BC858BT [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-75, 3 PIN;型号: | BC858BT |
厂家: | Infineon |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, SC-75, 3 PIN |
文件: | 总17页 (文件大小:167K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC856...-BC860...
PNP Silicon AF Transistor
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Low noise between 30 hz and 15 kHz
• Complementary types:
BC846...-BC850... (NPN)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
1Pb-containing package may be available upon special request
2007-04-20
1
BC856...-BC860...
Type
Marking
3As
3Bs
3Bs
3Es
3Es
3Fs
3Fs
3F
Pin Configuration
Package
BC856A
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
1=B 2=E 3=C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT23
SOD323
SOT23
SOT323
SOT23
TSFP-3
TSLP-3-1
SC75
BC856B
BC856BW
BC857A
BC857AW
BC857B
BC857BF
BC857BL3
BC857BT
BC857BW
BC857C
3F
3Fs
3Gs
3Gs
3Js
3J
SOD323
SOT23
SOT323
SOT23
SC75
BC857CW
BC858A
BC858AT
BC858B
3Ks
3Ks
3K
SOT23
TSFP-3
TSLP-3-1
SC75
BC858BF
BC858BL3
BC858BT
BC858BW
BC858C
3K
3Ks
3Ls
3Ls
4As
4Bs
4Bs
4Cs
4Fs
4Fs
4Fs
4Gs
SOT323
SOT23
SOT323
SOT323
SOT23
TSFP-3
SOT23
SOT23
TSFP-3
SOT323
SOT323
BC858CW
BC859AW
BC859B
BC859BF
BC859C
BC860B
BC860BF
BC860BW
BC860CW
2007-04-20
2
BC856...-BC860...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC856...
V
V
V
CEO
65
45
30
BC857..., BC860...
BC858..., BC859...
Collector-base voltage
BC856...
CBO
80
50
30
BC857..., BC860...
BC858..., BC859...
5
Emitter-base voltage
Collector current
EBO
tot
100
200
mA
I
C
Peak collector current
Total power dissipation
I
CM
mW
P
T ≤ 71 °C, BC856-BC860
330
250
250
250
250
S
T ≤ 128 °C, BC857BF-BC860BF
S
T ≤ 135 °C, BC857BL3, BC860BL3
S
T ≤ 109 °C, BC857BT, BC858BT
S
T ≤ 124 °C, BC856W-BC860W
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
thJS
BC856-BC860
≤ 240
≤ 90
BC857BF-BC860BF
BC857BL3, BC858BL3
BC857BT, BC858BT
BC856W-BC860W
≤ 60
≤ 165
≤ 105
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
3
BC856...-BC860...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BC856...
65
45
30
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BC857..., BC860...
C
B
I = 10 mA, I = 0 , BC858..., BC859...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC856...
80
50
30
-
-
-
-
-
-
C
E
I = 10 µA, I = 0 , BC857..., BC860...
C
E
I = 10 µA, I = 0 , BC858..., BC859...
C
E
Emitter-base breakdown voltage
I = 1 µA, I = 0
5
-
-
(BR)EBO
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 45 V, I = 0
-
-
-
-
0.015
5
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
1)
DC current gain
I = 10 µA, V = 5 V, h -grp.A
h
FE
-
140
250
480
180
290
520
-
C
CE
FE
I = 10 µA, V = 5 V, h -grp.B
-
-
C
CE
FE
I = 10 µA, V = 5 V, h -grp.C
-
-
C
CE
FE
I = 2 mA, V = 5 V, h -grp.A
125
220
420
250
475
800
C
CE
FE
I = 2 mA, V = 5 V, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, h -grp.C
C
CE
FE
1)
Collector-emitter saturation voltage
I = 10 mA, I = 0.5 mA
V
V
V
mV
CEsat
BEsat
-
-
75
300
650
C
B
I = 100 mA, I = 5 mA
250
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 0.5 mA
-
-
700
850
-
-
C
B
I = 100 mA, I = 0.5 mA
C
B
1)
Base-emitter voltage
I = 2 mA, V = 5 V
BE(ON)
600
-
650
-
750
820
C
CE
I = 10 mA, V = 5 V
C
CE
1Pulse test: t < 300µs; D < 2%
2007-04-20
4
BC856...-BC860...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
h
h
h
h
kΩ
11e
-
-
-
2.7
4.5
8.7
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
10
12e
21e
22e
-
-
-
1.5
2
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
3
C
CE
FE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
-
-
-
-
200
330
600
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.A
µS
dB
-
-
-
18
30
60
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.B
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp.C
C
CE
FE
-
1
4
Noise figure
F
V
IC = 0.2 mA, VCE = 5 V, f = 1 kHz,
= 200 Hz, R = 2 kΩ, BC859, BC850
D
f
S
Equivalent noise voltage
-
-
0.11 µV
n
I = 200 mA, V = 5 V, R = 2 kΩ,
C
CE
S
f = 10...50 Hz, BC860
2007-04-20
5
BC856...-BC860...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 1 V
I = ƒ(V
), h = 20
CE
C
CEsat FE
EHP00382
EHP00380
103
10 2
mA
5
100 C
25 C
Ι C
h FE
100 C
25 C
-50 C
-50
C
102
5
101
5
100
5
101
5
100
10 -1
0
10-2
5 10 -1
5 10 0
5 101
10 2
0.1
0.2
0.3
0.4
V
0.5
mA
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 20
V
= 30 V
C
BEsat
FE
CBO
EHP00379
EHP00381
102
10 4
nA
mA
Ι C
ΙCB0
10 3
5
100
25
-50
C
C
C
101
5
max
10 2
5
typ
101
5
100
5
100
5
10 -1
10-1
0
0
50
100
150
C
0.2
0.4
0.6
0.8
V
1.2
TA
VBEsat
2007-04-20
6
BC856...-BC860...
