BC848 [INFINEON]
NPN Silicon AF Transistors; NPN硅晶体管自动对焦
| 型号： | BC848 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Transistors |
| 文件： | 总8页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC846...BC850
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types: BC856, BC857, BC858
BC859, BC860 (PNP)
3
2
1
VPS05161
Type
Marking
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
Pin Configuration
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
1 = B
B = 1
B = 1
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
BC849B
BC849C
BC850B
BC850C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
2Bs
2Cs
2Fs
2Gs
1
Nov-20-2002
BC846...BC850
Maximum Ratings
Parameter
Symbol
Unit
BC846
BC847
BC850
45
50
50
6
100
BC848
BC849
30
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
V
65
80
80
6
V
CEO
V
30
30
5
CBO
V
CES
V
EBO
I
mA
mA
C
I
200
200
CM
I
BM
Peak emitter current
I
200
EM
Total power dissipation, T = 71 °C
Junction temperature
P
330
150
mW
°C
S
tot
T
j
Storage temperature
T
-65 ... 150
stg
Thermal Resistance
Junction - soldering point
1)
R
240
K/W
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
V
V
Collector-emitter breakdown voltage
(BR)CEO
65
45
30
-
-
-
-
-
-
I = 10 mA, I = 0
BC846
BC847/850
BC848/849
C
B
V
Collector-base breakdown voltage
(BR)CBO
80
50
30
-
-
-
-
-
-
I = 10 µA, I = 0
BC846
BC847/850
BC848/849
C
E
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2
Nov-20-2002
BC846...BC850
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CES
I = 10 µA, V = 0
80
50
30
-
-
-
-
-
-
BC846
BC847/850
BC848/849
C
BE
Emitter-base breakdown voltage
V
I
(BR)EBO
I = 1 µA, I = 0
6
5
-
-
-
-
BC846/847
BC848-850
E
C
-
-
15
nA
µA
-
Collector cutoff current
= 40 V, I = 0
CBO
V
CB
E
I
-
-
5
Collector cutoff current
CBO
V
= 30 V, I = 0 , T = 150 °C
CB
E
A
DC current gain 1)
I = 10 µA, V = 5 V
h
FE
h -group A
-
-
-
140
250
480
-
-
-
C
CE
FE
h -group B
FE
h -group C
FE
DC current gain 1)
I = 2 mA, V = 5 V
h
FE
h -group A
110
200
420
180
290
520
220
450
800
C
CE
FE
h -group B
FE
h -group C
FE
Collector-emitter saturation voltage1)
V
mV
CEsat
I = 10 mA, I = 0.5 mA
-
-
90
200
250
600
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter saturation voltage 1)
V
BEsat
I = 10 mA, I = 0.5 mA
-
-
700
900
-
-
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter voltage 1)
V
BE(ON)
I = 2 mA, V = 5 V
580
-
660
-
700
770
C
CE
I = 10 mA, V = 5 V
C
CE
1) Pulse test: t ≤=300µs, D = 2%
3
Nov-20-2002
BC846...BC850
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
250
3
max.
