BGA725L6 [INFINEON]
BGA725L6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为 1550 Mhz 到 1615 Mhz，比如 GPS、格洛纳斯、北斗、伽利略和其他导航卫星系统。在应用配置中，LNA 在 3.6 mA 的电流消耗下提供 20.0 dB 增益和 0.65 dB 噪声系数。BGA725L6 基于英飞凌科技 ‘B7HF 硅锗技术。它采用 1.5 V 至 3.6 V 电源供电;
| 型号： | BGA725L6 |
| 厂家： | 
Infineon |
| 描述： | BGA725L6 是先进的低噪声放大器，适用于全球导航卫星系统 (GNSS)，适用频率为 1550 Mhz 到 1615 Mhz，比如 GPS、格洛纳斯、北斗、伽利略和其他导航卫星系统。在应用配置中，LNA 在 3.6 mA 的电流消耗下提供 20.0 dB 增益和 0.65 dB 噪声系数。BGA725L6 基于英飞凌科技 ‘B7HF 硅锗技术。它采用 1.5 V 至 3.6 V 电源供电 放大器 全球定位系统 |
| 文件： | 总16页 (文件大小：1448K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA725L6
Silicon Germanium Low Noise Amplifier
for Global Navigation Satellite Systems (GNSS)
in ultra small package with 0.77mm² footprint
Data Sheet
Revision 2.0, 2012-03-09
Preliminary
RF & Protection Devices
Edition 2012-03-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGA725L6
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 2.0, 2012-03-09
all
“Target” status changed to “Preliminary”
7
Marking code changed: C
7, 10, 11
Electrical Characteristics adjusted
Revision 1.0, 2011-07-05
all
Initial version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANI ZATION FOR STANDARDIZATION. MATLAB™
of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Preliminary Data Sheet
3
Revision 2.0, 2012-03-09
BGA725L6
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
1
2
3
4
Preliminary Data Sheet
4
Revision 2.0, 2012-03-09
BGA725L6
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Application Schematic BGA725L6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Drawing of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Application Board Cross-Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TSLP-6-2 Package Outline (top, side and bottom views). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Footprint TSLP-6-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000) . . . . . . . . . . . . . . . . . . . . . . 15
Preliminary Data Sheet
5
Revision 2.0, 2012-03-09
BGA725L6
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Electrical Characteristics: TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Electrical Characteristics: TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Table 5
Table 6
Preliminary Data Sheet
6
Revision 2.0, 2012-03-09
Silicon Germanium Low Noise Amplifier
BGA725L6
for Global Navigation Satellite Systems (GNSS)
in ultra small package with 0.77mm² footprint
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
High insertion power gain: 20.0 dB
Out-of-band input 3rd order intercept point: -2 dBm
Input 1 dB compression point: -15 dBm
Low noise figure: 0.65 dB
Low current consumption: 3.6 mA
Operating frequencies: 1550 - 1615 MHz
Supply voltage: 1.5 V to 3.6 V
Digital on/off switch (1V logic high level)
Ultra small TSLP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B7HF Silicon Germanium technology
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
Application
•
Ideal for all Global Navigation Satellite Systems (GNSS) like GPS, GLONASS, Beidou, Galileo and others.
VCC PON
AI
AO
ESD
GND
GNDRF
BGA725L6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
TSLP-6-2
BGA725L6
D
Preliminary Data Sheet
7
Revision 2.0, 2012-03-09
BGA725L6
Features
Description
The BGA725L6 is a front-end low noise amplifier for Global Navigation Satellite Systems (GNSS) from 1550 MHz
to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise
figure at a current consumption of 3.6 mA in the application configuration described in Chapter 3. The BGA725L6
is based upon Infineon Technologies‘ B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply
voltage.
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
GND
VCC
AO
Function
1
2
3
4
5
6
General ground
DC supply
LNA output
GNDRF
AI
LNA RF ground
LNA input
PON
Power on control
Preliminary Data Sheet
8
Revision 2.0, 2012-03-09
BGA725L6
Maximum Ratings
1
Maximum Ratings
Table 2
Maximum Ratings
Symbol
Parameter
Values
Typ.
Unit
Note /
Test Condition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
–
Max.
3.6
1)
Voltage at pin VCC
Voltage at pin AI
VCC
VAI
–
–
–
–
–
–
–
–
V
0.9
V
–
–
–
–
–
–
–
Voltage at pin AO
Voltage at pin PON
Voltage at pin GNDRF
Current into pin VCC
RF input power
VAO
VPON
VGNDRF
ICC
V
V
CC + 0.3
CC + 0.3
V
V
0.3
20
0
V
mA
dBm
mW
PIN
–
Total power dissipation,
TS < 123 °C2)
Ptot
–
72
Junction temperature
TJ
–
–
–
–
–
150
85
°C
°C
°C
V
–
–
–
Ambient temperature range
Storage temperature range
ESD capability all pins
TA
-40
-65
–
TSTG
VESD_HBM
150
2000
according to
JESD22A-114
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Thermal Resistance
Table 3
Thermal Resistance
Parameter
Symbol
Value
Unit
Junction - soldering point1)
RthJS
380
K/W
1) For calculation of RthJA please refer to Application Note Thermal Resistance
Preliminary Data Sheet
9
Revision 2.0, 2012-03-09
BGA725L6
Electrical Characteristics
2
Electrical Characteristics
Table 4
Electrical Characteristics:1) TA = 25 °C, VCC = 1.8 V, VPON,ON = 1.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
1.5
–
Max.
