BFP182E6327 [INFINEON]
RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,;
| 型号： | BFP182E6327 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.035A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP182
NPN Silicon RF Transistor*
• For low noise, high-gain broadband amplifiers at
3
collector currents from 1 mA to 20 mA
2
4
1
• f = 8 GHz, F = 0.9 dB at 900 MHz
T
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP182
Marking
RGs
Pin Configuration
1=C 2=E 3=B 4 = E -
Package
SOT143
-
Maximum Ratings
Parameter
Symbol
Value
Unit
12
20
20
2
35
4
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
CEO
CES
CBO
EBO
mA
mW
°C
I
I
C
Base current
Total power dissipation
B
2)
250
P
tot
T ≤ 69 °C
S
150
-65 ... 150
-65 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 325
Unit
K/W
3)
R
thJS
1Pb-containing package may be available upon special request
2T is measured on the collector lead at the soldering point to the pcb
S
3For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
1
BFP182
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
12
-
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
100 µA
100 nA
Collector-emitter cutoff current
= 20 V, V = 0
I
CES
V
CE
BE
-
-
-
Collector-base cutoff current
= 10 V, I = 0
I
CBO
V
CB
E
-
1
µA
-
Emitter-base cutoff current
= 1 V, I = 0
I
EBO
V
EB
C
70
100
140
DC current gain-
I = 10 mA, V = 8 V, pulse measured
h
FE
C
CE
2007-04-20
2
BFP182
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
Transition frequency
6
8
-
GHz
f
T
I = 15 mA, V = 8 V, f = 500 MHz
C
CE
-
-
-
0.25
0.4 pF
Collector-base capacitance
= 10 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
F
cb
ce
eb
V
CB
BE
0.3
0.8
-
-
Collector emitter capacitance
V
= 10 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
dB
Noise figure
I = 3 mA, V = 8 V, Z = Z
f = 900 MHz
,
,
C
CE
S
Sopt
-
0.9
-
-
I = 3 mA, V = 8 V, Z = Z
C
CE
S
Sopt
f = 1.8 GHz
-
-
1.3
22
1)
Power gain, maximum stable
G
G
-
dB
dB
ms
ma
I = 10 mA, V = 8 V, Z = Z
, Z = Z
,
,
C
CE
S
Sopt
L
Lopt
f = 900 MHz
2)
-
16.5
-
Power gain, maximum available
I = 10 mA, V = 8 V, Z = Z
, Z = Z
L
C
CE
S
Sopt
Lopt
f = 1.8 GHz
2
Transducer gain
|S
|
dB
21e
I = 10 mA, V = 8 V, Z = Z = 50 Ω,
C
CE
S
L
f = 900 MHz
-
-
18
12
-
-
I = 10 mA, V = 8 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
1G = |S / S
|
ms
21
12
1/2
2G
= |S
/ S
| (k-(k²-1)
)
ma
21e 12e
2007-04-20
3
BFP182
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
4.8499
21.742
0.91624
2.2595
0.5641
2.8263
8.8619
22.72
6.5523
1.0132
1.7541
0
fA
V
-
V
-
-
A
-
A
Ω
-
V
-
deg
-
fF
-
0.56639
8.4254
0.54818
5.9438
-
fA
-
IS =
VAF =
NE =
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
84.113
0.14414
10.004
0.039478
3.4217
2.1858
1.0378
0.43147
0
NF =
ISE =
NR =
fA
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
0.071955 mA
1.8159
0.40796
0.34608
490.25
0.19281
0.75
Ω
fF
Ω
-
V
fF
-
V
eV
K
ps
mA
V
ns
-
0.31068
0
0
1.11
300
MJS =
XTI =
3
-
0.64175
TNOM
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
0.89
0.73
0.4
0.15
0
0.42
189
15
L =
nH
nH
nH
nH
nH
nH
fF
BI
C4
L
=
BO
L =
C1
=
L =
CI
L 2
L 3
L
=
=
=
=
CO
Transistor
Chip
B’
C’
B
C
C
BE
C
fF
fF
CB
E’
187
C
CE
C6
C5
Valid up to 6GHz
C2
C3
L 1
EHA07524
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
2007-04-20
4
BFP182
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
300
mW
K/W
200
150
100
50
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC
p
10 2
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
0.2
0.5
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
2007-04-20
5
Package SOT143
BFP182
Package Outline
±0.1
1
±0.1
2.9
B
1.9
0.1 MAX.
4
3
1
2
A
0.2
+0.1
-0.05
0.08...0.15
0.8
0...8˚
+0.1
-0.05
0.4
M
M
0.2
0.25
B
A
1.7
Foot Print
0.8 1.2 0.8
1.2
0.8
0.8
Marking Layout (Example)
Manufacturer
2005, June
RF s
Date code (YM)
Pin 1
BFP181
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
3.15
1.15
Pin 1
2007-04-20
6
BFP182
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
7
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