BF423 [INFINEON]
PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage); PNP硅晶体管（高击穿电压低集电极 - 发射极饱和电压）
| 型号： | BF423 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage) |
| 文件： | 总4页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Transistors
With High Reverse Voltage
BF 421
BF 423
● High breakdown voltage
● Low collector-emitter saturation voltage
● Low capacitance
● Complementary types: BF 420, BF 422 (NPN)
2
3
1
Package1)
Type
Marking
Ordering Code
Pin Configuration
1
2
3
BF 421
BF 423
–
Q62702-F532
Q62702-F496
E
C
B
TO-92
Maximum Ratings
Parameter
Symbol Values
Unit
BF 421
BF 423
250
–
Collector-emitter voltage
Collector-emitter voltage
V
V
CE0
CER
–
V
300
RBE = 2.7 k
Collector-base voltage
Emitter-base voltage
Collector current
V
V
CB0
EB0
300
250
5
IC
50
mA
Peak base current
I
BM
100
830
150
Total power dissipation, T
C
= 88 ˚C Ptot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient
Junction - case2)
R
th JA
th JC
≤ 150
≤ 75
K/W
R
1)
For detailed information see chapter Package Outlines.
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
2)
5.91
Semiconductor Group
1
BF 421
BF 423
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V(BR)CER
V(BR)CB0
250
300
–
–
–
–
V
I
C
= 1 mA
Collector-emitter breakdown voltage
= 10 µA, RBE = 2.7 k BF 421
Collector-base breakdown voltage
BF 423
IC
IC
= 10 µA
BF 421
BF 423
300
250
–
–
–
–
Emitter-base breakdown voltage, I
E
= 10 µA
V
(BR)EB0
5
–
–
–
–
Collector cutoff current
ICB0
ICER
IEB0
10
nA
VCB = 200 V
Collector cutoff current
–
–
–
–
10
10
µA
Ω
VCE = 200 V, RBE = 2.7 k , T =150 ˚C
A
Emitter cutoff current, VEB = 5 V
DC current gain
hFE
–
I
C
= 100 µA, VCE = 20 V
= 25 mA, VCE = 20 V
15
50
–
–
–
–
IC
Collector-emitter saturation voltage1)
= 25 mA, T =150 ˚C
VCEsatRF
–
–
20
V
IC
j
AC characteristics
Transition frequency
f
T
–
–
100
0.8
–
–
MHz
pF
IC
= 20 mA, VCE = 10 V, f = 20 MHz
Output capacitance
C
obo
VCB = 30 V, f = 1 MHz
1)
Pulse test: t ≤ 300 µs, D ≤ 2 %.
Semiconductor Group
2
BF 421
BF 423
Total power dissipation Ptot = f (T
A
; TC)
Collector current I
C
= f (VBE)
VCE = 20 V, T
A
= 25 ˚C
Permissible pulse load RthJA = f (t
p)
Collector cutoff current ICB0 = f (T )
A
V
CB = 200 V
Semiconductor Group
3
BF 421
BF 423
DC current gain hFE = f (I
C
)
Transition frequency f
T
= f (I )
C
V
CE = 20 V, T = 25 ˚C
A
VCE = 10 V, f = 20 MHz
Output capacitance Cobo = f (VCB
= 0, f = 1 MHz
)
IC
Semiconductor Group
4
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