BFY650B-12(ES) [INFINEON]

HiRel Silicon Bipolar Transistor technology;


型号：	BFY650B-12(ES)
厂家：	Infineon
描述：	HiRel Silicon Bipolar Transistor technology
文件：	总6页 (文件大小：388K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BFY650B-12

HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Features

 For high power amplifiers

 Ideal for low phase noise oscilators

 Maximum available gain: G_ma= 18 dB at 1.8 GHz

Noise figure F = 0.8 dB at 1.8 GHz

 Hermetically sealed microwave package

Product validation



Space Qualified

ESCC Detail Spec. No.: 5611/010

Type Variant No. 05

Description

ESD: Electrostatic discharge sensitive device,

observe handling precautions!

Table 1

Type

Product information

Comment

Pin Configuration

Package

BFY650B-12(ES)

BFY650B-12(P)¹

For flight use

Not for flight use¹

Micro-X

¹(P) parts have the same fit, form and function as (ES) parts,

no screening acc. to Chart F3 in ESCC Generic Specification No. 5010

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

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IFAG PSS RFS D2 HIR

Issue 3, January 2022

HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Table of contents

Features ....................................................................................................................................... 1

Product validation.......................................................................................................................... 1

Description .................................................................................................................................... 1

Table of contents............................................................................................................................ 2

Maximum ratings ................................................................................................................... 3

Thermal characteristics .......................................................................................................... 4

Electrical characteristics......................................................................................................... 5

Package outlines.................................................................................................................... 6

Datasheet

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Issue 3, January 2022

HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Maximum ratings

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

3.7

T_A> 0 °C

T_A≤ 0 °C

Collector-emitter voltage

V_CEO

Collector-base voltage

Emitter-base voltage

Collector current

V_CBO

V_EBO

I_C

1.2

150

Base current ¹

I_B

Total power dissipation ²

Junction temperature

Operating temperature

Storage temperature

P_tot

T_j

600

175

mW T_S≤ 76 °C

°C

T_op

T_stg

-65

¹Maximum ratings must not be exceeded under any combination of DC ratings and RF voltage/current swings except as specified in §3

²For T_S> 76 °C derating is required. T_Sis measured on the collector lead at the soldering point to the PCB

Datasheet

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Issue 3, January 2022

HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Thermal characteristics

Table 3

Thermal characteristics

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

T_Sis measured on the

K/W collector lead at the

soldering point to the PCB

Thermal resistance,

junction –soldering point

R_th,JS

165

Duration 5 seconds

maximum at a distance of not

less than 0.5mm from the

device body and the same

Soldering Temperature

T_sol

250

°C

lead shall not be resoldered

until 3 minutes have elapsed.

Datasheet

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HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Electrical characteristics

at T_A=25°C, unless otherwise specified

Table 4

Static characteristics

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Collector emitter leakage current

I_CES

µA V_CEB= 13V, E-B short circuited

V_CEB= 10.5V, E-B short

µA

circuited

Collector emitter leakage current

Collector-emitter cutoff current ¹

Emitter base cuttoff current

DC current gain

I_CES

I_CEX

I_EBO

h_FE

µA V_CEB= 5V, E-B short circuited

µA

160

V_CE= 4V, I_B= 0.1µA

µA

V_EB= 1.2V, I_C= 0A

I_C= 80mA, V_CE= 3V

100 190 250

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Collector-base capacitance

Collector-emitter capacitance

Emitter-base capacitance

C_CB

C_CE

C_EB

0.26 0.36 pF

V_CB= 2V, V_BE= vbe= 0, f= 1MHz

0.57 0.8

V_CE= 2V, V_BE= vbe= 0, f= 1MHz

V_EB=0.5V, V_CB= vcb= 0, f= 1MHz

1.4

0.8

1.8

I_C= 10mA, V_CE= 3V, f = 1.8GHz,

Z_S= Z_Sopt

I_C= 10mA, V_CE= 3V, f = 6.0GHz,

Z_S= Z_Sopt

I_C= 80mA, V_CE= 3V, f = 1.8GHz,

Z_S= Z_L= 50Ω

I_C= 80mA, V_CE= 3V, f = 6.0GHz,

Z_S= Z_L= 50Ω

Noise Figure

1.25

14.5 18

Insertion power gain

|S_21e|

5.5

7.3

I_C= 80mA, V_CE= 3V, f = 1.8GHz,

Z_S= Z_Sopt, Z_L= Z_Lopt

Power Gain ²

Output Power

G_ms

G_ma

19.2

9.3

I_C= 80mA, V_CE= 3V, f = 6.0GHz,

Z_S= Z_Sopt, Z_L= Z_Lopt

I_C= 80mA, V_CE= 3V, f = 1.8GHz,

P_in= 0dBm

Pout

dBm

¹This test assures V_(BR)CE0> 4V

S21

(k  k²1) _,G 

G_ma



S12

Datasheet

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HiRel NPN Silicon RF Transistor

BFY650B-12(ES)

Package outlines

Trademarks

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

Edition 3, January 2022

Published by

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

Infineon Technologies AG

81726 München, Germany

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement of

intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon

Technologies office.

Do you have a question about this

document?

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and standards

concerning customer’s products and any use of the

product of Infineon Technologies in customer’s

applications.

Infineon Technologies Components may only be

used in life-support devices or systems with the

expressed

written

approval

Infineon

Email: erratum@infineon.com

Technologies, if a failure of such components can

reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety

or effectiveness of that device or system.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.

Life support devices or systems are intended to be

implanted in the human body, or to support and/or

maintain and sustain and/or protect human life. If

they fail, it is reasonable to assume that the health of

the user or other persons may be endangered.

Datasheet

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Issue 3, January 2022

BFY650B-12(ES) [INFINEON]

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