BD442 [INFINEON]
PNP SILICON EPIBASE TRANSISTORS; PNP硅晶体管EPIBASE
| 型号： | BD442 |
| 厂家： | 
Infineon |
| 描述： | PNP SILICON EPIBASE TRANSISTORS |
| 文件： | 总5页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
BD442LEADFREE
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
CENTRAL
BD442S
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin,
FAIRCHILD
BD442STU
PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL
FAIRCHILD
BD450M2EFJ-C
BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µA的低待机电流稳压器，是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能，相应产品在向CTL端子施加HIGH电压时元件输出ON，施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD450U2EFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.
ROHM
BD450M2FP3-C
BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µA的低待机电流稳压器，是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能，相应产品在向CTL端子施加HIGH电压时元件输出ON，施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。
ROHM
BD450M2WEFJ-C
BD4xxM2-C系列是45V耐压、输出电压精度±2％、输出电流200mA、消耗电流40µA的低待机电流稳压器，是输出电压为3.3V或5.0V的固定型产品。本IC适合用来降低蓄电池直连系统的消耗电流。可选择有无输出关断功能，相应产品在向CTL端子施加HIGH电压时元件输出ON，施加LOW电压时元件输出OFF。输出相位补偿电容器可使用陶瓷电容器。本IC内置防止因输出短路等发生IC破坏的过电流保护、以及防止因过负荷状态等使IC发生热破坏的过热保护电路。We recommend BD450U2WEFJ-C for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.
ROHM
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