首页 |元器件品牌

BF998-E6433 [INFINEON]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
BF998-E6433
型号： BF998-E6433
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件： 总9页 (文件大小：90K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BF998...  
Silicon N_Channel MOSFET Tetrode  
• Short-channel transistor  
with high S / C quality factor  
• For low-noise, gain-controlled  
input stage up to 1 GHz  
1)  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Package  
Pin Configuration  
Marking  
MOs  
BF998  
BF998R  
SOT143  
1=S  
2=D  
2=S  
3=G2 4=G1  
3=G1 4=G2  
-
-
-
-
SOT143R 1=D  
MRs  
Maximum Ratings  
Parameter  
Symbol  
Value  
12  
Unit  
V
Drain-source voltage  
V
DS  
30  
mA  
Continuous drain current  
Gate 1/ gate 2-source current  
Total power dissipation  
I
D
10  
±I  
G1/2SM  
tot  
200  
P
T ≤ 76 °C, BF998, BF998R  
S
°C  
Storage temperature  
Channel temperature  
T
-55 ... 150  
150  
stg  
T
ch  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Channel - soldering point , BF998, BF998R  
R
≤ 370  
thchs  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-20  
1
BF998...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
12  
-
-
V
Drain-source breakdown voltage  
V
(BR)DS  
I = 10 µA, V  
= -4 V, V  
= -4 V  
D
G1S  
G2S  
Gate 1 source breakdown voltage  
±I = 10 mA, V = V = 0  
±V  
±V  
8
8
-
-
12  
12  
(BR)G1SS  
(BR)G2SS  
G1SS  
G2S  
G2S  
DS  
Gate2 source breakdown voltage  
±I = 10 mA, V = V = 0  
G2S  
G2S  
DS  
Gate 1 source leakage current  
±V = 5 V, V = V = 0  
±I  
±I  
-
-
-
-
50  
50  
15  
nA  
nA  
mA  
G1S  
G2S  
DS  
Gate 2 source leakage current  
±V = 5 V, V = V = 0  
G2SS  
G2S  
G2S  
DS  
5
9
Drain current  
= 8 V, V  
I
DSS  
V
= 0 , V  
= 4 V  
G2S  
DS  
G1S  
Gate 1 source pinch-off voltage  
= 8 V, V = 4 V, I = 20 µA  
-V  
-V  
-
-
0.8  
0.8  
2.5  
2
V
G1S(p)  
G2S(p)  
V
DS  
G2S  
D
Gate 2 source pinch-off voltage  
= 8 V, V = 0 , I = 20 µA  
V
DS  
G1S  
D
2007-04-20  
2
BF998...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
20  
-
typ. max.  
AC Characteristics (verified by random sampling)  
Forward transconductance  
24  
-
-
g
fs  
V
= 8 V, I = 10 mA, V  
= 4 V  
DS  
D
G2S  
2.1  
2.5 pF  
Gate1 input capacitance  
= 8 V, I = 10 mA, V  
C
C
C
C
g1ss  
g2ss  
dg1  
dss  
p
V
= 4 V,  
DS  
D
G2S  
f = 10 MHz  
Gate 2 input capacitance  
-
1.2  
-
pF  
V
= 8 V, I = 10 mA, V  
= 4 V,  
= 4 V,  
= 4 V,  
DS  
D
G2S  
G2S  
G2S  
f = 10 MHz  
Feedback capacitance  
-
-
25  
-
-
fF  
V
= 8 V, I = 10 mA, V  
D
DS  
f = 10 MHz  
1.1  
pF  
Output capacitance  
V
= 8 V, I = 10 mA, V  
D
DS  
f = 10 MHz  
Power gain  
G
dB  
dB  
V
= 8 V, I = 10 mA, V  
= 4 V,  
= 4 V,  
DS  
D
G2S  
f = 45 MHz  
= 8 V, I = 10 mA, V  
-
-
28  
20  
-
-
V
DS  
D
G2S  
f = 800 MHz  
Noise figure  
F
V
= 8 V, I = 10 mA, V  
= 4 V,  
= 4 V,  
DS  
D
G2S  
f = 45 MHz  
= 8 V, I = 10 mA, V  
-
2.8  
-
V
DS  
D
G2S  
f = 800 MHz  
-
1.8  
50  
-
-
40  
Gain control range  
∆G  
p
V
= 8 V, V  
= 4 ...-2 V, f = 800 MHz  
G2S  
DS  
2007-04-20  
3
BF998...  
Total power dissipation P = ƒ(T )  
Output characteristics I = ƒ(V  
)
DS  
tot  
S
D
BF998, BF998R  
V
V
= 4 V  
G2S  
G1S  
= Parameter  
