BFP740F-E6433 [INFINEON]
Transistor;
| 型号： | BFP740F-E6433 |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总10页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP740F
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
3
2
1
4
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
Top View
4
3
XYs
G
= 27.5 dB at 1.8 GHz
1
2
ms
• Gold metallization for extra high reliability
Direction of Unreeling
• 150 GHz f -Silicon Germanium technology
T
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
1=B 2=E 3=C 4=E
Package
TSFP-4
BFP740F
R7s
-
-
1Pb-containing package may be available upon special request
2007-04-20
1
BFP740F
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T > 0°C
4
3.5
13
13
1.2
30
3
A
T ≤ 0°C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CES
CBO
EBO
mA
mW
°C
I
I
C
Base current
B
1)
160
Total power dissipation
P
tot
T ≤ 90°C
S
150
Junction temperature
Ambient temperature
Storage temperature
T
T
T
j
-65 ... 150
-65 ... 150
A
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 370
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
4
4.7
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
30
µA
Collector-emitter cutoff current
= 13 V, V = 0
I
CES
V
CE
BE
-
-
-
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
3
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
160
250
400
DC current gain
I = 25 mA, V = 3 V, pulse measured
h
FE
C
CE
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-04-20
2
BFP740F
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
-
42
-
GHz
Transition frequency
f
T
I = 25 mA, V = 3 V, f = 1 GHz
C
CE
-
-
-
0.08
0.14 pF
Collector-base capacitance
= 3 V, f = 1 MHz, V = 0 ,
C
C
C
F
cb
ce
eb
V
CB
BE
emitter grounded
0.2
-
-
Collector emitter capacitance
V
= 3 V, f = 1 MHz, V = 0 ,
BE
CE
base grounded
0.44
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
Noise figure
dB
I = 8 mA, V = 3 V, f = 1.8 GHz, Z = Z
Sopt
-
-
0.5
-
-
C
CE
S
I = 8 mA, V = 3 V, f = 6 GHz, Z = Z
Sopt
0.75
C
CE
S
1)
Power gain, maximum stable
G
G
-
27.5
-
dB
dB
ms
ma
I = 25 mA, V = 3 V, Z = Z
,
C
CE
S
Sopt
Z = Z
L
, f = 1.8 GHz
Lopt
1)
-
19
-
Power gain, maximum available
I = 25 mA, V = 3 V, Z = Z
Sopt
,
C
CE
S
Z = Z
, f = 6 GHz
Lopt
L
2
Transducer gain
|S
|
dB
21e
I = 25 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
-
-
25
15
-
-
f = 6 GHz
2)
Third order intercept point at output
= 3 V, I = 25 mA, Z =Z =50 Ω, f = 1.8 GHz
IP
-
25
-
dBm
3
V
CE
C
S
L
1dB Compression point at output
P
-1dB
-
11
-
I = 25 mA, V = 3 V, Z =Z =50 Ω, f = 1.8 GHz
C
CE
S
L
1/2
| (k-(k²-1) ), G
21e 12e ms
1G
= |S
/ S
= |S
/ S
|
ma
21e 12e
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2007-04-20
3
BFP740F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
384.4
400
1.586
1.28
1.5
aA
V
-
k
1.018
4.296
1
-
IS =
BF =
1.1
512.1
62
NF =
mA
-
fA
-
VAF =
NE =
IKF =
BR =
ISE =
NR =
V
-
mA
3.85
10
fA
A
VAR =
NC =
RBM =
CJE =
TF =
IKR =
RB =
5
ISC =
IRB =
RC =
3.23
90
Ω
1.69
220
2.1
6.88
70
Ω
fF
RE =
mΩ
mV
Ω
m
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
590
3
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
ps
mA
mV
ps
m
-
1.32
99.5
10
V
290
550
13
mdeg
fF
m
ITF =
VJC =
TR =
100
152
79.7
-2.2
950
0
m
fF
-
570
1.11
298
mV
eV
K
180
910
MJS =
XTI =
AF =
m
m
TNOM
1
-
KF =
-
All parameters are ready to use, no scalling is necessary.
