BCX71HE6327HTSA1 [INFINEON]
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,;
| 型号： | BCX71HE6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, |
| 文件： | 总11页 (文件大小：556K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW61..., BCX71...
PNP Silicon AF Transistors
• For AF input stages and driver applications
• High current gain
2
1
3
• Low collector-emitter saturation voltage
• Low noise between 30 Hz and 15 kHz
• Complementary types: BCW60, BCX70 (NPN)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
BAs
BBs
BCs
BDs
BGs
BHs
BJs
Pin Configuration
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
BCW61A
BCW61B
BCW61C
BCW61D
BCX71G
BCX71H
BCX71J
BCX71K
1=B
1=B
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
3=C
3=C
BKs
2011-07-29
1
BCW61..., BCX71...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BCW61...
BCX71...
V
V
V
CEO
CBO
EBO
32
45
Collector-base voltage
BCW61...
BCX71...
32
45
5
100
200
200
330
Emitter-base voltage
Collector current
mA
I
C
Peak collector current, t ≤ 10 ms
I
CM
I
BM
p
Peak base current
Total power dissipation-
mW
P
tot
T ≤ 71 °C
S
150
-
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 240
Unit
K/W
1)
R
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-07-29
2
BCW61..., BCX71...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BCW61...
32
45
-
-
-
-
C
B
I = 10 mA, I = 0 , BCX71...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BCW61...
32
45
-
-
-
-
C
E
I = 10 µA, I = 0 , BCX71...
C
E
Emitter-base breakdown voltage
I = 1 µA, I = 0
5
-
-
E
C
Collector-base cutoff current
I
µA
CBO
V
V
V
V
= 32 V, I = 0
-
-
-
-
-
-
-
-
0.02
0.02
20
CB
CB
CB
CB
E
= 45 V, I = 0
E
= 32 V, I = 0 , T = 150 °C, BCW61...
E
A
= 45 V, I = 0 , T = 150 °C, BCX71...
20
E
A
-
-
20
nA
-
Emitter-base cutoff current
I
EBO
V
= 4 V, I = 0
EB
C
1)
DC current gain
h
FE
I = 10 µA, V = 5 V, h -grp. A/G
20
30
40
100
120
180
250
380
60
140
200
300
460
170
250
350
500
-
-
-
-
C
CE
FE
I = 10 µA, V = 5 V, h -grp. B/H
C
CE
FE
I = 10 µA, V = 5 V, h -grp. C/J
C
CE
FE
I = 10 µA, V = 5 V, h -grp. D/K
-
220
310
460
630
-
C
CE
FE
I = 2 mA, V = 5 V, h -grp. A/G
C
CE
FE
I = 2 mA, V = 5 V, h -grp. B/H
C
CE
FE
I = 2 mA, V = 5 V, h -grp. C/J
C
CE
FE
I = 2 mA, V = 5 V, h -grp. D/K
C
CE
FE
I = 50 mA, V = 1 V, h -grp. A/G
C
CE
FE
I = 50 mA, V = 1 V, h -grp. B/H
80
-
-
C
CE
FE
I = 50 mA, V = 1 V, h -grp. C/J
100
110
-
-
-
-
C
CE
FE
I = 50 mA, V = 1 V, h -grp. D/K
C
CE
FE
2011-07-29
3
BCW61..., BCX71...
DC Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
Collector-emitter saturation voltage
1)
V
V
V
V
CEsat
I = 10 mA, I = 0.25 mA
-
-
0.12
0.2
0.25
0.55
C
B
I = 50 mA, I = 1.25 mA
C
B
1)
Base emitter saturation voltage
I = 10 mA, I = 0.25 mA
BEsat
-
-
0.7
0.83
0.85
1.05
C
B
I = 50 mA, I = 1.25 mA
C
B
1)
Base-emitter voltage
I = 10 µA, V = 5 V
BE(ON)
-
0.55
-
0.52
0.65
0.78
-
0.75
-
C
CE
I = 2 mA, V = 5 V
C
CE
I = 50 mA, V = 1 V
C
CE
1
Pulse test: t < 300µs; D < 2%
2011-07-29
4
BCW61..., BCX71...
