BCV27E6433 [INFINEON]
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BCV27E6433 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon |
| 文件： | 总8页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCV27, BCV47
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
2
1
3
• High current gain
• Complementary types: BCV26, BCV46 (PNP)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
FFs
Pin Configuration
Package
SOT23
SOT23
BCV27
BCV47
1=B
1=B
2=E
2=E
3=C
3=C
FGs
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BCV27
V
V
V
CEO
CBO
EBO
30
60
BCV47
Collector-base voltage
BCV27
40
BCV47
80
10
Emitter-base voltage
Collector current
500
800
100
200
360
mA
I
C
Peak collector current
Base current
I
CM
I
B
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 74 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
1Pb-containing package may be available upon special request
2007-04-20
1
BCV27, BCV47
Thermal Resistance
Parameter
Symbol
Value
≤ 210
Unit
1)
K/W
Junction - soldering point
R
thJS
1For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
2
BCV27, BCV47
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
-
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BCV27
30
60
-
-
-
-
C
B
I = 10 mA, I = 0 , BCV47
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0 , BCV27
40
80
-
-
-
-
C
E
I = 100 µA, I = 0 , BCV47
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
10
-
-
V
(BR)EBO
E
C
Collector-base cutoff current
I
µA
CBO
V
V
V
V
= 30 V, I = 0 , BCV27
-
-
-
-
-
-
-
-
0.1
0.1
10
CB
CB
CB
CB
E
= 60 V, I = 0 , BCV47
E
= 30 V, I = 0 , T = 150 °C, BCV27
E
A
= 60 V, I = 0 , T = 150 °C, BCV47
10
E
A
-
-
100 nA
Emitter-base cutoff current
I
EBO
V
= 4 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 100 µA, V = 1 V, BCV27
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
C
CE
I = 100 µA, V = 1 V, BCV47
C
CE
I = 10 mA, V = 5 V, BCV27
10000
4000
C
CE
I = 10 mA, V = 5 V, BCV47
C
CE
I = 100 mA, V = 5 V, BCV27
20000
10000
4000
C
CE
I = 100 mA, V = 5 V, BCV47
C
CE
I = 0.5 A, V = 5 V, BCV27
C
CE
I = 0.5 A, V = 5 V, BCV47
2000
C
CE
1)
Collector-emitter saturation voltage
I = 100 mA, I = 0.1 mA
V
V
-
-
1
V
CEsat
BEsat
C
B
1)
Base emitter saturation voltage
I = 100 mA, I = 0.1 mA
-
-
1.5
C
B
1Pulse test: t < 300µs; D < 2%
2007-04-20
3
BCV27, BCV47
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
-
170
3
-
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
2007-04-20
4
BCV27, BCV47
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 10
CE
C
CEsat
FE
BCV 27/47
EHP00307
BCV 27/47
EHP00305
106
103
mA
5
hFE
Ι C
150 ˚C
25 ˚C
-50 ˚C
125 ˚C
25 ˚C
102
5
105
5
-55 ˚C
104
5
101
5
100
103
0
0.5
1.0
1.5
10-1
100
101
102 mA 103
V
VCEsat
Ι C
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= V
CB CEmax
C
BEsat
FE
BCV 27/47
EHP00304
BCV 27/47
EHP00306
103
mA
104
nA
Ι C
Ι CBO
max
150 ˚C
25 ˚C
103
102
101
100
-50 ˚C
102
5
typ
101
5
100
0
1.0
2.0
3.0
V
0
50
100
150
˚C
TA
VBEsat
2007-04-20
5
BCV27, BCV47
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
CB
T
C
cb
V
= 5 V
Emitter-base capacitance C = ƒ(V )
eb EB
CE
BCV 27/47
EHP00303
103
19
pF
MHz
f T
15
13
11
9
102
5
CEB
7
5
CCB
3
101
1
100
101
102
mA
103
V
0
4
8
12
16
22
V
/V
Ι C
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
P
/P
= ƒ(t )
totmax totDC
p
BCV 27/47
EHP00301
103
400
Ptotmax
PtotDC
t p
mW
5
t p
T
D
=
T
300
250
200
150
100
50
102
5
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
0
10-6 10-5 10-4 10-3 10-2
s
100
0
15 30 45 60 75 90 105 120
150
°C
T
S
t p
2007-04-20
6
Package SOT23
BCV27, BCV47
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-20
7
BCV27, BCV47
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
8
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