BFR840L3RHESD [INFINEON]
BFR840L3RHESD 是一款分立射频异质结双极晶体管 (HBT)，集成静电放电保护，适用于 5 GHz 频带应用。;
| 型号： | BFR840L3RHESD |
| 厂家： | 
Infineon |
| 描述： | BFR840L3RHESD 是一款分立射频异质结双极晶体管 (HBT)，集成静电放电保护，适用于 5 GHz 频带应用。 射频 晶体管 |
| 文件： | 总22页 (文件大小：464K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Product description
The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an
integrated ESD protection suitable for 5 GHz band applications.
Feature list
•
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
•
High transition frequency fT = 75 GHz to enable best in class noise performance at high frequencies:
NFmin = 0.65 dB at 5.5 GHz; 1.1 dB at 12 GHz, 1.8 V, 5 mA
•
•
•
High gain Gms = 22 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 = 18 dBm at 5.5 GHz, 1.8 V, 10 mA
Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding
collector resistor)
•
Low profile and small form factor leadless package
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS,
BeiDou, Galilleo)
Device information
Table 1
Part information
Product name / Ordering code
Package Pin configuration
Marking Pieces / Reel
15000
BFR840L3RHESD / BFR840L3RHESDE6327XTSA1 TSLP-3-9 1 = B 2 = C 3 = E T8
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
Please read the Important Notice and Warnings at the end of this document
v2.0
www.infineon.com
2018-09-26
BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1
3.2
3.3
3.4
3.5
4
Package information TSLP-3-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Datasheet
2
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at T A = 25 °C (unless otherwise specified)
Parameter
Symbol
Values
Min. Max.
2.25
Unit Note or test condition
Collector emitter voltage
Collector base voltage 1)
Collector emitter voltage 2)
VCEO
–
V
Open base
2.0
2.9
2.6
2.25
2.0
TA = -55 °C, open base
Open emitter
VCBO
TA = -55 °C, open emitter
E-B short circuited
VCES
TA = -55 °C,
E-B short circuited
Base current
IB
-5
–
3
mA
–
Collector current
RF input power
ESD stress pulse
IC
35
20
1.5
PRFin
VESD
–
dBm
kV
-1.5
HBM, all pins, acc. to
JESD22-A114
Total power dissipation 3)
Junction temperature
Storage temperature
Ptot
TJ
–
75
mW TS ≤ 111 °C
°C
–
150
–
TStg
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
VCBO is identical to VCEO due to design.
VCES is similar to VCEO due to design.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
2
3
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Junction - soldering point
RthJS
–
521
–
K/W
–
80
70
60
50
40
30
20
10
0
0
50
100
150
TS [°C]
Figure 1
Total power dissipation Ptot = f(TS)
Datasheet
4
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
V(BR)CEO 2.25 2.6
–
V
IC = 1 mA, IB = 0,
open base
ICES
ICBO
IEBO
hFE
–
–
400 1) nA
400 1)
VCE = 1.5 V, VBE = 0,
E-B short circuited
VCB = 1.5 V, IE = 0,
open emitter
10 1) μA
450
VEB = 0.5 V, IC = 0,
open collector
150
260
VCE = 1.8 V, IC = 10 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Transition frequency
fT
–
75
–
GHz VCE = 1.8 V, IC = 25 mA,
f = 2 GHz
Collector base capacitance
CCB
52
fF
VCB = 1.8 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance
Emitter base capacitance
CCE
0.34
0.34
pF
VCE = 1.8 V, VBE = 0,
f = 1 MHz,
base grounded
CEB
VEB = 0.4 V, VCB = 0,
f = 1 MHz,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test
Datasheet
5
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
3
VC
VB
GND
Bias-T
Bias-T
RF-
Out
RF-
In
Out
In
1
2
TSLP-3-9 testing circuit
Figure 2
Testing circuit
AC characteristics, VCE = 1.8 V, f = 0.45 GHz
Table 6
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
31
27
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.5
27
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
21
4
Table 7
AC characteristics, VCE = 1.8 V, f = 0.9 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
29
26.5
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.55
26
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
18.5
4
Datasheet
6
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 8
AC characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
27
25.5
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.55
24.5
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
17
4
Table 9
AC characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
26.5
25
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.6
24
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
17
4
Table 10
AC characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
25.5
24
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.6
22.5
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
17
4
Datasheet
7
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 11
AC characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
23.5
22
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.6
20
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
18
4
Table 12
AC characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gms
|S21|2
22
19
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.65
16.5
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
18
4
Table 13
AC characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
16
13
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.9
11.5
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
17
3
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 14
