BGA420H6327 [INFINEON]
RF/Microwave Amplifier, 1 Func, BIPolar;
| 型号： | BGA420H6327 |
| 厂家： | 
Infineon |
| 描述： | RF/Microwave Amplifier, 1 Func, BIPolar |
| 文件： | 总8页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA420
in SIEGET 25-Technologie
• Cascadable 50 Ω-gain block
• Unconditionally stable
3
2
1
4
2
• Gain |S | = 13 dB at 1.8 GHz
21
IP
= +13 dBm at 1.8 GHz
3out
(V = 3 V, I = typ. 6.7 mA)
D
D
• Noise figure NF = 2.3 dB at 1.8 GHz
• Reverse isolation > 28 dB and
VD
4
return loss IN / OUT > 12 dB at 1.8 GHz
• Pb-free (RoHS compliant) package
3
OUT
1)
Circuit Diagram
1
IN
2
GND
EHA07385
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BGA420
Marking
BLs
Pin Configuration
2, GND 3, OUT 4, VD
Package
SOT343
1, IN
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
Symbol
I
D
Value
15
6
90
Unit
mA
V
V
P
D
mW
tot
T = 110 °C
S
0
150
dBm
°C
RF input power
P
RFin
Junction temperature
Ambient temperature
Storage temperature
T
j
T
-65 ... 150
-65 ... 150
A
T
stg
Thermal Resistance
Junction - soldering point
2)
K/W
R
≤ 410
thJS
1Pb-containing package may be available upon special request
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-07-12
1
BGA420
Electrical Characteristics at T = 25 °C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC characteristics V = 3 V, Z = 50 Ω
D
o
5.4
6.7
8
mA
dB
Device current
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1 GHz
1dB compression point
f = 1 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
I
D
|S |
2
21
17
15
11
25
19
17
13
28
-
-
-
-
S12
NF
-
-
-
1.9
2.2
2.3
13
2.3
2.6
2.7
-
10
dBm
dB
IP
3out
-6
8
-2.5
11
-
-
-
P
-1dB
RL
RL
in
12
16
out
Typical biasing configuration
+VD
100 pF
RF OUT
100 pF
10 nF
4
3
BGA 420
1
2
100 pF
GND
RF IN
EHA07386
Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device
to provide a low impedance path.
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
boards are recommended to minimize the parasitic inductance to ground.
2007-07-12
2
BGA420
Typical S-Parameters at T = 25 °C
A
f
S
S
S
S
11
21
12
22
GHz MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
V = 3 V, Z = 50 Ω
D
0.1
0.5
0.8
1
o
0.5686
0.5066
0.4404
0.3904
0.2841
0.2343
0.2136
0.2062
0.1688
0.1558
-8.5
-19.2
-28.7
-34.6
-50.5
-60.6
-64.1
-68.4
-89.7
-104.9
9.314
8.393
7.352
6.69
5.244
4.567
4.355
4.165
3.417
2.861
170.6
149.4
135.2
126.8
111.1
104
0.0268
0.0248
0.0236
0.024
0.0314
0.0378
0.0406
0.0426
0.0549
0.0682
12.7
11.7
25.6
35.9
57.2
63.5
66.1
67.2
71.4
73.1
0.2808
0.2613
0.2361
0.2144
0.1398
0.0979
0.0838
0.0689
0.0224
0.0284
-8.6
-3.8
-6.7
-9
-15
1.5
1.8
1.9
2
2.4
3
-18.2
-21.5
-22.2
-48
102
99.7
91.7
85.3
-147.5
Spice-model BGA 420
+V
BGA 420-chip
T1
T501
including parasitics
14
R
R
R
C
C
C
C
C
14.5kΩ
140Ω
2.4kΩ
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
1
2
R2
13
3
OUT
R1
R3
1
P1
P2
P3
P4
C1
11
CP3
CP4
IN
T1
CP1
CP2
12
GND
EHA07387
2007-07-12
3
BGA420
Transistor Chip Data T1 (Berkley-SPICE 2G.6 Syntax) :
83.23
0.16493
10.526
0.25052
15
1.9289
0.70367
0.3641
0
1.0405
15.761
0.96647
IS =
VAF =
NE =
0.21024
39.251
fA
V
BF =
-
A
NF =
-
fA
IKF =
BR =
IKR =
RB =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.7763
34.368
1.3152
1.3491
3.7265
4.5899
1.3364
0.99532
1.4935
0
-
V
-
A
-
0.037223 fA
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
0.21215
0.12691
0.37747
0.19762
96.941
0.08161
0.75
A
-
Ω
Ω
RE =
Ω
fF
ps
mA
V
V
-
deg
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
-
V
fF
0.48652
0
0
-
fF
-
ns
V
eV
K
1.11
300
MJS =
XTI =
-
-
-
-
3
0.99469
C'-E'-Diode Data (Berkley-SPICE 2G.6 Syntax) :
fA
2
RS =
20
Ω
IS =
N =
1.02
-
All parameters are ready to use, no scaling is necessary
Package Equivalent Circuit:
0.36
0.4
nH
nH
nH
nH
nH
L =
BI
L 2
L
=
+V
BO
0.3
L =
C1
C3
L 1
EI
CCB
0.15
L
=
EO
C2
0.36
14
L =
CI
0.4
95
6
nH
L
=
L BO
L BI
L CI
L CO
CO
11
BGA 420
Chip
13
IN
OUT
fF
C
C
C
=
=
=
BE
CB
CE
1
2
fF
C’-E’-
Diode
12
132
28
88
8
fF
CBE
CCE
C =
fF
C =
fF
L EI
C =
fF
3
L =
0.6
0.4
nH
nH
1
L EO
GND
L =
EHA07388
Valid up to 3GHz
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM or see Internet:
http://www.infineon.com/silicondiscretes
2007-07-12
4
BGA420
2
2
Insertion power gain |S | = f (f)
Insertion power gain |S | = f (f)
21
21
V = 3 V
D
V , I = parameter
T = parameter
D
D
A
25
22
dB
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3,4mA
TA=-20°C
TA=+25°C
TA=+75°C
dB
18
16
14
12
10
8
15
10
5
6
4
2
0
10 -1
0
10 -1
10 0
10 1
10 0
10 1
GHz
GHz
f
f
Noise figure NF = f (f)
Noise figure NF = f (f)
V = 3V
D
V ,I = parameter
T = parameter
D D
A
5
3.5
dB
TA=+75°C
TA=+25°C
TA=-20°C
dB
VD=5V, ID=12.4mA
VD=3V, ID=6.4mA
2.5
2
3
2
1
0
1.5
1
0.5
0
10 -1
10 -1
10 0
10 1
10 0
10 1
GHz
GHz
f
f
2007-07-12
5
BGA420
Intercept point at the output
IP = f (f)
Intercept point at the output
IP = f (f), V = 3V
3out
3out
D
V ,I = parameter
T = parameter
D D
A
20
12
dBm
VD=5V, ID=12.4mA
VD=4V, ID=9.4mA
VD=3V, ID=6.4mA
VD=2V, ID=3.4mA
dBm
10
9
8
7
6
5
4
3
2
1
16
14
12
10
8
TA=-20°C
TA=+25°C
TA=75°C
6
4
2
0
10 -1
0
10 -1
10 0
GHz
10 1
10 0
10 1
GHz
f
f
2007-07-12
6
Package SOT343
BGA420
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2007-07-12
7
BGA420
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-07-12
8
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