BFP843 [INFINEON]
BFP843 是一种低噪声宽带预匹配射频异质结双极晶体管 (HBT)。;
| 型号： | BFP843 |
| 厂家： | 
Infineon |
| 描述： | BFP843 是一种低噪声宽带预匹配射频异质结双极晶体管 (HBT)。 射频 晶体管 |
| 文件： | 总21页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Product description
The BFP843 is a robust low noise broadband pre-matched RF heterojunction bipolar
transistor (HBT).
Feature list
•
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
•
High transition frequency enables best in class noise performance at high frequencies:
NFmin = 1.2 dB at 5.5 GHz, 1.8 V, 8 mA
•
•
•
High gain Gma = 17 dB at 5.5 GHz, 1.8 V, 15 mA
OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding
collector resistor)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
WLAN, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS,
BeiDou, Galileo)
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFP843 / BFP843H6327XTSA1
SOT343
1 = B 2 = E 3 = C 4 = E T2s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1
3.2
3.3
3.4
3.5
4
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min. Max.
2.25
Unit Note or test condition
Collector emitter voltage
Collector emitter voltage 1)
VCEO
–
V
Open base
2.0
TA = -55 °C, open base
E-B short circuited
VCES
2.25
2.0
TA = -55 °C,
E-B short circuited
Collector base voltage 2)
VCBO
2.9
2.6
5
Open emitter
TA = -55 °C, open emitter
Base current
IB
-5
–
mA
–
Collector current
RF input power
ESD stress pulse
IC
55
20
1.5
PRFin
VESD
–
dBm
kV
-1.5
HBM, all pins, acc. to
JESD22-A114
Total power dissipation 3)
Junction temperature
Storage temperature
Ptot
TJ
–
125
150
mW TS ≤ 99 °C
°C
–
–
TStg
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
VCES is similar to VCEO due to design.
VCBO is similar to VCEO due to design.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
2
3
Datasheet
3
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Symbol
Parameter
Values
Unit Note or test condition
Min. Typ. Max.
Junction - soldering point
RthJS
–
405
–
K/W
–
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
TS [°C]
100
125
150
Figure 1
Total power dissipation Ptot = f(TS)
Datasheet
4
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Min. Typ. Max.
V(BR)CEO 2.25 2.6
Unit Note or test condition
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
–
V
IC = 1 mA, IB = 0,
open base
ICES
ICBO
IEBO
hFE
–
–
400 1) nA
400 1)
VCE = 1.5 V, VBE = 0,
E-B short circuited
VCB = 1.5 V, IE = 0,
open emitter
10 1) μA
VEB = 0.5 V, IC = 0,
open collector
150
260
450
–
VCE = 1.8 V, IC = 15 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Collector base capacitance 2)
CCB
–
5.23
0.06
–
pF
f = 1 MHz,
f = 1 GHz,
VCB = 1.8 V, VBE = 0,
emitter grounded
Collector emitter capacitance
Emitter base capacitance
CCE
0.5
f = 1 MHz,
VCE = 1.8 V, VBE = 0,
base grounded
CEB
0.73
f = 1 MHz,
VEB = 0.4 V, VCB = 0,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test
Including integrated feedback capacitance
2
Datasheet
5
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
E
C
E
VB
B
Bias-T
(Pin 1)
IN
Figure 2
Testing circuit
AC characteristics, VCE = 1.8 V, f = 450 MHz
Table 6
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
24.5
24.5
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.9
22
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
24
7
Datasheet
6
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 1.8 V, f = 900 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
24
24
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.9
22
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
23.5
8
Table 8
AC characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
23.5
23
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.95
21
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
22.5
6
Table 9
AC characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
22.5
22
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.95
20
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
24
8.5
Datasheet
7
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
21.5
21
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.0
19.5
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
22
6.5
Table 11
AC characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
19.5
19
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.1
17.5
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
22.5
7
Table 12
AC characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
17
15.5
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.2
15
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
19.5
4
Datasheet
8
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
–
–
dB
IC = 15 mA
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
13.5
8.5
Noise figure
IC = 8 mA
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.85
9
Linearity
dBm
IC = 15 mA, ZS = ZL = 50 Ω
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
16
0
Note:
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Datasheet
