BCX12 [INFINEON]
NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage); NPN硅AF开关晶体管（对于一般AF应用高击穿电压）
| 型号： | BCX12 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN Silicon AF Switching Transistor
BCX 12
● For general AF applications
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary type: BCX 13 (PNP)
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BCX 12
BCX 12
Q62702-C25
C
B
E
TO-92
Maximum Ratings
Parameter
Symbol
Values
125
125
5
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
I
I
I
I
C
800
1
mA
A
Peak collector current
Base current
CM
B
100
200
625
150
mA
Peak base current
Total power dissipation, T
Junction temperature
BM
C
= 66 ˚C
Ptot
mW
˚C
Tj
Storage temperature range
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case2)
R
th JA
th JC
≤ 200
≤ 135
K/W
R
1)
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
5.91
Semiconductor Group
1
BCX 12
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V
V
V
(BR)CE0
(BR)CB0
(BR)EBS
125
125
5
–
–
–
–
–
–
V
I
C
= 10 mA, I
Collector-base breakdown voltage
= 100 µA, I = 0
Emitter-base breakdown voltage
= 10 µA, I = 0
Collector-base cutoff current
B
= 0
IC
B
IE
C
I
CB0
EB0
V
V
CB = 100 V, I
CB = 100 V, I
E
= 0
= 0, T
–
–
–
–
100
10
nA
µA
E
A
= 150 ˚C
Emitter cutoff current
I
–
–
100
nA
VEB = 4 V
DC current gain1)
h
FE
–
25
50
63
40
–
–
–
–
–
–
–
–
IC
IC
IC
IC
= 1 mA,
VCE = 1 V
= 10 mA, VCE = 1 V
= 100 mA, VCE = 1 V
= 200 mA, VCE = 1 V
Collector-emitter saturation voltage1)
= 500 mA, I = 50 mA
V
V
CEsat
BEsat
–
–
1.0
V
IC
B
Base-emitter saturation voltage1)
= 500 mA, I = 50 mA
–
–
1.6
IC
B
AC characteristics
Transition frequency
f
T
–
–
100
10
–
–
MHz
pF
IC
= 20 mA, VCE = 5 V, f = 20 MHz
Output capacitance
C
obo
VCB = 10 V, f= 1 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BCX 12
Total power dissipation Ptot = f (T
A
; TC)
Permissible pulse load RthJA = f (t )
p
Collector current I
C
= f (VBE
)
Collector cutoff current ICB0 = f (T )
A
V
C
= 1 V
VCB = VCBmax
Semiconductor Group
3
BCX 12
DC current gain hFE = f (I
C)
Transition frequency f
T
= f (I
C)
VCE = 1 V
f= 20 MHz, VCE = 5 V, T
A
= 25 ˚C
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC
= f (VCEsat), hFE = 10
IC = f (VBEsat), hFE = 10
Semiconductor Group
4
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