
IC  
= 0.2 mA, R = 2 kΩ, f = 1 kHz  
S
I
C
S
Semiconductor Group  
7
BC 846W ... BC 850W  
Noise figure F = f (I  
C)  
Noise figure F = f (I  
C)  
V
CE = 5 V, f = 120 Hz  
VCE = 5 V, f = 1 kHz  
Noise figure F = f (I )  
C
V
CE = 5 V, f = 10 kHz  
Semiconductor Group  
8

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