BFS483-E6433 [INFINEON]
Transistor;
| 型号： | BFS483-E6433 |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFS483
NPN Silicon RF Transistor
4
5
For low-noise, high-gain broadband amplifier
at collector currents from 2 mA to 28 mA
6
f = 8 GHz
T
F = 1.2 dB at 900 MHz
3
2
Two (galvanic) internal isolated
Transistors in one package
1
VPS05604
C1
6
E2
5
B2
4
TR2
TR1
1
2
3
B1
E1
C2
EHA07196
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFS483
RHs
1=B 2=E 3=C 4=B 5=E 6=C
SOT363
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
12
20
20
2
V
V
V
V
V
CEO
CES
CBO
EBO
65
5
mA
mW
°C
I
C
Base current
I
B
450
Total power dissipation
P
tot
1)
T
40 °C
S
Junction temperature
Ambient temperature
Storage temperature
150
T
j
-65 ... 150
-65 ... 150
T
T
A
stg
Thermal Resistance
2)
K/W
Junction - soldering point
R
245
thJS
1
T is measured on the collector lead at the soldering point to the pcb
S
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFS483
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC characteristics
Collector-emitter breakdown voltage
12
-
-
-
V
V
(BR)CEO
I = 1 mA, I = 0
C
B
Collector-emitter cutoff current
= 20 V, V = 0
-
100 µA
100 nA
I
CES
V
CE
BE
Collector-base cutoff current
= 10 V, I = 0
-
-
-
I
CBO
V
CB
E
Emitter-base cutoff current
= 1 V, I = 0
-
1
µA
-
I
EBO
V
EB
C
DC current gain
I = 15 mA, V = 8 V
50
100
200
h
FE
C
CE
2
Jun-27-2001
BFS483
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC characteristics (verified by random sampling)
Transition frequency
6
-
8
0.4
0.13
1
-
0.6
-
GHz
pF
f
T
I = 25 mA, V = 8 V, f = 500 MHz
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
cb
V
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
-
C
ce
V
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
-
-
C
eb
V
EB
Noise figure
dB
F
I = 5 mA, V = 8 V, Z = Z
,
C
CE
S
Sopt
f = 900 MHz
-
-
1.2
2
-
-
f = 1.8 GHz
1)
-
19
-
Power gain, maximum stable
G
G
ms
I = 15 mA, V = 8 V, Z = Z
, Z = Z
,
,
C
CE
S
Sopt
L
Lopt
f = 900 MHz
2)
-
12.5
-
Power gain, maximum available
ma
I = 15 mA, V = 8 V, Z = Z
, Z = Z
L
C
CE
S
Sopt
Lopt
f = 1.8 GHz
2
Transducer gain
|S
|
21e
I = 15 mA, V = 8 V, Z = Z = 50 ,
C
CE
S
L
f = 900 MHz
-
-
15
-
-
f = 1.8 GHz
9.5
1
G
= |S / S |
21 12
ms
2
2
1/2
G
= |S / S | (k-(k -1) )
21 12
ma
3
Jun-27-2001
BFS483
Total power dissipation P = f (T )
tot
S
500
mW
400
350
300
250
200
150
100
50
0
°C
0
20
40
60
80
100 120
150
T
S
Permissible Pulse Load
Permissible Pulse Load R
= f (t )
thJS
p
P
/P
= f (t )
totmax totDC
p
10 3
10 2
K/W
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
0.5
0.2
0. 1
0.05
0.2
0.2
0.5
0.1
0.005
D = 0
10 1
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
10 0
s
s
t
t
p
p
4
Jun-27-2001
BFS483
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
T C
cb
CB
f = 1MHz
V
= Parameter
CE
1.0
pF
8
GHZ
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
6
5
4
3
2
1
0
8V
5V
3V
2V
1V
0.7V
0.0
0
V
mA
4
8
12
16
22
CB
0
10
20
30
40
50
60
75
V
I
C
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
20
dB
14
dB
8V
16
14
12
10
8
8V
5V
3V
2V
10
8
5V
3V
2V
6
1V
6
4
0.7V
4
1V
2
2
0.7V
0
0
mA
mA
0
10
20
30
40
50
60
75
0
10
20
30
40
50
60
75
I
I
C
C
5
Jun-27-2001
BFS483
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
ma
ms
2
CE
3
C
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
20
30
0.9GHz
0.9GHz
8V
5V
I =15mA
C
dBm
dB
26
16
24
22
20
18
16
14
12
10
8
14
12
10
8
1.8GHz
1.8GHz
3V
2V
6
4
1V
2
0
V
mA
0
1
2
3
4
5
6
7
8
10
0
4
8
12 16 20 24 28 32
38
V
CE
I
C
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
ma
ms
21
V
= Parameter
V
= Parameter
CE
CE
30
32
dB
I =15mA
C
I =15mA
C
28
26
24
22
20
18
16
14
12
10
8
dB
20
15
10
5
8V
8V
1V
1V
6
0.7V
0.7V
4
0
GHz
GHZ
0.0
0.5
1.0
1.5
2.0
2.5
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.5
f
f
6
Jun-27-2001
Package SOT363
Package Outline
±0.2
2
±0.1
0.9
+0.1
6x
0.2
-0.05
0.1 MAX.
0.1
M
0.1
A
6
1
5
4
3
+0.2
acc. to
DIN 6784
2
+0.1
-0.05
0.15
0.65 0.65
M
0.2
A
Foot Print
0.3
0.65
0.65
Marking Layout
Manufacturer
Pin 1
Type code
BCR108S
Example
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
相关型号：
BFS483H6327XTSA1
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-6
INFINEON
©2020 ICPDF网 联系我们和版权申明