BGT24MTR12 [INFINEON]
The BGT24MTR12 is a silicon germanium MMIC for signal generation and reception, operating from 24.00 to 26.00GHz. It is based on a 24GHz fundamental voltage controlled oscillator. A switchable frequency prescaler is included with output frequencies of 1.5GHz and 23kHz. The main RF output delivers up to 8 dBm signal power to feed an antenna. A RC polyphase filter (PPF) is used for LO quadrature phase generation of the homodyne quadrature downconversion mixer. Output power sensors as well as a temperature sensor are implemented for monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18μm SiGe:C technology offering a cutoff frequency of 200GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant VQFN package.;
| 型号： | BGT24MTR12 |
| 厂家： | 
Infineon |
| 描述： | The BGT24MTR12 is a silicon germanium MMIC for signal generation and reception, operating from 24.00 to 26.00GHz. It is based on a 24GHz fundamental voltage controlled oscillator. A switchable frequency prescaler is included with output frequencies of 1.5GHz and 23kHz. The main RF output delivers up to 8 dBm signal power to feed an antenna. A RC polyphase filter (PPF) is used for LO quadrature phase generation of the homodyne quadrature downconversion mixer. Output power sensors as well as a temperature sensor are implemented for monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18μm SiGe:C technology offering a cutoff frequency of 200GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant VQFN package. |
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| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Data Sheet
Revision 3.2, 2014-07-15
RF & Protection Devices
Edition 2014-07-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC
Revision History: 2014-07-15, Revision 3.2
Previous Revision: 2014-03-25, Revision 3.1
Page
Subjects (major changes since last revision)
update recommended footprint drawing (change of ground plains)
24
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™,
EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™,
PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™,
SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2011-02-24
Data Sheet
3
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
1
2
2.1
2.2
2.3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Power Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
RX Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Temperature Sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power Detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2.4
2.4.1
2.4.2
2.4.3
2.5
2.6
3
Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.1
3.2
3.3
3.4
3.5
4
Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.1
4.2
4.3
Data Sheet
4
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
BGT24MTR12 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Application Circuit with Chip Outline (Top View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Timing Diagram of the SPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Cross-Section View of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5) 21
Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Equivalent Circuit Diagram of MMIC Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Recommended Footprint and Stencil Layout for the VQFN32-9 Package . . . . . . . . . . . . . . . . . . . 24
Reflow Profile for BGT24MTR12 (VQFN32-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 10 Package Outline (Top, Side and Bottom View) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 11 Marking Layout VQFN32-9. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 12 Tape of VQFN32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = low . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low . . . . . . . . . . . . 11
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low . . . . . . . . . . . . 13
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C . . . . . . . . . . . . . . . . . . . . . . . . . 14
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V . . . . . . . . . . . . . . . . . . . 14
Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SPI Block Data Bit Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SPI Timing and Logic Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Truth Table AMUX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Data Sheet
6
Revision 3.2, 2014-07-15
Silicon Germanium 24 GHz Transceiver MMIC
BGT24MTR12
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
24 GHz transceiver MMIC with one transmitter and two receiver units
Fully integrated low phase noise VCO
Switchable prescaler with 1.5 GHz and 23 kHz output
On chip power and temperature sensors
Gilbert based homodyne quadrature receiver
Single ended RF input terminals
Low noise figure NFSSB: 12 dB
High conversion gain: 26 dB
High 1 dB input compression point: -12 dBm
Single supply voltage 3.3 V
Power consumption 690 mW in continuous operating mode
200 GHz bipolar SiGe:C technology b7hf200
Fully ESD protected device
VQFN-32-9 leadless plastic package incl. LTI feature
Pb-free (RoHS compliant) package
Description
The BGT24MTR12 is a Silicon Germanium MMIC for signal generation and reception, operating from 24.0 to 24.25
GHz. It is based on a 24 GHz fundamental voltage controlled oscillator. A switchable frequency prescaler is
included with output frequencies of 1.5 GHz and 23 kHz. The main RF output delivers typ. 11 dBm signal power
to feed an antenna. A RC polyphase filter (PPF) is used for LO quadrature phase generation of the homodyne
quadrature downconversion mixer. Output power sensors as well as a temperature sensor are implemented for
monitoring purposes. The device is controlled via SPI and is manufactured in a 0.18µm SiGe:C technology offering
a cutoff frequency of 200 GHz. The MMIC is packaged in a 32 pin leadless RoHs compliant VQFN package.