AC characteristics, VCE = 1.8 V, f = 12 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
–
–
dB
•
•
Maximum power gain
Transducer gain
Gma
|S21|2
13.5
10
IC = 10 mA
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.1
12
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω, IC = 10 mA
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
17
3
Note:
Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
18
16
14
12
10
8
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
6
4
2
0
0
0.5
1
1.5
2
2.5
3
VCE [V]
Figure 3
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
103
102
10−2
10−1
100
101
102
IC [mA]
Figure 4
DC current gain hFE = f(IC), VCE = 1.8 V
Datasheet
10
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
102
101
100
10−1
10−2
10−3
10−4
10−5
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.6
0.7
0.8
0.9
VB [V]
Figure 6
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10−6
10−7
10−8
10−9
10−10
10−11
0.3
0.4
0.5
0.6
0.7
VEB[ V ]
Figure 7
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
80
70
60
50
40
30
20
10
0
2.00V
1.80V
1.50V
1.00V
0.50V
0
5
10
15
20
25
30
35
40
IC [mA]
Figure 8
Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter
22
20
18
16
14
12
10
8
1.5V, 2400MHz
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
6
4
2
0
0
5
10
15
20
25
30
IC [mA]
Figure 9
3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters
Datasheet
13
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
30
25
20
15
10
5
1
1.2
1.4
1.6
1.8
2
VCE [V]
Figure 10
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
30
−1
25
20
15
10
4
3
3
2
2
0
5
1
1.2
1.4
1.6
1.8
2
VCE [V]
Figure 11
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
0.065
0.06
0.055
0.05
0.045
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VCB [V]
Figure 12
Collector base capacitance CCB = f(VCB), f = 1 MHz
40
36
32
28
Gms
24
20
Gma
16
|S21|2
12
8
4
0
0
2
4
6
8
10
12
f [GHz]
Figure 13
Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 10 mA
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
36
33
30
27
24
21
18
15
12
9
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10.0GHz
12.0GHz
6
0
5
10
15
20
25
30
35
40
45
IC [mA]
Figure 14
Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz
36
33
30
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
27
24
21
18
15
12
9
10.0GHz
12.0GHz
6
0
0.5
1
1.5
2
2.5
V
CE [V]
Figure 15
Maximum power gain Gmax = f(VCE), IC = 10 mA, f = parameter in GHz
Datasheet
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BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
0.4
2
3
0.3
0.2
4
5
12.0
11.0
10.0
9.0
0.07 to 12 GHz
0.1
0
10
12.0
11.0
10.0
0.1 0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
8.0
9.0
0.1
0.1
7.0
8.0
6.0
−0.1
−10
7.0
5.0
−0.2
−5
−4
4.0
6.0
1.0
−3
3.0
4.0
1.0
2.0
−0.3
5.0
2.0
5.0mA
10mA
15mA
−0.4
3.0
−0.5
−2
−1.5
−1
Figure 16
Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
7.0 6.0
5.5
5.5
8.0
5.0
4.0
4
9.0
3.5
2.4
1.8
1.5
0.2
5
10.0
11.0
12.0
3.5
2.4
10.0
0.1
10
5.5
2.4
10.0
0.9
4 5
0.9
12.0
12.0
0.1 0.2 0.3 0.4 0.5
1
1.5
0.9
2
3
0
−0.1
−10
−0.2
−5
−4
−0.3
−3
5mA
−0.4
10mA
15mA
−0.5
−2
−1.5
−1
Figure 17
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
Datasheet
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SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
0.4
2
3
0.3
0.2
4
5
0.07 to 12 GHz
0.1
10
12.0
11.0
10.0
9.0
0.1 0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0
12.0
0.07
11.0
10.0
8.0
7.0
−0.1
−10
9.0
6.0
8.0
5.0
1.0
−0.2
−5
4.0
7.0
1.0
−4
3.0
6.0
2.0
−0.3
5.0
−3
5.0mA
10mA
15mA
2.0
4.0
3.0
−0.4
−0.5
−2
−1.5
−1
Figure 18
Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
IC = 15mA
IC = 10mA
IC = 5.0mA
0.6
0.4
0.2
0
0
2
4
6
8
10
12
f [GHz]
Figure 19
Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA
Datasheet
18
v2.0
2018-09-26
BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
0
0
5
10
15
20
IC [mA]
Figure 20
Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = ZS,opt, f = parameter in GHz
2.6
f = 12GHz
f = 10GHz
2.4
2.2
f = 5.5GHz
2
1.8
1.6
1.4
1.2
1
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
0.8
0.6
0.4
0.2
0
0
5
10
15
20
IC [mA]
Figure 21
Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Datasheet
19
v2.0
2018-09-26
BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Package information TSLP-3-9
4
Package information TSLP-3-9
Topvie w
Bottom view
±0.05
0.6
+0.01
-0.02
1)
0.31
±0.035
0.5
3
2
1
±0.05
0.35
Pin 1
marking
1)
±0.035
2x0.15
TSLP-3-9-PO V01
1) Dimension applies to plated terminal
Figure 22
Package outline (dimension in mm)
Figure 23
Figure 24
Foot print
Marking layout example
Figure 25
Tape dimensions
Note:
See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages .
The marking layout is an example. For the real marking code refer to the device information on the
first page. The number of characters shown in the layout example is not necessarily the real one. The
marking layout can consist of less characters.
Datasheet
20
v2.0
2018-09-26
BFR840L3RHESD
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-09-26
New datasheet layout.
Datasheet
21
v2.0
2018-09-26
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Edition 2018-09-26
Published by
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