BGF113 概述
Differential Microphone Filter and ESD Protection 差分麦克风滤波器和ESD保护 瞬态抑制器
BGF113 规格参数
是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | ROHS COMPLIANT PACKAGE-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.83 | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | S-PBGA-B8 | 元件数量: | 1 |
端子数量: | 8 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | GRID ARRAY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | UNIDIRECTIONAL |
认证状态: | Not Qualified | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | BALL |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
BGF113 数据手册
通过下载BGF113数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Data Sheet, V3.1, January 2009
BGF113
Differential Microphone Filter and ESD Protection
Small Signal Discretes
Edition 2009-01-29
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Revision History: 2009-01-29, V3.1
Previous Version: 2008-09-24, V3.0
Page
6
Subjects (major changes since last revision)
Figure 2 and Figure 3 updated
Data Sheet
3
V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
BGF113
Features
•
•
Differential microphone filter
Integrated ESD protection up to 15 kV contact discharge according to
IEC61000-4-2
•
•
•
•
More than 40 dB stopband attenuation at 1 GHz
Wafer Level Package with SnAgCu solder balls
RoHS and WEEE compliant package
400 µm solder ball pitch
WLP-8-6-3D
Description
BGF113 is a differential microphone filter with low pass characteristic offering a high stop band attenuation up to
6 GHz. External pins are protected against 15 kV contact discharge according to IEC61000-4-2. The wafer level
package is a green leadfree package with a size of 1.16 mm x 1.16 mm and a total height of 0.60 mm.
Type
Package
Marking
Chip
BGF113
WLP-8-6
GF113
N0728
A2
A3
R1
2 kΩ
External IOs
B1
R5
25 Ω
B3
R3
2.2 kΩ
C3
C1
D1
800pF
1250pF
B2 (GND)
C2 (GND)
C2
R2
C4
D2
800pF
1 kΩ
1250pF
C1
C3
R4
2.2 kΩ
Figure 1
Schematic
Data Sheet
4
V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Table 1
Maximum Ratings
Parameter
Symbol
Values
Typ.
–
–
–
–
Unit
Note /
Test Condition
Min.
0
-40
-65
–
Max.
4
85
150
60
Voltage at all pins to GND
Operating temperature range
Storage temperature range
Input power at all pins
VP
V
–
–
–
TOP
TSTG
PIN
°C
°C
mW
@ +70 °C
Electrostatic Discharge According to IEC61000-4-2
Contact discharge from pin B1 or C1 to GND VEXT
-15
-2
–
–
15
2
kV
kV
–
–
Contact discharge between all other pins
VINT
Table 2
Electrical Characteristics1)
Parameter
Symbol
Values
Typ.
Unit
Note /
Test Condition
Min.
Max.
Resistor R1
Resistor R2
Resistors R3, R4
Resistors R5
Capacitors C1, C2
Capacitors C3, C4
R1
R2
R3,4
R5
C1,2
C3,4
IR
1900 2000 2100
800 1000 1200
1760 2200 2640
Ω
–
–
–
–
–
–
Ω
Ω
20
25
30
Ω
640
800
960
pF
1000 1250 1500 pF
Leakage currents
–
0.1
0.1
100
100
nA
µA
dB
V = 3 V
ESD diodes to GND
V = 14 V
Insertion loss2)
IL
20
f = 0.1 ... 6 GHz
Pins B1 to B3 or C1 to C3
1) at TA = 25 °C
ZS = ZL = 50 Ω
2) Insertion loss (see also Figure 2) strongly depends upon source and load impedance and GND connection on the circuit
board. For RF test purposes a 50 Ω environment is used.
Data Sheet
5
V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
BGF113 insertion loss
0
-10
-20
-30
-40
-50
-60
-70
-80
0.1
1
10
100
1000
10000
MHz
Figure 2
Insertion loss B1 - B3 or C1 - C3, ZS = ZL = 50 Ω
BGF113 cross talk
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
-120
0.1
1
10
100
1000
10000
MHz
Figure 3
Cross talk B1 - C3 or C1 - B3, ZS = ZL = 50 Ω
Data Sheet
6
V3.1, 2009-01-29
BGF113
Differential Microphone Filter and ESD Protection
BGF113
Package outlines
Solder balls face down
Solder balls face up
0.0ꢀ
0.0ꢀ
1.16
0.6
B
0.4
0.0ꢀ
0.2
STANDOFF
0.1
C
0.0ꢀ
0.0ꢀ
(0.18
)
(0.18
)
Pin A1
Corner Index Area 2)
A
A3
B3
A2
B2
B1
C1
C3
C2
C
2 x 0.4 = 0.8
8x
1)
0.08
C
0.04
0.2ꢀ
M
ø0.0ꢀ
A B
8x
COPLANARITY
1) Dimension is measured at the maximum solder ball diameter, parallel to primary datum C
2) A1 corner identified by marking
3) Primary datum C and seating plane are defined by the domed crowns of the balls
WLP-8-6-N-PO V01
Figure 4
WLP-8-6 (dimensions in mm)
Tape and reel specification
0.2ꢀ
4
1.33
0.7ꢀ
Pin 1
Corner Index Area
WLP-8-6-TP V01
Figure 5
Tape for WLP-8-6 (dimensions in mm)
You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”:
http://www.infineon.com/products.
Data Sheet
7
V3.1, 2009-01-29
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