0.1
0.2
20
LBC =
nH
nH
pH
nH
nH
pH
pF
fF
Package Equivalent Circuit:
LCC =
LEC =
CBS
RBS
CBCC
LCC
LBB =
0.411
0.696
C
LCB =
BFP740F_Chip
LEB =
21
0.1
S
E
B
RCS CCS
LBB
LBC
LCB
B
C
CBEC
RES
CES
CBEC =
CBCC =
CES =
CBS =
CCS =
CCEO =
CBEO =
1
LEC
0.34
39
REC
pF
fF
CBEI
CCEI
75
fF
LEB
0.177
92
pF
fF
CBEO
CCEO
CCEI = 0.217
CBEI = 52
pF
fF
E
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
REC =
RBS =
RCS =
RES =
2
3.5
Ω
kΩ
kΩ
Ω
1.65
90
Valid up to 6GHz
2007-04-20
4
BFP740F
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
180
mW
K/W
140
120
100
80
D = 0,5
0,2
0,1
10 2
0,05
0,02
0,01
0,005
0
60
40
20
10 1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
0
10 0
°C
s
0
15 30 45 60 75 90 105 120
150
T
t
p
S
Permissible Pulse Load
Collector-base capacitance C = ƒ (V
)
CB
cb
P
/P
= ƒ(t )
f = 1 MHz
totmax totDC
p
10 2
0.2
0.18
0.16
0.14
0.12
0.1
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
0.08
0.06
0.04
0.02
0
0.2
0.5
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
0
2
4
6
8
10
12
t
VCB [V]
p
2007-04-20
5
BFP740F
Third order Intercept Point IP = ƒ (I )
Transition frequency f = ƒ(I )
T C
3
C
(Output, Z = Z = 50 Ω )
V
= parameter in V, f = 2 GHz
CE
S
L
V
= parameter, f = 900 MHz
CE
30
50
4.00V
3.00V
2V to 4V
27
24
21
18
15
12
9
45
40
35
30
25
20
15
10
5
2.00V
1.00V
1.00V
0.75V
6
0.50V
3
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
IC [mA]
IC [mA]
Power gain G , G = ƒ (f)
Power gain G , G = ƒ (I )
ma ms C
ma
ms
V
= 3 V, I = 25 mA
V
= 3 V
CE
CE
C
f = parameter in GHz
55
34
32
30
28
26
24
22
20
18
16
14
12
10
50
45
40
35
30
25
20
15
10
5
0.90GHz
1.80GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
Gms
Gma
2
|S21|
0
1
2
3
4
5
6
0
5
10
15
20
25
30
35
IC [mA]
f [GHz]
[GHz]
2007-04-20
6
BFP740F
Power gain G , G = ƒ (V
)
Noise figure F = ƒ(I )
C
ma
ms
CE
I = 25 mA
V
= 3 V, f = parameter in GHz
CE
C
f = parameter in GHz
Z = Z
S
Sopt
36
32
28
24
20
16
12
8
2
1.8
1.6
1.4
1.2
1
0.90GHz
1.80GHz
2.40GHz
3.00GHz
f = 6GHz
f = 5GHz
f = 3GHz
4.00GHz
5.00GHz
f = 2.4GHz
f = 1.8GHz
f = 0.9GHz
6.00GHz
0.8
0.6
0.4
0.2
4
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5
10
15
20
25
30
VCE [V]
Ic [mA]
Noise figure F = ƒ(I )
Noise figure F = ƒ(f)
C
V
= 3 V, f = 1.8 GHz
V
= 3 V, Z = Z
CE S Sopt
CE
2
1.4
1.8
1.2
1
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
ZS = 50Ω
ZS = ZSopt
0.8
0.6
0.4
0.2
0
IC
= 25mA
IC = 8mA
0
5
10
15
Ic [mA]
20
25
30
0
1
2
3
4
5
6
7
f [GHz]
2007-04-20
7
BFP740F
Source impedance for min.
noise figure vs. frequency
V
= 3 V, I = 8 mA / 25 mA
CE
C
1
1.5
0.5
2
0.4
3
0.3
4
Ic = 8mA
0.2
5
4GHz
3GHz
5GHz
0.1
0
10
2.4GHz
1.8GHz
2
0.9GHz
6GHz
0
0.2
1
4
−0.1
−10
−0.2
−0.3
−5
−4
Ic = 25mA
−3
−0.4
−0.5
−2
−1.5
−1
2007-04-20
8
Package TSFP-4
BFP740F
Package Outline
±0.05
1.4
±0.04
0.55
±0.05
0.2
4
1
3
2
±0.05
±0.05
0.2
0.15
±0.05
0.5
±0.05
0.5
Foot Print
0.35
0.5
0.5
Marking Layout (Example)
Manufacturer
BFP420F
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
1.55
0.7
Pin 1
2007-04-20
9
BFP740F
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
10
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