BC848BWE6433 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon,;
| 型号： | BC848BWE6433 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, |
| 文件： | 总15页 (文件大小：895K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846...-BC850...
NPN Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types:
BC856...-BC860...(PNP)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1Pb-containing package may be available upon special request
2010-06-28
1
BC846...-BC850...
Type
BC846A
BC846B
BC846BW
BC847A
Marking
1As
1Bs
1Bs
1Es
1Fs
1Fs
1F
1Fs
1Gs
1Gs
1Js
Pin Configuration
Package
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
SOT323
SOT23
SOT23
TSFP-3
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
TSLP-3-1
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
BC847B
BC847BF*
BC847BL3
BC847BW
BC847C
BC847CW
BC848A
BC848B
1Ks
1K
BC848BL3
BC848BW
BC848C
BC848CW
BC849B
BC849C
BC849CW
BC850B
1Ks
1Ls
1Ls
2Bs
2Cs
2Cs
2Fs
2Fs
2Gs
2Gs
BC850BW
BC850C
BC850CW
* Not for new design
2010-06-28
2
BC846...-BC850...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
V
V
V
V
CEO
CES
CBO
EBO
65
45
30
Collector-emitter voltage
BC846...
BC847..., BC850...
BC848..., BC849...
80
50
30
Collector-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
80
50
30
Emitter-base voltage
BC846...
BC847..., BC850...
BC848..., BC849...
6
6
6
100
200
mA
Collector current
Peak collector current, t ≤ 10 ms
I
C
I
p
CM
mW
Total power dissipation-
P
tot
T ≤ 71 °C, BC846-BC850
330
250
250
250
S
T ≤ 128 °C, BC847F
S
T ≤ 135 °C, BC847L3-BC848L3
S
T ≤ 124 °C, BC846W-BC850W
S
150
-65 ... 150
°C
Junction temperature
Storage temperature
T
j
T
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
Unit
K/W
1)
R
thJS
BC846-BC850
BC847F
≤ 240
≤ 90
BC847L3-BC848L3
BC846W-BC850W
≤ 60
≤ 105
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2010-06-28
3
BC846...-BC850...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BC846...
65
45
30
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BC847..., BC850...
C
B
I = 10 mA, I = 0 , BC848..., BC849...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC846...
80
50
30
-
-
-
-
-
-
C
E
I = 10 µA, I = 0 , BC847..., BC850...
C
E
I = 10 µA, I = 0 , BC848..., BC849...
C
E
Emitter-base breakdown voltage
I = 0 , I = 10 µA
-
6
-
(BR)EBO
CBO
E
C
Collector-base cutoff current
I
µA
-
V
V
= 45 V, I = 0
-
-
0.015
5
-
-
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
1)
DC current gain
I = 10 µA, V = 5 V, h -grp.A
h
FE
-
-
-
140
250
480
180
290
520
-
-
-
C
CE
FE
I = 10 µA, V = 5 V, h -grp.B
C
CE
FE
I = 10 µA, V = 5 V, h -grp.C
C
CE
FE
I = 2 mA, V = 5 V, h -grp.A
110
200
420
220
450
800
C
CE
FE
I = 2 mA, V = 5 V, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, h -grp.C
C
CE
FE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
90
200
250
600
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 0.5 mA
-
-
700
900
-
-
C
B
I = 100 mA, I = 5 mA
C
B
1)
Base-emitter voltage
I = 2 mA, V = 5 V
BE(ON)
580
-
660
-
700
770
C
CE
I = 10 mA, V = 5 V
C
CE
1
Pulse test: t < 300µs; D < 2%
2010-06-28
4
BC846...-BC850...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
250
0.95
9
-
-
-
MHz
pF
Transition frequency
f
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
h
h
h
h
kΩ
11e
-
-
-
2.7
4.5
8.7
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
10
12e
21e
22e
-
-
-
1.5
2
3
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
-
-
-
200
330
600
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
µS
-
-
-
18
30
60
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-
1.2
4
dB
Noise figure
F
V
I = 200 µA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ, BC849..., BC850...
S
Equivalent noise voltage
-
-
0.135 µV
n
I = 200 µA, V = 5 V, R = 2 kΩ,
C
CE
S
f = 10 ... 50 Hz , BC850...
2010-06-28
5
BC846...-BC850...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 20
CE
C
CEsat
FE
EHP00365
EHP00367
10 2
103
mA
5
100 C
h FE
Ι C
100 C
25 C
-50 C
25 C
-50 C
102
5
101
5
101
5
100
5
10 -1
0
100
10-2
5 10 -1
5 10 0
5 101
10 2
mA
0.1
0.2
0.3
0.4
V
0.5
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CB
EHP00415
EHP00364
102
10 4
nA
Ι CB0
Ι C
mA
100
25
-50
C
C
C
max
10 3
5
101
5
typ
10 2
5
100
5
101
5
10 0
10-1
0
50
100
150
˚C
TA
0
0.2
0.4
0.6
0.8
V
1.2
VBEsat
2010-06-28
6
BC846...-BC850...
