BCP48 [INFINEON]
PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain); PNP硅达林顿晶体管（一般自动对焦的应用高集电极电流高电流增益）
| 型号： | BCP48 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Darlington Transistors (For general AF applications High collector current High current gain) |
| 文件： | 总5页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Darlington Transistors
BCP 28
BCP 48
● For general AF applications
● High collector current
● High current gain
● Complementary types: BCP 29/49 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BCP 28
BCP 48
BCP 28
BCP 48
Q62702-C2134
Q62702-C2135
SOT-223
Maximum Ratings
Parameter
Symbol
Values
BCP 48
BCP 28
30
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
60
80
10
V
V
40
V
10
I
I
I
I
C
500
mA
Peak collector current
Base current
CM
800
100
200
1.5
B
Peak base current
BM
W
Total power dissipation, T
S
=124 ˚C2)
Ptot
Junction temperature
Tj
150
˚C
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 75
≤ 17
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BCP 28
BCP 48
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 1 mA, I = 0
B
BCP 28
BCP 48
30
60
–
–
–
–
Collector-base breakdown voltage1)
= 100 µA, I = 0
IC
B
40
80
–
–
–
–
BCP 28
BCP 48
Emitter-base breakdown voltage
= 10 µA, I = 0
10
–
–
IE
C
Collector-base cutoff current
ICB0
VCB = 30 V, I
VCB = 60 V, I
VCB = 30 V, I
VCB = 60 V, I
E
E
E
E
= 0
= 0
= 0, T
= 0, T
BCP 28
BCP 48
BCP 28
BCP 48
–
–
–
–
–
–
–
–
100
100
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
10
Emitter-base cutoff current
= 0
IEB0
–
–
100
nA
V
EB = 4 V, I
C
DC current gain1)
h
FE
–
4000
2000
10000 –
4000
20000 –
10000 –
4000
2000
–
–
–
–
–
–
–
–
–
–
IC
IC
IC
IC
= 100 µA, VCE = 1 V
= 10 mA, VCE = 5 V
= 100 mA, VCE = 5 V
= 500 mA, VCE = 5 V
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
BCP 28
BCP 48
–
–
–
Collector-emitter saturation voltage
= 100 mA, I = 0.1 mA
V
CEsat
BEsat
–
–
1.0
V
IC
B
Base-emitter saturation voltage
= 100 mA, I = 0.1 mA
V
–
–
1.5
IC
B
1)
Pulse test conditions: t ≤ 300 µs, D 2 %.
Semiconductor Group
2
BCP 28
BCP 48
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
200
8
–
–
MHz
pF
I
C
= 50 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
C
obo
V
Semiconductor Group
3
BCP 28
BCP 48
Total power dissipation Ptot = f (T
A
*; TS
)
Collector cutoff current ICB0 = f (T )
A
* Package mounted on epoxy
VCB = VCE max
Transition frequency f
T
= f (I
C
)
Permissible pulse load Ptot max/Ptot DC = f (t )
p
V
CE = 5 V
Semiconductor Group
4
BCP 28
BCP 48
DC current gain hFE = f (I
C
)
Collector-emitter saturation voltage
V
CE = 5 V
IC
= f (VCEsat)
hFE = 1000
Collector-base capacitance CCB0 = f (VCB0
)
Base-emitter saturation voltage
Emitter-base capacitance CEB0 = f (VEB0
)
IC
= f (VBEsat)
h
FE = 1000
Semiconductor Group
5
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