BF550 [INFINEON]
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners); PNP硅RF晶体管（对于共射放大器级高达300 MHz对于AM / FM收音机混频器的应用程序和VHF电视调谐器）
| 型号： | BF550 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
| 文件： | 总5页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon RF Transistor
BF 550
● For common emitter amplifier stages
up to 300 MHz
● For mixer applications in AM/FM radios
and VHF TV tuners
● Low feedback capacitance
due to shield diffusion
● Controlled low output conductance
Package1)
SOT-23
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BF 550
LA
Q62702-F944
B
E
C
Maximum Ratings
Parameter
Symbol
Values
40
Unit
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
CE0
CB0
EB0
V
V
V
40
4
I
C
25
mA
Base current
IB
5
Total power dissipation, TA ≤ 25 ˚C
Junction temperature
Storage temperature range
P
tot
280
150
mW
˚C
Tj
Tstg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
≤ 450
K/W
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
07.94
Semiconductor Group
1
BF 550
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
(BR) CE0
(BR) CB0
(BR) EB0
40
40
4
–
–
V
IC
= 1 mA, I
Collector-base breakdown voltage
= 10 µA, I = 0
Emitter-base breakdown voltage
= 10 µA, I = 0
Collector cutoff current
= 0
DC current gain
= 1 mA, VCE = 10 V
Base-emitter voltage
= 1 mA, VCE = 10 V
B
= 0
–
–
IC
E
–
–
IE
C
ICB0
–
–
100
250
–
nA
–
V
CB = 30 V, I
E
h
FE
50
–
–
IC
V
BE
0.72
V
IC
AC Characteristics
Transition frequency
f
T
–
–
–
350
–
–
–
MHz
pF
IC
= 1 mA, VCE = 10 V, f = 100 MHz
Collector-base capacitance
CB = 10 V, VBE = 0 V, f = 1 MHz
Collector-emitter capacitance
CE = 10 V, VBE = 0 V, f = 1 MHz
Noise figure
C
C
F
cb
0.33
0.67
V
ce
V
dB
V
CE = 10 V
= 1 mA, f = 100 kHz, R
= 2 mA, f = 100 MHz, R
–
–
2
3.4
–
–
IC
S
= 300 Ω
= 60 Ω
IC
S
Y parameters, common emitter
= 1 mA, VCE = 10 V
IC
f= 0.45 … 10 MHz
g
C
I y21e
C
11e
–
–
–
–
–
–
550
17
35
1.3
5
–
–
–
–
8
10
µS
pF
mS
pF
µS
µS
11e
I
22e
f= 500 kHz
f= 10 MHz
g
g
22e
22e
5
Semiconductor Group
2
BF 550
Total power dissipation Ptot = f (T
A
)
DC current gain hFE = f (I )
C
VCE = 10 V
Collector current I
C
= f (VBE
)
Collector-emitter saturation voltage
V
CE = 10 V
V
CEsat = f (I
C
)
hFE = 10
Semiconductor Group
3
BF 550
Collector cutoff current ICB0 = f (T
A
)
Transition frequency f
T
= f (I )
C
V
CB = 30 V
f= 100 MHz
Collector-base capacitance Ccb = f (VCB
)
Output conductance g22e = f (I
C)
f= 1 MHz
V
CE = 10 V, f = 500 kHz
Semiconductor Group
4
BF 550
Forward transfer admittance I y21e I = f (I
f= 10.7 MHz
C
)
Forward transfer admittance y21e
V
CE = 10 V
Semiconductor Group
5
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