BFP181-E6433 [INFINEON]

Transistor;
BFP181-E6433
型号: BFP181-E6433
厂家: Infineon    Infineon
描述:

Transistor

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中文:  中文翻译
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BFP181  
NPN Silicon RF Transistor*  
For low noise, high-gain broadband amplifiers at  
3
collector currents from 0.5 mA to 12 mA  
2
4
1
f = 8 GHz, F = 0.9 dB at 900 MHz  
T
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
* Short term description  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Marking  
Pin Configuration  
Package  
SOT143  
BFP181  
RFs  
1 = C 2 = E 3 = B 4 = E -  
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
12  
20  
20  
2
V
Collector-emitter voltage  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
V
CEO  
CES  
CBO  
EBO  
20  
2
mA  
mW  
°C  
I
I
C
Base current  
B
2)  
175  
Total power dissipation  
P
tot  
T 75 °C  
S
150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
-65 ... 150  
-65 ... 150  
A
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
3)  
K/W  
Junction - soldering point  
R
430  
thJS  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
3For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-03-29  
1
BFP181  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
12  
-
-
-
V
Collector-emitter breakdown voltage  
V
(BR)CEO  
I = 1 mA, I = 0  
C
B
-
100 µA  
100 nA  
Collector-emitter cutoff current  
= 20 V, V = 0  
I
CES  
V
CE  
BE  
-
-
-
Collector-base cutoff current  
= 10 V, I = 0  
I
CBO  
V
CB  
E
-
1
µA  
-
Emitter-base cutoff current  
= 1 V, I = 0  
I
EBO  
V
EB  
C
70  
100  
140  
DC current gain-  
I = 5 mA, V = 8 V, pulse measured  
h
FE  
C
CE  
2007-03-29  
2
BFP181  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics (verified by random sampling)  
6
8
-
GHz  
Transition frequency  
f
T
I = 10 mA, V = 8 V, f = 500 MHz  
C
CE  
-
-
-
0.19  
0.4 pF  
Collector-base capacitance  
= 10 V, f = 1 MHz, V = 0 ,  
C
C
C
F
cb  
ce  
eb  
V
CB  
BE  
emitter grounded  
0.3  
0.4  
-
-
Collector emitter capacitance  
V
= 10 V, f = 1 MHz, V = 0 ,  
BE  
CE  
base grounded  
Emitter-base capacitance  
V
= 0.5 V, f = 1 MHz, V = 0 ,  
CB  
EB  
collector grounded  
Noise figure  
dB  
I = 2 mA, V = 8 V, Z = Z  
,
,
C
CE  
S
Sopt  
f = 900 MHz  
-
-
0.9  
1.2  
-
I = 2 mA, V = 8 V, Z = Z  
C
CE  
S
Sopt  
f = 1.8 GHz  
-
1)  
Power gain, maximum stable  
G
dB  
ms  
I = 5 mA, V = 8 V, Z = Z  
, Z = Z  
,
,
C
CE  
S
Sopt  
L
Lopt  
f = 900 MHz  
-
-
21  
-
-
I = 5 mA, V = 8 V, Z = Z  
, Z = Z  
L
C
CE  
S
Sopt  
Lopt  
f = 1.8 GHz  
17.5  
2
Transducer gain  
|S  
|
21e  
I = 5 mA, V = 8 V, Z = Z = 50 ,  
C
CE  
S
L
f = 900 MHz  
-
-
17.5  
12.5  
-
-
I = 5 mA, V = 8 V, Z = Z = 50 ,  
C
CE  
S
L
f = 1.8 GHz  
1G = |S / S  
|
12  
ms  
21  
2007-03-29  
3
BFP181  
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):  
Transistor Chip Data:  
0.0010519 fA  
-
0.90617  
12.603  
-
IS =  
BF =  
96.461  
0.12146  
16.504  
0.24951  
9.9037  
2.1372  
0.73155  
0.33814  
0
NF =  
22.403  
1.7631  
5.1127  
1.6528  
6.6315  
1.8168  
17.028  
1.0549  
1.1633  
2.7449  
0
V
-
A
-
fA  
-
VAF =  
NE =  
IKF =  
BR =  
ISE =  
NR =  
0.87757  
0.01195  
0.69278  
2.2171  
V
-
A
fA  
mA  
VAR =  
NC =  
RBM =  
CJE =  
TF =  
IKR =  
RB =  
ISC =  
IRB =  
RC =  
-
fF  
RE =  
-
V
0.43619  
0.12571  
319.69  
VJE =  
XTF =  
PTF =  
MJC =  
CJS =  
XTB =  
FC =  
MJE =  
VTF =  
CJC =  
XCJC =  
VJS =  
EG =  
ps  
mA  
V
-
V
deg  
fF  
ITF =  
VJC =  
TR =  
-
0.082903  
0.75  
-
0.30013  
0
ns  
-
fF  
-
V
eV  
K
1.11  
MJS =  
XTI =  
0
3
-
300  
0.99768  
TNOM  
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:  
Institut für Mobil- und Satellitentechnik (IMST)  
Package Equivalent Circuit:  
0.89  
0.73  
0.4  
L =  
nH  
nH  
nH  
nH  
nH  
nH  
fF  
BI  
L
=
BO  
L =  
EI  
0.15  
0
L
=
EO  
L =  
CI  
0.42  
189  
15  
L
=
=
=
=
CO  
C
BE  
C
fF  
CB  
187  
C
fF  
CE  
Valid up to 6GHz  
For examples and ready to use parameters  
please contact your local Infineon Technologies  
distributor or sales office to obtain a Infineon  
Technologies CD-ROM or see Internet:  
http://www.infineon.com  
2007-03-29  
4
BFP181  
Total power dissipation P = ƒ(T )  
Permissible Pulse Load R  
= ƒ(t )  
tot  
S
thJS  
p
10 3  
200  
mW  
160  
140  
120  
100  
80  
K/W  
10 2  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
60  
40  
20  
10 1  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
0
10 0  
°C  
s
0
20  
40  
60  
80  
100 120  
150  
T
t
p
S
Permissible Pulse Load  
P
/P  
= ƒ(t )  
totmax totDC  
p
10 2  
-
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.1  
0.5  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
t
p
2007-03-29  
5
Package SOT143  
BFP181  
Package Outline  
±0.1  
1
±0.1  
2.9  
B
1.9  
0.1 MAX.  
4
3
1
2
A
0.2  
+0.1  
-0.05  
0.08...0.15  
0.8  
0...8˚  
+0.1  
-0.05  
0.4  
M
M
0.2  
0.25  
B
A
1.7  
Foot Print  
0.8 1.2 0.8  
1.2  
0.8  
0.8  
Marking Layout (Example)  
Manufacturer  
2005, June  
RF s  
Date code (YM)  
Pin 1  
BFP181  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
1.15  
Pin 1  
2007-03-29  
6
BFP181  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-03-29  
7

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