BF888 [INFINEON]
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4;
| 型号： | BF888 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, C Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：502K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF888
High Performance Bipolar NPN RF Transistor
• High transducer gain of typ. 14 dB @ 25 mA,6 GHz
• Low minimum noise figure of typ. 0.85 dB @ 6GHz
• High output compression of typ. 11 dBm @ 25 mA
• Pb-free (RoHS compliant) package
3
2
4
1
• For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF888
Marking
RYs
Pin Configuration
1=B 2=E 3=C 4=E
Package
SOT343
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T = 25 °C
4.0
3.5
13
13
1.2
30
A
T = − 55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
V
V
V
CES
CBO
EBO
mA
mW
°C
I
I
C
3
160
B
1)
P
tot
T ≤ 89 °C
S
150
-55 ... 150
-55 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
J
1T is measured on the emitter lead at the soldering point to the pcb
s
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 380
Unit
K/W
1)
R
thJS
2010-04-06
1
BF888
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
4
-
4.7
1
-
-
-
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
nA
Collector-emitter cutoff current
= 5 V, V = 0
I
CES
V
CE
BE
-
1
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
-
10
250
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
-
-
DC current gain
I = 25 V, V = 3 V, pulse measured
h
FE
C
CE
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2010-04-06
2
BF888
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
-
47
-
-
-
-
GHz
pF
f
T
I = 25 mA, V = 3 V, f = 2 GHz
C
CE
-
-
-
0.08
0.35
0.45
Collector-base capacitance
= 3 V, f=1 MHz, V = 0, emitter grounded
C
C
C
F
cb
ce
eb
V
CB
BE
Collector emitter capacitance
= 3 V, f = 1 MHz, V = 0, base grounded
V
CE
BE
Emitter-base capacitance
= 0.5 V, f=1 MHz, V =0, collector grounded
V
EB
CB
dB
Noise figure
I = 8 mA, V = 3 V, f = 1.8 GHz, Z = Z
Sopt
-
-
0.5
0.85
-
-
C
CE
S
I = 8 mA, V = 3 V, f = 6 GHz, Z = Z
C
CE
S
Sopt
Power gain
G
G
-
27
-
dB
dB
ms
ma
I = 25 mA, V = 3 V, Z = Z
Z = Z
,
Lopt
C
CE
S
Sopt, L
f = 1.8 GHz
1)
-
17
-
Power gain, maximum available
I = 25 mA, V = 3 V, Z = Z
Z = Z
,
Lopt
C
CE
S
Sopt, L
f = 6 GHz
2
Transducer gain
|S
|
dB
21e
I = 25 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
f = 6 GHz
-
-
24.5
14
-
-
2)
Third order intercept point at output
= 3 V, I = 25 mA, f = 1.8 GHz,
IP
-
25
-
dBm
3
V
CE
C
Z = Z = 50 Ω
S
L
1dB Compression point
P
-1dB
-
11
-
I = 25 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1/2
1G
ma
= |S
/ S
| (k-(k²-1)
)
21e 12e
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
2010-04-06
3
Package SOT343
BF888
Package Outline
0.1
0.9
0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2010-04-06
4
BF888
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2010-04-06
5
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