BFY193F(ES) [INFINEON]
HiRel Silicon Bipolar Transistor technology;
| 型号： | BFY193F(ES) |
| 厂家： | 
Infineon |
| 描述： | HiRel Silicon Bipolar Transistor technology |
| 文件： | 总6页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFY193F
HiRel NPN Silicon RF Transistor
BFY193F(ES)
4
1
3
2
Features
For low noise, high-gain amplifiers up to 2GHz
For linear broadband amplifiers
Specified 1/f Noise
Hermetically sealed microwave package
fT= 8GHz
F = 1.75 dB at 2 GHz
Product validation
Space Qualified
ESCC Detail Spec. No.: 5611/006
Type Variant No. 09
Description
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Table 1
Type
Product information
Comment
Pin Configuration
Package
1
2
3
4
BFY193F(ES)
BFY193F(P)1
For flight use
Not for flight use1
C
E
B
E
Micro-X1
1 (P) parts have the same fit, form and function as (ES) parts,
no screening acc. to Chart F3 in ESCC Generic Specification No. 5010
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
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IFAG PSS RFS D2 HIR
Issue 1, January 2022
HiRel NPN Silicon RF Transistor
BFY193F(ES)
Table of contents
Table of contents
Features ....................................................................................................................................... 1
Product validation.......................................................................................................................... 1
Description .................................................................................................................................... 1
Table of contents............................................................................................................................ 2
1
2
3
4
Maximum ratings ................................................................................................................... 3
Thermal characteristics .......................................................................................................... 4
Electrical characteristics......................................................................................................... 5
Package outlines.................................................................................................................... 6
Datasheet
2 of 6
Issue 1, January 2022
HiRel NPN Silicon RF Transistor
BFY193F(ES)
Maximum ratings
1
Maximum ratings
Table 2
Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
VCEO
VCES
VCBO
VEBO
IC
-
-
-
-
-
-
-
-
-
-
-
12
V
-
20
V
VBE=0
-
20
V
-
2
V
-
80
mA
mA
Base current 1
IB
-
10
Total power dissipation 2
Junction temperature
Operating temperature
Storage temperature
Ptot
Tj
-
580
200
200
200
mW TS ≤ 104 °C
-
°C
°C
°C
Top
Tstg
-65
-65
1 The maximum permissible base current for VFBE measurements is 30mA (spot-measurement duration < 1s)
2 For TS > 104 °C derating is required. TS is measured on the collector lead at the soldering point to the PCB
Datasheet
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Issue 1, January 2022
HiRel NPN Silicon RF Transistor
BFY193F(ES)
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal characteristics
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
TS is measured on the
K/W collector lead at the
soldering point to the PCB
Thermal resistance,
junction –soldering point
Rth,JS
-
-
165
Duration 5 seconds
maximum at a distance of not
less than 0.5mm from the
device body and the same
Soldering Temperature
Tsol
-
-
250
°C
lead shall not be resoldered
until 3 minutes have elapsed.
Datasheet
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Issue 1, January 2022
HiRel NPN Silicon RF Transistor
BFY193F(ES)
Electrical characteristics
3
Electrical characteristics
at TA=25°C, unless otherwise specified
Table 4
Static characteristics
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Collector-base cutoff current
Collector-emitter cutoff current 1
Collector-base cutoff current
Emitter base cuttoff current
Emitter base cuttoff current
Base-Emitter forward voltage
DC current gain
ICBO
ICEX
ICBO
IEBO
IEBO
VFBE
hFE
-
-
-
-
-
-
-
100
600
50
µA VCB = 20V, IE = 0A
µA
-
VCE = 12V, IB = 0.5µA
nA
µA
µA
V
-
VCB = 10V, IE = 0A
VEB = 2V, IC = 0A
VEB = 1V, IC = 0A
IE = 30mA, IC = 0A
IC = 30mA, VCE = 8V
-
25
-
0.5
1
-
50
100 175
-
Table 5
Dynamic characteristics
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
6.5
-
7.5
8
-
-
IC= 40mA, VCE= 5V, f= 500MHz
GHz
Transition frequency
fT
IC= 50mA, VCE= 8V, f = 500MHz
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
CCB
CCE
CEB
-
-
-
0.56 0.75 pF
VCB= 10V, VBE= vbe= 0, f= 1MHz
VCE= 10V, VBE= vbe= 0, f= 1MHz
VEB=0.5V, VCB= vcb= 0, f= 1MHz
0.34
-
-
pF
pF
2.7
IC= 15mA, VCE= 5V, f = 2GHz,
ZS = ZSopt
Noise Figure
F
-
1.75 2.2
dB
IC= 40mA, VCE= 5V, f = 2GHz,
ZS = ZSopt, ZL = ZLopt
Power Gain 2
Transducer gain
Output power
Gma
12.5 13.5
-
-
-
dB
IC= 40mA, VCE= 5V, f = 2GHz,
ZS = ZL = 50Ω
2
|S21e
|
8
9
dB
IC= 50mA, VCE= 5V, f = 2GHz,
PIN= 10dBm, ZS = ZL = 50Ω
POUT
16.5 17.5
dBm
1 This test assures V(BR)CE0 > 12V
S21
S21
(k k2 1) , G
2
Gma
ms
S12
S12
Datasheet
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Issue 1, January 2022
HiRel NPN Silicon RF Transistor
BFY193F(ES)
Package outlines
4
Package outlines
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 1, January 2022
Published by
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
© 2022 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
applications.
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used in life-support devices or systems with the
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of
Infineon
Email: erratum@infineon.com
Technologies, if a failure of such components can
reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety
or effectiveness of that device or system.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
Life support devices or systems are intended to be
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they fail, it is reasonable to assume that the health of
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Datasheet
6 of 6
Issue 1, January 2022
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