BF517 [INFINEON]
NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners); NPN硅RF晶体管（对于放大器和振荡器应用在电视信号接收器）
| 型号： | BF517 |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For amplifier and oscillator applications in TV-tuners) |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF 517
NPN Silicon RF Transistor
• For amplifier and oscillator
applications in TV-tuners
Type
Marking Ordering Code
LRs Q62702-F42
Pin Configuration
1 = B 2 = E
Package
BF 517
3 = C
SOT-23
Maximum Ratings of any single Transistor
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
15
20
2.5
25
V
CEO
CBO
EBO
I
I
mA
C
Peak collector current
f ≥ 10 MHz
CM
50
Total power dissipation
P
mW
°C
tot
≤
T
55 °C
280
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
j
- 65 + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
≤
Junction - soldering point
R
340
K/W
thJS
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Aug-02-1996
BF 517
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
nA
-
(BR)CEO
I = 1 mA, I = 0
15
-
-
-
C
B
Collector-base cutoff current
= 15 V, I = 0
I
CBO
V
-
50
250
0.5
CB
E
DC current gain
I = 5 mA, V = 10 V
h
FE
25
-
-
C
CE
Collector-emitter saturation voltage
I = 10 mA, I = 1 mA
V
V
CEsat
0.1
C
B
AC Characteristics of any single Transistor
Transition frequency
I = 5 mA, V = 10 V, f = 200 MHz
f
GHz
pF
T
1
2
-
C
CE
Collector-base capacitance
= 5 V, V = v = 0 , f = 1 MHz
C
C
C
C
F
cb
V
0.3
0.55
0.25
1.45
0.8
0.75
CB
BE
be
Collector-emitter capacitance
= 5 V, V = v = 0 , f = 1 MHz
ce
V
-
-
-
0.4
CE
BE
be
Input capacitance
= 0.5 V, I = i = 0 , f = 1 MHz
ibo
obs
V
-
-
EB
C
c
Output capacitance
= 5 V, V = v = 0 , f = 1 MHz
V
CE
BE
be
Noise figure
I = 5 mA, V = 10 V, f = 100 MHz
dB
C
CE
Ω
Z = 75
-
2.5
-
S
Semiconductor Group
2
Aug-02-1996
BF 517
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
300
mW
Ptot
TS
200
150
100
TA
50
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC p
10 3
K/W
10 3
-
RthJS
10 2
Ptotmax/PtotDC
D = 0
10 2
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
10 1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -1
10 0
10 -6
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
Semiconductor Group
3
Aug-02-1996
BF 517
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
V
BE
= v = 0, f = 1MHz
f = 500MHz
= Parameter
be
V
CE
1.3
pF
3.0
GHz
2.0
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10V
5V
Ccb
fT
3V
2V
1.5
1.0
1V
0.5
0.0
0.7V
0.1
0.0
0
4
8
12
16
20
V
VCB
26
0
5
10
15
20
mA
IC
30
Package
Semiconductor Group
4
Aug-02-1996
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