9
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
22
20
18
16
14
12
10
8
80µA
70µA
60µA
50µA
40µA
30µA
20µA
6
4
10µA
2
0
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 3
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
103
102
10−2
10−1
100
101
102
Ic [mA]
Figure 4
DC current gain hFE = f(IC), VCE = 1.8 V
Datasheet
10
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
102
101
100
10−1
10−2
10−3
10−4
10−5
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 5
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.55
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VBE [V]
Figure 6
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V
Datasheet
11
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
10−6
10−7
10−8
10−9
10−10
10−11
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
VEB [V]
Figure 7
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V
Datasheet
12
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
24
22
20
18
16
14
12
10
8
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
6
4
2
0
0
5
10
15
20
25
30
35
IC [mA]
Figure 8
3rd order intercept point at output OIP3 = f(IC), ZS = ZL = 50 Ω, VCE, f = parameters
35
30
25
17
20
15
10
19
18
18
12
1.6
17
1.8
17
16
15
14
13
16
14
16
15
14
13
1
13
12
1.2
5
1.4
2
VCE [V]
Figure 9
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
Datasheet
13
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
35
30
25
20
15
4
3
2
1
−1
10
5
0
0
0
−1
−1
−2
−3
−4
−5
−6
−2
−3
−4
−5
−6
−2
−3
−4
−5
1
1.2
1.4
1.6
1.8
2
VCE [V]
Figure 10
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz
26
24
22
20
Gma
18
|S21|2
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 11
Gain Gma, IS21I2 = f(f), VCE = 1.8 V, IC = 15 mA
Datasheet
14
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Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
28
26
24
22
20
18
16
14
12
10
8
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70
IC [mA]
Figure 12
Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz
28
26
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
24
22
20
18
16
14
12
10
3.50GHz
5.50GHz
10.00GHz
0
0.5
1
1.5
2
2.5
VCE [V]
Figure 13
Maximum power gain Gmax = f(VCE), IC = 15 mA, f = parameter in GHz
Datasheet
15
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
12.0
11.0
12.0
0.4
10.0
11.0
3
9.0
10.0
0.3
9.0
4
8.0
8.0
0.2
5
7.0
7.0
6.0
5.0
0.03 to 12 GHz
6.0
5.0
0.1
10
4.0
0.1 0.2 0.3 0.4 0.5
3.0
2.0
1
1.0
1.5
2
3
4 5
0
4.0
3.0
−0.1
−10
1.0
2.0
0.03
0.03
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
−1
15mA
Figure 14
Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 8 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.45 to 10 GHz
0.1
10
2.4
1.9
3.5
1
0.9
0.45
0.1 0.2 0.3 0.4 0.5
1.5
0.45
2
3
4 5
0
3.5
5.5
5.5
−0.1
−10
10.0
−0.2
−5
−4
10.0
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
−1
15mA
Figure 15
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 8 / 15 mA
Datasheet
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
1
1.5
12.0
0.5
2
11.0
9.0
12.0
11.0
0.4
10.0
3
10.0
0.3
9.0
4
0.2
5
8.0
7.0
8.0
7.0
0.03 to 12 GHz
0.1
10
6.0
5.0
4.0
3.0
6.0
0.1 0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0
5.0
1.0
2.0
4.0
−0.1
−10
1.0
0.03
3.0
2.0
0.03
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
8mA
−1
15mA
Figure 16
Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 8 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
IC = 15mA
IC = 8mA
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
9
10
f [GHz]
Figure 17
Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 8 / 15 mA
Datasheet
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BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Electrical characteristics
3
f = 10GHz
2.8
f = 5.5GHz
2.6
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
IC [mA]
Figure 18
Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz
4
f = 10GHz
f = 5.5GHz
3.5
3
2.5
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
2
1.5
1
0.5
0
0
5
10
15
20
25
IC [mA]
Figure 19
Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Datasheet
18
v2.0
2018-09-26
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Package information SOT343
4
Package information SOT343
1.25±0.1
A
0.1
0.1 MIN.
0.2
2.1±0.1
A
MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 20
Package outline
Figure 21
Figure 22
Foot print
TYPE CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Marking layout example
4
2
0.2
PIN 1
2.15
1.1
INDEX MARKING
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1
[
]
Figure 23
Tape dimensions
Datasheet
19
v2.0
2018-09-26
BFP843
Robust low noise broadband pre-matched RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-26-09
New datasheet layout.
Datasheet
20
v2.0
2018-09-26
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Edition 2018-09-26
Published by
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