BCX51-16 [INFINEON]
PNP Silicon AF Transistors; PNP硅晶体管自动对焦
| 型号： | BCX51-16 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors |
| 文件： | 总5页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BCX 51 ... BCX 53
Features
● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BCX 54 … BCX 56 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCX 51
AA
AC
AD
AE
AG
AM
AH
AK
AL
Q62702-C1847
Q62702-C1831
Q62702-C1857
Q62702-C1743
Q62702-C1744
Q62702-C1900
Q62702-C905
Q62702-C1753
Q62702-C1502
B
C
E
SOT-89
BCX 51-10
BCX 51-16
BCX 52
BCX 52-10
BCX 52-16
BCX 53
BCX 53-10
BCX 53-16
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
1
04.96
BCX 51 ... BCX 53
Maximum Ratings
Parameter
Symbol
Values
Unit
BCX 51 BCX 52
BCX 53
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
45
5
60
60
5
80
100
5
V
I
I
I
I
C
1
A
Peak collector current
Base current
CM
1.5
100
200
1
B
mA
Peak base current
BM
Total power dissipation, T
S
= 130 ˚C Ptot
W
Junction temperature
T
T
j
150
˚C
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient1)
R
th JA
th JS
≤ 75
≤ 20
K/W
Junction - soldering point
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
1)
Semiconductor Group
2
BCX 51 ... BCX 53
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BCX 51
BCX 52
BCX 53
45
60
80
–
–
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BCX 51
BCX 52
BCX 53
45
60
100
–
–
–
–
–
–
Emitter-base breakdown voltage
= 10 µA
5
–
–
IE
Collector cutoff current
I
CB0
EB0
VCB = 30 V
–
–
–
–
100
20
nA
µA
V
CB = 30 V, T
A
= 150 ˚C
Emitter cutoff current
I
–
–
20
nA
–
VEB = 4 V
DC current gain1)
hFE
25
–
–
IC
= 5 mA, VCE = 2 V
IC
= 150 mA, VCE = 2 V
40
63
100
25
–
250
160
250
–
BCX 51, BCX 52, BCX 53
BCX 51-10, BCX 52-10, BCX 53-10
BCX 51-16, BCX 52-16, BCX 53-16
= 500 mA, VCE = 2 V
100
160
–
IC
Collector-emitter saturation voltage1)
= 500 mA, I = 50 mA
V
CEsat
BE
–
–
0.5
V
IC
B
Base-emitter voltage1)
= 500 mA, VCE = 2 V
V
–
–
1
IC
AC characteristics
Transition frequency
fT
–
125
–
MHz
IC
= 50 mA, VCE = 10 V, f = 20 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
3
BCX 51 ... BCX 53
Total power dissipation Ptot = f (T
A
*; TS
)
Collector current I
C
= f (VBE
)
* Package mounted on epoxy
VCE = 2 V
Permissible pulse load Ptot max/Ptot DC = f (t
p)
Transition frequency f
T
= f (I )
C
V
CE = 10 V
Semiconductor Group
4
BCX 51 ... BCX 53
DC current gain hFE = f (I
C)
Collector-emitter saturation voltage
V
CE = 2 V
IC
= f (VCEsat)
hFE = 10
Collector cutoff current ICB0 = f (T
A
)
Base-emitter saturation voltage
V
CB = 30 V
IC
= f (VBEsat)
h
FE = 10
Semiconductor Group
5
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