BCX78-IX [INFINEON]
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage); PNP硅晶体管自动对焦（高电流增益低集电极 - 发射极饱和电压）
| 型号： | BCX78-IX |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) |
| 文件： | 总7页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon AF Transistors
BCX 78
BCX 79
● High current gain
● Low collector-emitter saturation voltage
● Low noise at 1 kHz
● Low noise at low frequencies
● Complementary types: BCX 58, BCX 59 (NPN)
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BCX 78
–
Q62702-C717
Q62702-C626
Q62702-C627
Q62702-C628
Q62702-C629
Q62702-C718
Q62702-C630
Q62702-C631
Q62702-C632
Q62702-C633
C
B
E
TO-92
BCX 78-VII
BCX 78-VIII
BCX 78-IX
BCX 78-X
BCX 79
BCX 79-VII
BCX 79-VIII
BCX 79-IX
BCX 79-X
1)
For detailed information see chapter Package Outlines.
5.91
Semiconductor Group
1
BCX 78
BCX 79
Maximum Ratings
Parameter
Symbol
Values
BCX 79
Unit
BCX 78
32
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
45
45
V
32
5
I
I
I
C
100
200
mA
Peak collector current
Peak base current
CM
BM
200
Total power dissipation, T
C
= 70 ˚C Ptot
500
mW
˚C
Junction temperature
T
T
j
150
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case1)
R
th JA
th JC
≤ 250
≤ 160
K/W
R
1)
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2
BCX 78
BCX 79
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
IC
= 2 mA
BCX 78
BCX 79
32
45
–
–
–
–
Collector-base breakdown voltage
IC
= 10 µA
BCX 78
BCX 79
32
45
–
–
–
–
Emitter-base breakdown voltage
= 1 µA
5
–
–
IE
Collector cutoff current
ICB0
V
V
V
V
CB = 32 V
CB = 45 V
CB = 32 V, T
CB = 45 V, T
BCX 78
BCX 79
BCX 78
BCX 79
–
–
–
–
–
–
–
–
20
20
10
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
Collector cutoff current
I
CE0
EB0
µA
V
V
CB = 32 V, VBE = 0.2 V,T
CB = 45 V, VBE = 0.2 V,T
A
A
= 100 ˚C
= 100 ˚C
–
–
–
–
20
20
Emitter cutoff current
I
–
–
20
nA
–
VEB = 4 V
h
FE
DC current gain
IC
IC
IC
= 10 µA, VCE = 5 V
20
30
40
100
140
200
270
340
–
–
–
–
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
= 2 mA, VCE = 5 V
120
180
250
380
170
250
350
500
220
310
460
630
BCX 78 VII, BCX 79 VII
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
= 100 mA, VCE = 1 V1)
BCX 78 VII, BCX 79 VII
40
45
60
60
–
–
–
–
–
–
–
–
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
3
BCX 78
BCX 79
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter saturation voltage1)
VCEsat
VBEsat
VBE(on)
–
–
–
–
0.6
1.0
V
I
C
= 100 mA, I
Base-emitter saturation voltage1)
= 100 mA, I = 2.5 mA
Base-emitter voltage
B
= 2.5 mA
IC
B
IC
IC
IC
= 10 µA, VCE = 5 V
= 2 mA, VCE = 5 V
= 100 mA, VCE = 1 V 1)
–
0.55
–
0.52
0.65
0.93
–
0.75
–
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
4
BCX 78
BCX 79
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics
Transition frequency
f
T
–
–
–
250
3
–
–
–
MHz
pF
I
C
= 20 mA, VCE = 5 V, f = 100 MHz
Output capacitance
CB = 10 V, f = 1 MHz
Input capacitance
EB = 0.5 V, f = 1 MHz
Short-circuit input impedance
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
C
obo
ibo
V
C
10
V
h
h
h
h
11e
12e
21e
22e
kΩ
10– 4
–
IC
–
–
–
–
2.7
3.6
4.5
7.5
–
–
–
–
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
Open-circuit reverse voltage transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
IC
–
–
–
–
1.5
2
2
–
–
–
–
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
3
Short-circuit forward current transfer ratio
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
IC
–
–
–
–
200
260
330
520
–
–
–
–
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
Open-circuit output admittance
= 2 mA, VCE = 5 V, f = 1 kHz
BCX 78 VII, BCX 79 VII
µS
dB
IC
–
–
–
–
18
24
30
50
–
–
–
–
BCX 78 VIII, BCX 79 VIII
BCX 78 IX, BCX 79 IX
BCX 78 X, BCX 79 X
Noise figure
= 0.2 mA, VCE = 5 V, R = 2 kΩ
F
–
2
–
IC
S
f= 1 kHz, ∆f = 200 Hz
Semiconductor Group
5
BCX 78
BCX 79
Total power dissipation Ptot = f (T
A
; TC)
Collector current I = f (VBE)
C
VCE = 5 V
Permissible pulse load RthJA = f (t
p)
Collector cutoff current ICB0 = f (T
A
)
for max. permissible reverse voltage
Semiconductor Group
6
BCX 78
BCX 79
DC current gain hFE = f (I
C
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V (common emitter configuration)
VCE = 5 V
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC
= f (VCEsat
)
IC
= f (VBEsat)
h
FE = 20
h
FE = 20
Semiconductor Group
7
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