BF5030R-E6327 [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | BF5030R-E6327 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总13页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF5030...
Silicon N-Channel MOSFET Tetrode
• Designed for input stages of UHF- and
3
VHF-tuners with AGC function
2
1
4
• Supporting 5 V operations and
power saving 3 V operations
• Integrated ESD gate protection diodes
• Very low noise figure
• High gain, high forward transadmittance
• Very good cross modulation at gain reduction
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Drain
HF Output
+ DC
G2
G1
AGC
HF
Input
RG1
GND
VGG
EHA07461
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
SOT143
SOT143R 1=D
SOT343 1=D
Pin Configuration
Marking
KXs
KXs
BF5030
BF5030R
BF5030W
1=S
2=D
2=S
2=S
3=G2 4=G1
3=G1 4=G2
3=G1 4=G2
-
-
-
-
-
-
KXs
2009-05-05
1
BF5030...
Maximum Ratings
Parameter
Drain-source voltage
Symbol
V
DS
Value
8
Unit
V
25
mA
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS ≤ 94 °C, BF5030W
TS ≤ 76 °C, BF5030, BF5030R
I
D
I
, I
, V
1
6
mA
V
mW
G1S G2S
V
P
G1S G2S
tot
200
200
°C
Storage temperature
Channel temperature
T
T
-55 ... 150
150
stg
ch
Thermal Resistance
Parameter
Channel - soldering point
Symbol
R
thchs
Value
Unit
K/W
1)
BF5030W
BF5030, BF5030R
≤ 280
≤ 370
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2009-05-05
2
BF5030...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
12
6
6
-
-
-
-
-
-
-
V
Drain-source breakdown voltage
V
(BR)DS
I = 20 µA, V
= 0 , V
= 0
D
G1S
G2S
15
15
50
50
Gate1-source breakdown voltage
+I = 10 mA, V = 0 , V = 0
+V
+V
(BR)G1SS
(BR)G2SS
G1SS
G1S
G2S
DS
Gate2-source breakdown voltage
+I = 10 mA, V = 0 , V = 0
G2S
G1S
DS
nA
Gate1-source leakage current
= 6 V, V = 0 , V = 0
+I
+I
V
G1S
G2S
DS
-
Gate2-source leakage current
= 6 V, V = 0 , V = 0
G2SS
V
G2S
G1S
DS
Drain current
I
DSS
V
V
= 3 V, V
= 5 V, V
= 0 , V
= 0 , V
= 3 V
= 4 V
-
-
-
-
100
100
DS
DS
G1S
G1S
G2S
G2S
mA
V
Drain-source current
I
DSX
V
V
= 3 V, V
= 5 V, V
= 3 V, R = 82 kΩ
= 4 V, R = 180 kΩ
-
-
13
13
-
-
DS
DS
G2S
G2S
G1
G1
Gate1-source pinch-off voltage
V
V
G1S(p)
G2S(p)
V
V
= 3 V, V
= 5 V, V
= 3 V, I = 20 µA
= 4 V, I = 20 µA
-
-
0.7
0.7
-
-
DS
DS
G2S
G2S
D
D
Gate2-source pinch-off voltage
V
V
= 3 V, V
= 5 V, V
= 3 V, I = 20 µA
-
-
0.7
0.7
-
-
DS
DS
G1S
G1S
D
= 4 V, I = 20 µA
D
2009-05-05
3
BF5030...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics - (verified by random sampling)
Forward transconductance
g
mS
pF
fs
V
V
= 3 V, I = 10 mA, V
= 3 V
= 4 V
-
-
41
41
-
-
DS
DS
D
G2S
G2S
= 5 V, I = 10 mA, V
D
Gate1 input capacitance
C
C
g1ss
dss
p
V
V
= 3 V, I = 10 mA, V
= 3 V
= 4 V
-
-
2.7
2.8
-
-
DS
DS
D
G2S
G2S
= 5 V, I = 10 mA, V
D
Output capacitance
V
V
= 3 V, I = 10 mA, V
= 3 V
= 4 V
-
-
1.6
1.5
-
-
DS
DS
D
G2S
G2S
= 5 V, I = 10 mA, V
D
Power gain
G
dB
dB
V
V
V
V
= 3 V, I = 10 mA, V
= 3 V, f = 800 MHz
= 3 V, f = 45 MHz
= 4 V, f = 800 MHz
= 4 V, f = 45 MHz
-
-
-
-
24
34
24
34
-
-
-
-
DS
DS
DS
DS
D
G2S
G2S
G2S
G2S
= 3 V, I = 10 mA, V
D
= 5 V, I = 10 mA, V
D
= 5 V, I = 10 mA, V
D
Noise figure
F
V
V
V
V
= 3 V, I = 10 mA, V
= 3 V, f = 800 MHz
= 3 V, f = 45 MHz
= 4 V, f = 800 MHz
= 4 V, f = 45 MHz
-
-
-
-
1.3
0.9
1.3
0.9
-
-
-
-
DS
DS
DS
DS
D
G2S
G2S
G2S
G2S
= 3 V, I = 10 mA, V
D
= 5 V, I = 10 mA, V
D
= 5 V, I = 10 mA, V
D
Gain control range
∆G
p
V
V
= 3 V, V
= 5 V, V
= 3...0 V , f = 800 MHz
= 4...0 V , f = 800 MHz
45
45
50
50
-
-
DS
DS
G2S
G2S
Cross-modulation k=1%, f =50MHz, f
=60MHz X
mod
dB
w
unw
AGC = 0
AGC = 10 dB
AGC = 40 dB
90
-
96
94
92
98
-
-
-
2009-05-05
4
BF5030...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BF5030W
BF5030, BF5030R
220
mA
220
mW
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
°C
°C
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Drain current I = ƒ(I )
Output characteristics I = ƒ(V )
D DS
D
G1
V = 3 V, V
= 3 V
= 4 V
V
= Parameter
DS
G2S
G2S
G1S
… V = 5 V, V
V = 3 V, … V = 5 V
DS DS
DS
35
22
mA
1.4V
1.3V
mA
18
16
14
12
10
8
1.4V
1.3V
25
20
15
10
5
1.2V
1.2V
6
1V
4
1V
2
0
0
µA
V
0
10
20
30
50
0
2
4
6
8
12
I
V
DS
G1
2009-05-05
5
BF5030...
