BC847C [INFINEON]
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain); NPN硅晶体管自动对焦（ AF对于输入级和驱动器应用高电流增益）
| 型号： | BC847C |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) |
| 文件： | 总8页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Transistors
BC 846 ... BC 850
Features
● For AF input stages and driver applications
● High current gain
● Low collector-emitter saturation voltage
● Low noise between 30 Hz and 15 kHz
● Complementary types: BC 856, BC 857,
BC 859, BC 860 (PNP)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BC 846 A
BC 846 B
BC 847 A
BC 847 B
BC 847 C
BC 848 A
BC 848 B
BC 848 C
BC 849 B
BC 849 C
BC 850 B
BC 850 C
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
2Bs
2Cs
2Fs
2Gs
Q62702-C1772
Q62702-C1746
Q62702-C1884
Q62702-C1687
Q62702-C1715
Q62702-C1741
Q62702-C1704
Q62702-C1506
Q62702-C1727
Q62702-C1713
Q62702-C1885
Q62702-C1712
B
E
C
SOT-23
1)For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BC 846 ... BC 850
Maximum Ratings
Parameter
Symbol
Values
Unit
BC 846 BC 847 BC 848
BC 850 BC 849
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
V
CE0
CB0
CES
EB0
65
80
80
6
45
50
50
6
30
30
30
5
V
I
I
I
I
C
100
200
200
200
330
150
mA
Peak collector current
Peak base current
CM
BM
EM
Peak emitter current
Total power dissipation, T
Junction temperature
S
=71 ˚C
P
tot
mW
˚C
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 310
≤ 240
K/W
Junction - soldering point
R
1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2
BC 846 ... BC 850
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)CES
V(BR)EB0
V
IC
= 10 mA
BC 846
65
45
30
–
–
–
–
–
–
BC 847, BC 850
BC 848, BC 849
Collector-base breakdown voltage
IC
= 10 µA
BC 846
80
50
30
–
–
–
–
–
–
BC 847, BC 850
BC 848, BC 849
Collector-emitter breakdown voltage
IC
= 10 µA, VBE = 0
BC 846
80
50
30
–
–
–
–
–
–
BC 847, BC 850
BC 848, BC 849
Emitter-base breakdown voltage
IE
= 1 µA
BC 846, BC 847
BC 848, BC 849, BC 850
6
5
–
–
–
–
Collector cutoff current
ICB0
V
CB = 30 V
–
–
–
–
15
5
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
DC current gain
h
FE
–
IC
= 10 µA, VCE = 5 V
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
= 2 mA, VCE = 5 V
–
–
–
140
250
480
–
–
–
IC
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
110
200
420
180
290
520
220
450
800
Collector-emitter saturation voltage1)
VCEsat
VBEsat
VBE(on)
mV
–
–
90
200
250
600
I
C
= 10 mA, I
= 100 mA, I
B
= 0.5 mA
= 5 mA
IC
B
Base-emitter saturation voltage1)
–
–
700
900
–
–
I
C
= 10 mA, I
= 100 mA, I
B
= 0.5 mA
= 5 mA
IC
B
Base-emitter voltage
I
C
= 2 mA, VCE = 5 V
= 10 mA, VCE = 5 V
580
–
660
–
700
770
IC
1)Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BC 846 ... BC 850
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC characteristics
Transition frequency
f
T
–
–
–
250
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
CB = 0.5 V, f = 1 MHz
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
C
obo
ibo
V
C
8
V
h
h
h
h
11e
12e
21e
22e
kΩ
IC
–
–
–
2.7
4.5
8.7
–
–
–
BC 846 B … BC 850 B
BC 847 C … BC 850 C
10– 4
Open-circuit reverse voltage transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
IC
–
–
–
1.5
2.0
3.0
–
–
–
BC 846 B … BC 850 B
BC 847 C … BC 850 C
Short-circuit forward current transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
–
IC
–
–
–
200
330
600
–
–
–
BC 846 B … BC 850 B
BC 847 C … BC 850 C
Open-circuit output admittance
= 2 mA, VCE = 5 V, f = 1 kHz
BC 846 A … BC 848 A
µS
dB
IC
–
–
–
18
30
60
–
–
–
BC 846 B … BC 850 B
BC 847 C … BC 850 C
Noise figure
= 0.2 mA, VCE = 5 V, R
F
V
IC
S
= 2 kΩ
BC 849
f= 30 Hz … 15 kHz
–
–
–
–
1.4
1.4
1.2
1.0
4
3
4
4
BC 850
BC 849
BC 850
f= 1 kHz, ∆ f = 200 Hz
Equivalent noise voltage
n
–
–
0.135 µV
I
C
= 0.2 mA, VCE = 5 V, R
S
= 2 kΩ
BC 850
f= 10 Hz … 50 Hz
Semiconductor Group
4
BC 846 ... BC 850
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
5
BC 846 ... BC 850
Collector cutoff current ICB0 = f (T
A
)
Collector-emitter saturation voltage
V
CB = 30 V
IC = f (VCEsat), hFE = 20
DC current gain hFE = f (I
C)
Base-emitter saturation voltage
V
CE = 5 V
IC = f (VBEsat), hFE = 20
Semiconductor Group
6
BC 846 ... BC 850
h parameter h
e
= f (IC) normalized
h parameter h
e
= f (VCE) normalized
VCE = 5 V
I
C
= 2 mA
Noise figure F = f (VCE
)
Noise figure F = f (f)
= 0.2 mA, VCE = 5 V, R = 2 kΩ
IC
= 0.2 mA, R = 2 kΩ, f = 1 kHz
S
I
C
S
Semiconductor Group
7
BC 846 ... BC 850
Noise figure F = f (I
C)
Noise figure F = f (I
C)
V
CE = 5 V, f = 120 Hz
VCE = 5 V, f = 1 kHz
Noise figure F = f (I )
C
V
CE = 5 V, f = 10 kHz
Semiconductor Group
8
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