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元器件品牌
BF1009SR-E6433
[INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
元器件型号：
BF1009SR-E6433
生产厂家：
INFINEON TECHNOLOGIES AG
描述和应用：
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
PDF文件：
总8页 (文件大小：82K)
下载文档：
下载PDF数据表文档文件
型号参数：BF1009SR-E6433参数
查看货源
BF1009SW
TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R
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156
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42
ETC
BF100V
SSR CONTROL MODULE 0-10V
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156
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12
ETC
BF10-10
COPPER ALLOY, TIN FINISH, FORK TERMINAL
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156
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0
3M
BF1012
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
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218
INFINEON
BF1012S
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
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284
INFINEON
BF1012W
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
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56
INFINEON
BF10-6
COPPER ALLOY, TIN FINISH, FORK TERMINAL
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156
-
0
3M
BF10-8
COPPER ALLOY, TIN FINISH, FORK TERMINAL
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156
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0
3M
BF1100
Dual-gate MOS-FETs
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on line
156
-
74
PHILIPS
BF1100
Dual-gate MOS-FETs
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on line
156
-
52
PHILIPS
BF1100/R
Dual-Gate MOS-FETs
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on line
156
-
8
ETC
BF1100/WR
Dual-Gate MOS-FETs
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156
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24
ETC
BF1100_15
Dual-gate MOS-FETs
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156
-
0
JMNIC
BF1100_2015
Dual-gate MOS-FETs
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156
-
0
JMNIC
BF1100R
Dual-gate MOS-FETs
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156
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23
PHILIPS
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