AC Characteristics
-
-
-
250
1.5
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
Short-circuit input impedance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. A/B
h
h
h
h
kΩ
11e
-
-
-
-
2.7
3.6
4.5
7.5
-
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. B/H
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. C/J
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. D/K
C
CE
FE
-4
Open-circuit reverse voltage transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. A/B
10
12e
21e
22e
-
-
-
-
1.5
2
2
-
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. B/H
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. C/J
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. D/K
3
C
CE
FE
Short-circuit forward current transf. ratio
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. A/B
-
-
-
-
-
200
260
330
520
-
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. B/H
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. C/J
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. D/K
C
CE
FE
Open-circuit output admittance
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. A/B
µS
dB
-
-
-
-
18
24
30
50
-
-
-
-
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. B/H
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. C/J
C
CE
FE
I = 2 mA, V = 5 V, f = 1 kHz, h -grp. D/K
C
CE
FE
-
2
-
Noise figure
F
I = 200 µA, V = 5 V, f = 1 kHz,
C
CE
∆ f = 200 Hz, R = 2 kΩ, h -grp. A/K
S
FE
2011-07-29
5
BCW61..., BCX71...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 5 V
I = ƒ(V
), h = 40
CE
C
CEsat FE
BCW 61/BCX 71
EHP00351
BCW 61/BCX 71
EHP00349
103
102
mA
5
100 ˚C
25 ˚C
hFE
Ι C
100 ˚C
25 ˚C
-50 ˚C
-50 ˚C
102
5
101
5
101
5
100
5
100
10-1
10-2
10-1
100
101 mA 102
0
0.1
0.2
0.3
0.4
V
0.5
Ι C
VCEsat
Base-emitter saturation voltage
I = ƒ(V ), h = 40
Collector current I = ƒ(V )
C
BE
V = 5 V
C
BEsat
FE
CE
BCW 61/BCX 71
EHP00348
BCW 61/BCX 71
EHP00350
102
mA
102
Ι C
Ι C
mA
100 ˚C
25 ˚C
-50 ˚C
101
5
101
5
100
5
100
5
100 ˚C
25 ˚C
-50 ˚C
10-1
5
10-1
10-2
0
0.2
0.4
0.6
0.8
V
1.2
0
0.5
V
1.0
VBE sat
VBE
2011-07-29
6
BCW61..., BCX71...
Collector cutoff current I
= ƒ(T )
Transition frequency f = ƒ(I )
T C
CBO
A
V
= V
V
= parameter in V, f = 2 GHz
CB
CEmax
CE
BCW 61/BCX 71
EHP00347
103
BCW 61/BCX 71
EHP00352
104
nA
MHz
5
f T
Ι CBO
103
max
102
101
102
5
typ
100
101
10-1
100
5 101
5 102
mA
Ι C
103
0
50
100
150
C
TA
Collector-base capacitance C = ƒ(V )
Total power dissipation P = ƒ(T )
tot S
cb
CB
Emitter-base capacitance C = ƒ(V )
eb
EB
12
pF
360
mW
10
9
8
7
6
5
4
3
2
1
0
300
270
240
210
180
150
120
90
CEB
60
30
CCB
0
V
0
4
8
12
16
22
(V
0
15 30 45 60 75 90 105 120
150
°C
T
S
V
)
CB EB
2011-07-29
7
BCW61..., BCX71...
Permissible Pulse Load
h parameter h = ƒ(I ) normalized
e C
P
/P
= ƒ(t )
V
= 5V
totmax totDC
p
CE
BCW 61/BCX 71
EHP00345
103
5
BCW 61/BCX 71
EHP00353
102
Ptotmax
PtotDC
t p
t p
T
he
D
=
T
VCE = 5 V
h11e
102
5
101
5
D
0
=
0.005
0.01
0.02
0.05
0.1
h12e
0.2
0.5
100
5
101
5
h21e
h22e
10-1
100
10-1
5
100
mA
Ι C
101
10-6 10-5 10-4 10-3 10-2
s
100
t p
h parameter h = ƒ(V ) normalized
Noise figure F = ƒ(V )
CE
e
CE
I = 2mA
I = 0.2mA, R = 2kΩ , f = 1kHz
C
C
S
BCW 61/BCX 71
EHP00354
BCW 61/BCX 71
EHP00355
2.0
1.5
1.0
0.5
0
20
dB
he
F
Ι C
= 2 mA
h 11
15
10
h 12
h 22
5
0
10-1
100
101
V
102
0
10
20
V
30
VCE
VCE
2011-07-29
8
BCW61..., BCX71...
Noise figure F = ƒ(f)
Noise figure F = ƒ(I )
C
V
= 5V, Z = Z
V = 5V, f = 120Hz
CE
S
Sopt
CE
BCW 61/BCX 71
EHP00356
BCW 61/BCX 71
EHP00357
20
20
F
dB
15
dB
F
RS = 1 M
Ω
100 k
Ω
10 kΩ
15
10
10
500
Ω
5
0
5
0
1 k
Ω
10-3
10-2
10-1
100 mA 101
10-2
10-1
100
101 kHz 102
Ι C
f
Noise figure F = ƒ(I )
Noise figure F = ƒ(I )
C
C
V
= 5V, f = 1kHz
V
= 5V, f = 10kHz
CE
CE
BCW 61/BCX 71
EHP00358
BCW 61/BCX 71
EHP00359
20
20
dB
15
dB
15
F
F
Ω
RS = 1 M
RS = 1 M 100 k 10 k
Ω Ω Ω
100 k
Ω
10
10
10 k
Ω
1k
Ω
500
Ω
5
0
5
1 k
Ω
500
Ω
0
10-3
10-2
10-1
100 mA 101
10-3
10-2
10-1
100 mA 101
Ι C
Ι C
2011-07-29
9
Package SOT23
BCW61..., BCX71...
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-07-29
10
BCW61..., BCX71...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-07-29
11
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