3.6
–
Supply voltage
Supply current
VCC
ICC
V
–
3.6
0.2
–
mA
μA
V
ON-mode
–
3
OFF-mode
Power On voltage
Power On current
Vpon
Ipon
1.0
0
Vcc
0.4
–
ON-mode
–
V
OFF-mode
–
5
μA
μA
dB
dB
dB
dB
dB
μs
μs
dBm
ON-mode
–
–
1
OFF-mode
Insertion power gain
Noise figure2)
|S21|2
NF
–
20.0
0.65
14
–
–
–
–
ZS = 50 Ω
Input return loss
RLin
RLout
1/|S12|2
tS
–
–
–
Output return loss
Reverse isolation
Power gain settling time3)
–
20
–
–
–
37
–
–
–
5
–
OFF- to ON-mode
ON- to OFF-mode
–
–
5
–
Inband input 1dB-compression IP1dB
–
-16
–
point
Inband input 3rd-order intercept IIP3
–
–
–
-6
–
–
–
dBm
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
point4)
Out-of-band input 3rd-order
intercept point5)
IIP3oob
k
-5
f1 = 1712.7 MHz
f2 = 1850 MHz
Stability
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in chapter 3
2) PCB losses are subtracted
3) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
4) Input power = -30 dBm for each tone
5) Input power = -20 dBm for each tone
Preliminary Data Sheet
10
Revision 2.0, 2012-03-09
BGA725L6
Electrical Characteristics
Table 5
Electrical Characteristics:1) TA = 25 °C, VCC = 2.8 V, VPON,ON = 2.8 V, VPON,OFF = 0 V,
f = 1550 - 1615 MHz (GPS / Glonass / Beidou / Galileo)
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
1.5
–
Max.
3.6
–
Supply voltage
Supply current
VCC
ICC
V
–
3.6
0.2
–
mA
μA
V
ON-mode
–
3
OFF-mode
Power On voltage
Power On current
Vpon
Ipon
1.0
0
Vcc
0.4
–
ON-mode
–
V
OFF-mode
–
5
μA
μA
dB
dB
dB
dB
dB
μs
μs
dBm
ON-mode
–
–
1
OFF-mode
Insertion power gain
Noise figure2)
|S21|2
NF
–
20.0
0.65
14
–
–
–
–
ZS = 50 Ω
Input return loss
RLin
RLout
1/|S12|2
tS
–
–
–
Output return loss
Reverse isolation
Power gain settling time3)
–
20
–
–
–
37
–
–
–
5
–
OFF- to ON-mode
ON- to OFF-mode
–
–
5
–
Inband input 1dB-compression IP1dB
–
-15
–
point
Inband input 3rd-order intercept IIP3
–
–
–
-5
–
–
–
dBm
dBm
f1 = 1575 MHz
f2 = f1 +/-1 MHz
point4)
Out-of-band input 3rd-order
intercept point5)
IIP3oob
k
-2
f1 = 1712.7 MHz
f2 = 1850 MHz
Stability
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in chapter 3
2) PCB losses are subtracted
3) To be within 1 dB of the final gain OFF- to ON-mode; to be within 3 dB of the final gain ON- to OFF-mode
4) Input power = -30 dBm for each tone
5) Input power = -20 dBm for each tone
Preliminary Data Sheet
11
Revision 2.0, 2012-03-09
BGA725L6
Application Information
3
Application Information
Application Board Configuration
N1 BGA725L6
GNDRF, 4
AO, 3
VCC, 2
GND, 1
RFout
C1
L1
(optional)
RFin
AI, 5
VCC
C2
(optional)
PON
PON, 6
BGA725L6_Schematic.vsd
Figure 2
Application Schematic BGA725L6
Bill of Materials
Table 6
Name
Value
Package
0402
Manufacturer
Various
Function
C1 (optional) 1nF
DC block 1)
RF bypass 3)
Input matching
SiGe LNA
C2 (optional) > 10nF2)
0402
Various
L1
7.5nH
0402
Murata LQW type
Infineon
N1
BGA725L6
TSLP-6-2
1) DC block might be realized with pre-filter in GNSS applications
2) For data sheet characteristics 1μF used
3) RF bypass recommended to mitigate power supply noise
A list of all application notes is available at http://www.infineon.com/gpslna.appnotes.
Preliminary Data Sheet
12
Revision 2.0, 2012-03-09
BGA725L6
Application Information
BGA725L6_Application_Board.vsd
Figure 3
Drawing of Application Board
Vias
Vias
Ro4003, 0.2mm
FR4,0.8mm
Copper
35µm
BGA725L6_application_board_sideview.vsd
Figure 4
Application Board Cross-Section
Preliminary Data Sheet
13
Revision 2.0, 2012-03-09
BGA725L6
Package Information
4
Package Information
Top view
Bottom view
0.05
0.7
+0.01
-0.0ꢀ
0.ꢀ9
0.05 MAX.
1)
0.0ꢀ5
0.2
(0.05)
(0.05)
ꢀ
2
1
4
5
6
0.05
0.2
Pin 1 marking
1) Dimension applies to plated terminals
TSLP-6-2-PO V01
Figure 5
TSLP-6-2 Package Outline (top, side and bottom views)
NSMD
0.4
0.4
0.25
0.25
(stencil thickness 100 µm)
Stencil apertures
Copper
Solder mask
TSLP-6-2-FP V01
Figure 6
Footprint TSLP-6-2
Type code
D
Pin 1 marking
TSLP-6-2-MK BGA 725
Figure 7
Marking Layout (top view)
Preliminary Data Sheet
14
Revision 2.0, 2012-03-09
BGA725L6
Package Information
0.5
2
Pin 1
marking
0.85
TSLP-6-2-TP V01
Figure 8
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
Preliminary Data Sheet
15
Revision 2.0, 2012-03-09
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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