BCX55E6327 [INFINEON]
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BCX55E6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon 开关 晶体管 |
| 文件： | 总8页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX54 ...- BCX56...
NPN Silicon AF Transistors
1
• For AF driver and output stages
• High collector current
2
3
2
• Low collctor-emitter saturation voltage
• Complementary types: BCX51...BCX53 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BCX54-16
BCX55
BCX55-16
BCX56
BCX56-10
BCX56-16
Marking
BD
BE
BM
BH
Pin Configuration
Package
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
1=B
1=B
1=B
1=B
1=B
1=B
2=C
2=C
2=C
2=C
2=C
2=C
3=E
3=E
3=E
3=E
3=E
3=E
BK
BL
2011-09-19
1
BCX54 ...- BCX56...
Maximum Ratings
Parameter
Symbol
Value
Unit
-
Collector-emitter voltage
BCX54
BCX55
V
V
V
CEO
CBO
EBO
45
60
80
BCX56
V
Collector-base voltage
BCX54
BCX55
45
60
100
BCX56
5
1
Emitter-base voltage
Collector current
A
I
C
1.5
100
200
2
Peak collector current, t ≤ 10 ms
Base current
Peak base current
Total power dissipation-
I
I
B
I
BM
P
p
CM
mA
W
tot
T ≤ 120°C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 15
Unit
K/W
1)
R
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-09-19
2
BCX54 ...- BCX56...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BCX54
45
60
80
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BCX55
C
B
I = 10 mA, I = 0 , BCX56
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0 , BCX54
45
60
100
-
-
-
-
-
-
C
E
I = 100 µA, I = 0 , BCX55
C
E
I = 100 µA, I = 0 , BCX56
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 30 V, I = 0
-
-
-
-
0.1
20
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
1)
DC current gain
I = 5 mA, V = 2 V
h
FE
25
40
63
100
25
-
-
-
C
CE
I = 150 mA, V = 2 V, BCX55/BCX56
250
160
250
-
C
CE
I = 150 mA, V = 2 V, BCX55-10/BCX56-10
100
160
-
C
CE
I = 150 mA, V = 2 V, BCX54-16...BCX56-16
C
CE
I = 500 mA, V = 2 V
C
CE
1)
Collector-emitter saturation voltage
I = 500 mA, I = 50 mA
V
-
-
0.5
V
CEsat
C
B
Base-emitter voltage-
I = 500 mA, V = 2 V
V
BE(ON)
-
-
1
C
CE
AC Characteristics
Transition frequency
-
100
-
MHz
f
T
I = 50 mA, V = 10 V, f = 20 MHz
C
CE
1
Pulse test: t < 300µs; D < 2%
2011-09-19
3
BCX54 ...- BCX56...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 2 V
I = ƒ(V
), h = 10
CE
C
CEsat FE
10 3
BCX 54...56
EHP00449
104
mA
Ι C
103
5
100°C
˚C
˚C
˚C
100
25
-50
10 2
102
5
25°C
-50°C
101
5
10 1
100
10 -1
10 0
10 1
10 2
10 3
0
0.2
0.4
0.6
V
0.8
VCE sat
Base-emitter saturation voltage
I = ƒ(V ), h = 10
Collector current I = ƒ(V )
C BE
V = 2V
C
BEsat
FE
CE
BCX 54...56
EHP00448
BCX 54...56
EHP00450
104
mA
104
mA
Ι C
Ι C
103
5
103
5
˚C
˚C
100
25
˚C
˚C
100
25
-50 ˚C
-50 ˚C
102
5
102
5
101
5
101
5
100
100
0
0.2
0.4
0.6
0.8
1.0
1.2
V
0
0.2
0.4
0.6
0.8
1.0
1.2
V
VBE sat
VBE
2011-09-19
4
BCX54 ...- BCX56...
Collector cutoff current I
= ƒ(T )
Transition frequency f = ƒ(I )
T C
CBO
A
V
= 30 V
V
= parameter in V, f = 2 GHz
CBO
CE
BCX 54...56
EHP00447
BCX 54...56
EHP00445
10 4
103
nA
MHz
5
max
ΙCB0
f T
10 3
5
10 2
5
102
typ
10 1
5
5
100
5
10 -1
101
100
5
10 1
5
102
10 3
0
50
100
150
˚C
TA
mA
Ι C
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
thJS p
tot
S
10 2
2.4
W
10 1
10 0
10 -1
1.6
1.2
0.8
0.4
0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
°C
s
0
15 30 45 60 75 90 105 120
150
T
t
p
S
2011-09-19
5
BCX54 ...- BCX56...
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC
p
10 3
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
0.2
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
t
p
2011-09-19
6
Package SOT89
BCX54 ...- BCX56...
Package Outline
0.1
4.5
B
0.1
1.5
45˚
0.25
0.2 MAX.1)
0.05
0.2
1.6
0.15
1
2
3
1.5
0.1
0.35
+0.2
-0.1
0.45
M
0.15
B
x3
3
0.2
B
1) Ejector pin markings possible
Foot Print
2.0
0.8
0.8
0.7
Marking Layout (Example)
BAW78D
Type code
Pin 1
2005, June
Date code (YM)
Manufacturer
Standard Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.2
8
Pin 1
1.6
4.3
2011-09-19
7
BCX54 ...- BCX56...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-09-19
8
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