BF999_07 [INFINEON]
Silicon N-Channel MOSFET Triode; 硅N沟道MOSFET三极管
| 型号： | BF999_07 |
| 厂家： | 
Infineon |
| 描述： | Silicon N-Channel MOSFET Triode |
| 文件： | 总6页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF999
Silicon N-Channel MOSFET Triode
• For high-frequency stages up to 300 MHz
2
3
preferably in FM applications
1
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BF999
LBs
1=G 2=D 3=S
-
-
-
SOT23
Maximum Ratings
Parameter
Symbol
Value
Unit
V
20
30
Drain-source voltage
V
DS
mA
Continuous drain current
Gate-source peak current
Total power dissipation
I
D
± I
10
mA
GSM
200
mW
P
tot
T ≤ 76 °C
S
°C
Storage temperature
Channel temperature
T
-55 ... 150
150
stg
T
ch
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Channel - soldering point
R
≤ 370
thchs
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
1
BF999
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
20
-
-
V
Drain-source breakdown voltage
V
(BR)DS
I = 10 µA, -V = 4 V
D
GS
Gate-source breakdown voltage
± I = 10 mA, V = 0
±V
6.5
-
-
-
12
50
16
(BR)GSS
GSS
GS
DS
Gate-source leakage current
± I
nA
± V = 5 V, V = 0
GS
DS
5
10
mA
Drain current
I
DSS
V
= 10 V, V = 0
GS
DS
Gate-source pinch-off voltage
= 10 V, I = 20 µA
-V
-
0.8
1.5
V
GS(p)
V
DS
D
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
14
20
-
Forward transconductance
g
mS
fs
V
= 10 V, I = 10 mA
D
DS
Gate input capacitance
= 10 V, I = 10 mA, f = 10 MHz
C
-
-
2.5
0.9
-
-
pF
pF
gss
V
DS
D
Output capacitance
= 10 V, I = 10 mA, f = 10 MHz
C
dss
V
DS
D
Power gain
= 10 V, I = 10 mA, f = 45 MHz
G
-
-
27
-
-
dB
dB
p
V
DS
D
2.1
Noise figure
= 10 V, I = 10 mA, f = 45 MHz
F
V
DS
D
2007-04-20
2
BF999
Total power dissipation P = ƒ(T )
Output characteristics I = ƒ(V )
D DS
tot
S
250
18
mA
0.3V
0.2V
mW
14
12
10
8
0.1V
0V
150
100
50
-0.1V
-0.2V
6
-0.3V
-0.4V
4
2
0
0
°C
V
0
15 30 45 60 75 90 105 120
150
0
5
10
20
T
V
DS
S
Gate transconductance g = ƒ(V
)
Drain current I = (V
)
GS
fs
GS
D
30
30
mS
mA
20
15
10
5
20
15
10
5
0
0
V
V
-1
-0.5
0
0.5
1.5
-1
1
V
V
GS
GS
2007-04-20
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BF999
Gate input capacitance C
= ƒ(V
)
Output capacitance C
= ƒ(V )
gss
GS
dss
DS
3
3
pF
pF
1
0
1
0
V
V
-2
-1
1
0
5
15
V
V
DS
GS
2007-04-20
4
Package SOT23
BF999
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-20
5
BF999
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
6
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