26  
mA  
220  
mW  
0.4V  
0.2V  
22  
180  
160  
140  
120  
100  
80  
20  
18  
16  
14  
12  
10  
8
0V  
-0.2V  
-0.4V  
60  
6
40  
4
20  
2
0
0
°C  
V
0
15 30 45 60 75 90 105 120  
150  
0
2
4
6
8
10  
14  
T
V
DS  
S
Gate 1 forward transconductance  
Gate 1 forward transconductance  
g = ƒ(I )  
g
= ƒ (V  
)
fs  
D
fs1  
G1S  
V
= 5V, V  
= Parameter  
DS  
G2S  
26  
26  
mS  
mS  
4V  
4V  
22  
20  
18  
16  
14  
12  
10  
8
22  
20  
18  
16  
14  
12  
10  
8
2V  
2V  
1V  
1V  
0V  
6
6
4
4
0V  
2
2
0
0
mA  
V
0
4
8
12  
16  
24  
-1  
-0.75 -0.5 -0.25  
0
0.25  
0.75  
V
G1S  
I
D
2007-04-20  
4
BF998...  
Drain current I = ƒ(V  
)
Power gain G = ƒ (V  
)
G2S  
D
G1S  
ps  
V
V
= 5V  
f = 45 MHz  
DS  
= Parameter  
G2S  
30  
30  
dB  
4V  
2V  
mA  
20  
20  
15  
10  
5
1V  
15  
10  
5
0V  
0
0
V
V
-1 -0.75 -0.5 -0.25  
0
0.25 0.5  
1
0
1
2
4
V
G1S  
V
G2S  
Noise figure F = ƒ (V  
f = 45 MHz  
)
Noise figure F = ƒ (V  
)
G2S  
G2S  
f = 800 MHz  
10  
dB  
5
dB  
8
7
6
5
4
3
2
1
0
3
2
1
0
V
V
0
1
2
4
0
1
2
4
V
G2S  
V
G2S  
2007-04-20  
5
BF998...  
Power gain G = ƒ (V  
)
Gate 1 input capacitance C  
= ƒ (V  
)
G1S  
ps  
G2S  
g1ss  
f = 800 MHz  
20  
dB  
2.6  
pF  
2.2  
2
10  
5
1.8  
1.6  
1.4  
1.2  
1
0
-5  
-10  
V
V
0
1
2
4
-3  
-2.6 -2.2 -1.8 -1.4  
-1  
-0.6  
0.2  
V
G2S  
V
G1S  
Output capacitance C  
= ƒ(V  
)
dss  
DS  
4
pF  
3
2.5  
2
1.5  
1
0.5  
0
V
0
2
4
6
8
12  
V
DS  
2007-04-20  
6
Package SOT143  
BF998...  
Package Outline  
±0.1  
1
±0.1  
2.9  
B
1.9  
0.1 MAX.  
4
3
1
2
A
0.2  
+0.1  
-0.05  
0.08...0.15  
0.8  
0...8˚  
+0.1  
-0.05  
0.4  
M
M
0.2  
0.25  
B
A
1.7  
Foot Print  
0.8 1.2 0.8  
1.2  
0.8  
0.8  
Marking Layout (Example)  
Manufacturer  
2005, June  
RF s  
Date code (YM)  
Pin 1  
BFP181  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
1.15  
Pin 1  
2007-04-20  
7
Package SOT143R  
BF998...  
Package Outline  
±0.1  
1
±0.1  
2.9  
B
0.1 MAX.  
1.9  
4
1
3
2
A
0.2  
+0.1  
-0.05  
0.8  
+0.1  
-0.05  
0.4  
0˚...  
A
8˚  
1.7  
M
0.2  
M
0.25  
B
Foot Print  
0.8  
1.2  
0.8  
0.8 0.8  
1.2  
Marking Layout (Example)  
Reverse bar  
2005, June  
Date code (YM)  
Pin 1  
Manufacturer  
BFP181R  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
Pin 1  
1.15  
2007-04-20  
8
BF998...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-04-20  
9

相关型号：

BF998-TAPE-13

 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
NXP

BF998-TAPE-7

 TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
NXP

BF998/T1

 TRANSISTOR MOSFET
ETC

BF998A

 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
VISHAY

BF998A

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
TEMIC

BF998A-GS08

 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
VISHAY

BF998A-GS18

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
VISHAY

BF998B

 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
VISHAY

BF998B

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
TEMIC

BF998B-GS08

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

BF998B-GS18

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
VISHAY

BF998E6327

 RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明