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 5 V
Emitter-base capacitance C = ƒ(V )
CE
eb EB
EHP00363
103
13
pF
MHz
5
f T
11
10
9
8
7
102
5
6
CEB
5
4
3
2
1
CCB
101
0
V
10-1
5
10 0
5
101
10 2
0
4
8
12
16
22
/V
mA
V
CB EB
Ι C
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC846-BC850
BC847BF
360
mW
300
mW
300
270
240
210
180
150
120
90
250
225
200
175
150
125
100
75
60
50
30
25
0
0
0
°C
0
15 30 45 60 75 90 105 120
150
15 30 45 60 75 90 105 120
150
°C
S
T
T
S
2010-06-28
7
BC846...-BC850...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC847BL3/BC848BL3
BC846W-BC850W
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
BC847BF
= ƒ (t )
thJS p
P
totmax totDC
p
BC846/W-BC850/W
10 2
K/W
EHP00362
103
Ptotmax
PtotDC
t p
t p
T
D
=
T
D=0.5
0.2
10 1
102
5
D
0
=
0.1
0.005
0.01
0.02
0.05
0.1
0.05
0.02
0.01
0.005
0
0.2
0.5
10 0
101
5
10 -1
100
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10-6 10-5 10-4 10-3 10-2
s
100
s
t
p
t p
2010-06-28
8
BC846...-BC850...
Permissible Pulse Load
/P = ƒ(t )
Permissible Puls Load R
BC847BL3, BC848BL3
= ƒ (t )
thJS p
P
totmax totDC
p
BC847BF
10 3
10 2
10 1
10 0
10 -1
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.5
0.2
0.1
0.2
0.05
0.02
0.01
0.005
D = 0
0.5
10 1
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
t
p
p
Permissible Pulse Load
/P = ƒ(t )
Noise figure F = ƒ(V )
CE
P
I = 0.2mA, R = 2kΩ , f = 1kHz
totmax totDC
p
C S
BC847BL3, BC848BL3
10 3
BC 846...850
EHP00370
20
dB
F
15
10
5
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.2
0.5
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10-1
5
10 0
101
V
10 2
s
t
VCE
p
2010-06-28
9
BC846...-BC850...
Noise figure F = ƒ(f)
I = 0.2 mA, V = 5V, R = 2 kΩ
Noise figure F = ƒ(I )
C
V = 5V, f = 120Hz
C
CE
S
CE
BC 846...850
EHP00371
BC 846...850
EHP00372
20
dB
20
dB
F
F
15
10
15
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
10
Ω
500
5
0
5
0
1 k
Ω
10-3
10-2
10-1
100
101
mA
10-2
10 -1
100
101 kHz 10 2
Ι C
f
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 5V, f = 1kHz
V
= 5V, f = 10kHz
CE
CE
BC 846...850
EHP00374
BC 846...850
EHP00373
20
20
dB
dB
F
F
15
15
R
S = 1 M
Ω
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
100 k
Ω
10
10
10 k
Ω
500
Ω
1 k
Ω
5
0
5
0
Ω
500
1 kΩ
10-3
10 -2
10 -1
10 0
10 1
mA
10-3
10-2
10-1
100
101
mA
Ι C
Ι C
2010-06-28
10
Package SOT23
BC846...-BC850...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2010-06-28
11
Package SOT323
BC846...-BC850...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2010-06-28
12
Package TSFP-3
BC846...-BC850...
Package Outline
0.05
1.2
0.05
0.04
0.2
0.55
3
1
2
0.05
0.05
0.05
0.2
0.15
0.4
0.05
0.4
Foot Print
0.4
0.4
0.4
Marking Layout (Example)
Manufacturer
BCR847BF
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.3
0.7
1.35
Pin 1
2010-06-28
13
Package TSLP-3-1
BC846...-BC850...
Package Outline
Top view
Bottom view
0.4+0.1
0.05
0.6
1)
0.035
0.05 MAX.
0.5
3
3
1
2
1
2
0.05
1)
0.35
Pin 1
marking
0.035
2x0.15
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
0.45
R0.1
0.2
0.225
0.2
0.17
0.225
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
4
Pin 1
marking
0.76
2010-06-28
14
BC846...-BC850...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-06-28
15
相关型号：
BC848C
NPN Silicon AF Transistors (For AF input stages and driver applications High current gain)
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