AC Characteristics
Transition frequency
f
-
-
-
-
-
-
MHz
pF
T
I = 10 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
8
eb
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz
h
k
11e
h -gr.A
-
-
-
2.7
4.5
8.7
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
-4
Open-circuit reverse voltage transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
h
10
12e
h -gr.A
-
-
-
1.5
2
3
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
Short-circuit forward current transf.ratio
I = 2 mA, V = 5 V, f = 1 kHz
h
-
21e
h -gr.A
-
-
-
200
330
600
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
Open-circuit output admittance
h
22e
S
I = 2 mA, V = 5 V, f = 1 kHz
h -gr.A
-
-
-
18
30
60
-
-
-
C
CE
FE
h -gr.B
FE
h -gr.C
FE
F
V
-
1.2
4
dB
Noise figure
I = 200 µA, V = 5 V, R = 2 k ,
BC849
BC850
C
CE
S
f = 1 kHz, f = 200 Hz
Equivalent noise voltage
-
-
0.135 µV
n
I = 200 µA, V = 5 V, R = 2 k ,
BC850
C
CE
S
f = 10 ... 50 Hz
4
Nov-20-2002
BC846...BC850
Total power dissipation P = f(T )
Collector-base capacitance C = f (V
CBO
tot
S
CB
Emitter-base capacitance C = f (V
)
EB
EBO
EHP00361
12 BC 846...850
pF
360
mW
CCB0
CEB0
(
)
300
270
240
210
180
150
120
90
10
8
CEB
6
4
CCB
60
2
30
0
0
0
15 30 45 60 75 90 105 120
150
10 -1
5
10 0
V
101
°C
S
T
(
)
VCB0 VEB0
Permissible pulse load
Transition frequency f = f (I )
T
C
P
/ P
= f (t )
V
= 5V
totmax
totDC
p
CE
EHP00363
EHP00362
103
103
Ptotmax
PtotDC
MHz
5
t p
t p
T
f T
D
=
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
102
5
0.2
0.5
101
5
100
101
10-6 10-5 10-4 10-3 10-2
s
100
10-1
5
10 0
5
101
10 2
mA
Ι C
t p
5
Nov-20-2002
BC846...BC850
Collector-emitter saturation voltage
Collector cutoff current I
= f (T )
A
CBO
I = f (V
), h = 20
V
= 30V
C
CEsat
FE
CB
EHP00367
EHP00415
10 2
10 4
nA
mA
Ι CB0
Ι C
max
100 C
25 C
-50 C
10 3
5
101
5
typ
10 2
5
100
5
101
5
10 0
10 -1
0
0
50
100
150
˚C
TA
0.1
0.2
0.3
0.4
V
0.5
VCEsat
Base-emitter saturation voltage
DC current gain h = f (I )
FE
C
I = f (V
), h = 20
V
= 5V
C
BEsat
FE
CE
EHP00365
EHP00364
102
103
5
100 C
h FE
Ι C
mA
100
25
-50
C
C
C
25 C
-50 C
102
5
101
5
100
5
101
5
10-1
0
100
10-2
5 10 -1
5 10 0
5 101
10 2
mA
0.2
0.4
0.6
0.8
V
1.2
VBEsat
Ι C
6
Nov-20-2002
BC846...BC850
h parameter h = f (V ) normalized
h parameter h = f (I ) normalized
e
CE
e
C
I = 2mA
V
= 5V
C
CE
EHP00369
EHP00368
10 2
2.0
5
h e
he
Ι =
2 mA
C
h 21
e
1.5
1.0
0.5
h11e
h 11
V
CE = 5 V
e
10 1
5
h12e
h 12
h 22
e
e
10 0
5
h21e
h22e
10-1
0
0
10
20
V
30
10-1
5
10 0
10 1
mA
VCE
Ι C
Noise figure F = f (V
)
Noise figure F = f (f)
I = 0.2mA, V = 5V, R = 2k
CE
I = 0.2mA, R = 2k , f = 1kHz
C
S
C
CE
S
BC 846...850
EHP00370
BC 846...850
EHP00371
20
dB
20
dB
F
F
15
10
5
15
10
5
0
0
10-1
5
10 0
101
V
10 2
10-2
10 -1
100
101 kHz 10 2
VCE
f
7
Nov-20-2002
BC846...BC850
Noise figure F = f (I )
Noise figure F = f (I )
C
C
V
= 5V, f = 120Hz
V
= 5V, f = 1kHz
CE
CE
BC 846...850
EHP00373
BC 846...850
EHP00372
20
20
dB
dB
F
F
15
15
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
10
10
Ω
500
1 k
Ω
5
0
5
0
Ω
500
1 k
Ω
10-3
10 -2
10 -1
10 0
10 1
mA
10-3
10-2
10-1
S = 1 M
10-1
100
101
mA
Ι C
Ι C
Noise figure F = f (I )
C
V
= 5V, f = 10kHz
CE
BC 846...850
EHP00374
20
dB
F
15
R
Ω
100 k
Ω
10
10 k
Ω
500
Ω
5
0
1 k
Ω
10-3
10-2
100
101
mA
Ι C
8
Nov-20-2002
相关型号：
BC848-A
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
INFINEON
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