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
CB
T
C
cb
V
= 5 V
Emitter-base capacitance C = ƒ(V )
eb EB
CE
EHP00378
103
12
pF
MHz
5
f T
10
9
8
7
6
5
4
3
2
1
0
102
5
CEB
CCB
101
10-1
5
10 0
5
101
10 2
V
0
4
8
12
16
22
mA
Ι C
V
(V )
CB EB
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC856-BC860
BC857BF-BC860BF
360
300
mW
mW
300
270
240
210
180
150
120
90
250
225
200
175
150
125
100
75
60
50
30
25
0
0
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
°C
T
T
S
S
2007-04-20
7
BC856...-BC860...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC857BL3, BC858BL3
BC857BT, BC858BT
300
mW
300
mW
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
50
50
25
25
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
BC856W-BC860W
P
/P
= ƒ(t )
totmax totDC p
BC856/W-BC860/W
EHP00377
103
300
mW
Ptotmax
t p
5
t p
T
PtotDC
D
=
250
225
200
175
150
125
100
75
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
50
25
100
0
10-6 10-5 10-4 10-3 10-2
s
100
°C
0
15 30 45 60 75 90 105 120
150
T
t p
S
2007-04-20
8
BC856...-BC860...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC857BF-BC860BF
p
BC857BF-BC860BF
10 2
K/W
10 3
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -1
10 2
10 1
10 0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC857BL3, BC858BL3
p
BC857BL3, BC858BL3
10 2
10 1
10 0
10 -1
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
s
t
t
p
p
2007-04-20
9
BC856...-BC860...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC857BT, BC858BT
p
BC857BT, BC858BT
10 3
K/W
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
10 1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
0.2
0.5
10 0
10 -1
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-04-20
10
Package SC75
BC856...-BC860...
Package Outline
±0.2
1.6
+0.1
0.2
±0.1
-0.05
0.1 MAX. 0.7
A
3
1
2
+0.1
0.2
-0.05
±0.05
0.15
0.5
0.5
M
M
0.10
0.2
A
Foot Print
0.4
0.4
0.5 0.5
Marking Layout (Example)
2005, December
Date code
BCR108T
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2 MAX.
0.45
Pin 1
1.75
0.9
2007-04-20
11
BC856...-BC860...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01
02
03
04
05
06
07
08
09
10
11
12
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.
.
2007-04-20
12
Package SOT23
BC856...-BC860...
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-20
13
Package SOT323
BC856...-BC860...
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2007-04-20
14
Package TSFP-3
BC856...-BC860...
Package Outline
±0.05
1.2
±0.05
±0.04
0.55
0.2
3
1
2
±0.05
±0.05
0.2
0.15
±0.05
0.4
±0.05
0.4
Foot Print
0.4
0.4
0.4
Marking Layout (Example)
Manufacturer
BCR847BF
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.3
0.7
1.35
Pin 1
2007-04-20
15
Package TSLP-3-1
BC856...-BC860...
Package Outline
Top view
Bottom view
0.4+0.1
±0.05
0.6
1)
±0.035
0.05 MAX.
0.5
3
3
1
2
1
2
±0.05
1)
0.35
Pin 1
marking
±0.035
2x0.15
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
0.45
R0.1
0.2
0.225
0.2
0.17
0.225
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR193L3
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.5
4
Pin 1
marking
0.76
2007-04-20
16
BC856...-BC860...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
17
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BC858BTR13
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon,
CENTRAL
BC858BTRL
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
NXP
BC858BTRLEADFREE
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3
CENTRAL
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