Gate 1 current I = ƒ(V
)
G1S
Gate 1 forward transconductance
g = ƒ(I ),V = Parameter
G1
V
= Parameter
G2S
fs
D
G2S
V = 3 V, … V = 5 V
V = 3 V, … V = 5 V
DS DS
DS
DS
200
60
mS
3V
4V
3V
50
45
40
35
30
25
20
15
10
5
4V
2.5V
µA
3.5V
3V
2V
100
50
0
2V
3V
2.5V
2.5V
2V
1.5V
15
2V
1.5V
10
0
V
mA
ID
0
0.5
1
1.5
2
3
0
5
20
25
30
40
V
G1S
Drain current I = ƒ(V
)
Drain current I = ƒ(V
)
GG
D
G1S
D
V
= Parameter
V = 3 V, V
= 3 V, R = 82 kΩ
= 4 V, R = 180 kΩ
g1
G2S
DS
G2S
G2S
g1
V = 3 V, … V = 5 V
… V = 5 V, V
DS
DS
DS
14
32
4V
3V
mA
mA
3V
2V
24
20
16
12
8
10
8
2.5V
1.5V
6
1.5V
4
2
1V
1V
4
0
0
V
V
0
0.2 0.4 0.6 0.8
1
1.2 1.4
1.8
G1S
0
1
2
3
5
V
V
GG
2009-05-05
6
BF5030...
Drain current I = ƒ(V
)
Power gain G = ƒ (V
), f = 45 MHz
G2S
D
GG
ps
R
= Parameter in kΩ
V = 3 V, V
= 3 V, R = 82 kΩ
= 4 V, R = 180 kΩ
g1
G1
DS
G2S
G2S
g1
V = 3 V, … V = 5 V
… V = 5 V, V
DS
DS
DS
26
40
dB
mA
100k
120k
68k
82k
22
20
18
16
14
12
10
8
20
10
0
150k
180k
100k
120k
6
-10
4
2
0
-20
0
V
V
0
1
2
3
4
6
1
2
4
G2S
V
=V
V
GG DS
Noise figure F = ƒ (V
), f = 45 MHz
Noise figure F = ƒ (V
), f = 800 MHz
G2S
G2S
V = 3 V, V
= 3 V, R = 82 kΩ
V = 3 V, V
= 3 V, R = 82 kΩ
= 4 V, R = 180 kΩ
g1
DS
G2S
G2S
g1
DS
G2S
G2S
g1
… V = 5 V, V
= 4 V, R = 180 kΩ
… V = 5 V, V
DS
g1
DS
8
8
dB
dB
4
2
4
2
0
0
0
0
V
V
1
2
4
1
2
4
G2S
V
V
G2S
2009-05-05
7
BF5030...
Power gain G = ƒ (V
), f = 800 MHz
Crossmodulation V
= (AGC)
ps
G2S
unw
V = 3 V, V
= 3 V, R = 82 kΩ
V = 3 V, V
= 3 V, R = 82 kΩ
= 4 V, R = 180 kΩ
g1
DS
G2S
G2S
g1
DS
G2S
G2S
g1
… V = 5 V, V
= 4 V, R = 180 kΩ
… V = 5 V, V
DS
g1
DS
30
115
dB
dBµV
20
15
10
5
105
100
95
0
-5
-10
-15
-20
90
85
V
dB
0
0.5
1
1.5
2
2.5
3
4
0
5
10 15 20 25 30 35 40
50
VG2
AGC
2009-05-05
8
BF5030...
Crossmodulation test circuit
VAGC
VDS
4n7
R1
10kΩ
2.2 uH
4n7
4n7
RL
50Ω
4n7
50 Ω
RGEN
50Ω
RG1
VGG
Semibiased
2009-05-05
9
Package SOT143
BF5030...
Package Outline
0.1
1
0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
0.08...0.15
+0.1
0.8
-0.05
0...8˚
+0.1
0.4
-0.05
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2009-05-05
10
Package SOT143R
BF5030...
Package Outline
0.1
1
0.1
2.9
B
0.1 MAX.
1.9
4
1
3
2
A
0.2
+0.1
-0.05
0.8
+0.1
-0.05
0.4
0˚...
A
8˚
1.7
M
0.2
M
0.25
B
Foot Print
0.8
1.2
0.8
0.8 0.8
1.2
Marking Layout (Example)
Reverse bar
2005, June
Date code (YM)
Pin 1
Manufacturer
BFP181R
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
Pin 1
1.15
2009-05-05
11
Package SOT343
BF5030...
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2009-05-05
12
BF5030...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2009-05-05
13
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