Product Name
Package
Chip
Marking
BGT24MTR12
VQFN32-9
T0825
BGT24MTR12
Data Sheet
7
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Features
SI CS CLK
Q1
Q2
3
2
TX Power
Sensor
Temp.
Sensor
ANA
AMUX
SPI
/65536
TX
TXX
PA
/16
2
FINE
LO POWER
SENSOR
Buffer
MPA
COARSE
IFQ1
90°
IFQX1
LO
Buffer
RFIN1
PPF*
LNA
0°
IFI1
IFIX1
IFQ2
IFQX2
90°
LO
Buffer
RFIN2
PPF*
LNA
0°
IFI2
IFIX2
* Poly Phase Filter
BGT24MTR12_Chip_BID.vsd
Figure 1
BGT24MTR12 Block Diagram
Data Sheet
8
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2
Electrical Characteristics
2.1
Absolute Maximum Ratings
TA = -40 °C to 105 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)1)
Table 1
Absolute Maximum Ratings
Symbol
Parameter
Values
Unit
Note / Test Condition
Min.
-0.3
0
Typ.
Max.
3.6
0
Supply voltage
VCC
–
–
V
V
–
DC voltage at RF Pins TX,
TXX, RFIN1, RFIN2
VDCRF
MMIC provides short circuit
to GND for all RF pins
DC voltage at Pins IFI1/2,
IFIX1/2, IFQ1/2, IFQX1/2
VDCIF
IIF
0
–
–
Vcc
3.5
V
–
DC current into Pins IFI1/2,
IFIX1/2, IFQ1/2, IFQX1/2
-8.5
mA
max. values indicate
current due to short circuit
to GND and Vcc
respectively
DC voltage at Pin ANA
VDCANA
-0.3
125
–
3.6
V
–
DC current into Pin ANA (Sink) IANA SINK
350
500
µA
max. values indicate
current due to short circuit
to GND and Vcc
respectively
DC current into Pin ANA
(Source)
IANA SOURCE
-7
–
–
mA
–
DC voltage at Pin Q1
DC current into Pin Q1
DC voltage at Pin Q2
VDCQ1
IQ1
Vcc-0.3 –
Vcc
12
3.6
3
V
–
–
–
–
–
-8
–
–
–
–
mA
V
VDCQ2
-0.3
-3
DC current into Pin Q2 enabled IQ2EN
mA
µA
DC current into Pin Q2
disabled
IQ2DIS
-10
10
DC voltage at SPI input Pins
SI, CLK, CS
VDCSPIIN
-0.3
–
–
–
–
–
–
3.6
3
V
–
–
–
–
DC current into SPI input Pins ISPIIN
SI, CLK, CS
mA
dBm
V
RF input power into Pins
RFIN1, RFIN2
PRF
–
0
DC voltage at Pins Fine,
Coarse
VF, VC
IF, IC
0
5
DC current into Pins FINE,
COARSE
-1
0.11
mA
Positive currents if VTUNE
VCC
>
1) Not subject to production test, specified by design
Data Sheet
9
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 1
Absolute Maximum Ratings (cont’d)
Parameter
Symbol
Min.
Values
Unit
Note / Test Condition
Typ.
Max.
1050
150
Total power dissipation
Junction temperature
PDISS
TJ
–
–
–
–
mW
°C
With BIST deactivated
–
-40
-40
Ambient temperature range
TA
105
°C
TA = temperature at
package soldering point
Storage temperature range
TSTG
-40
–
150
°C
–
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Thermal Resistance
Table 2
Thermal Resistance
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Junction - soldering point1)
RthJS
–
40
K/W
–
1) For calculation of RthJS please refer to application note thermal resistance
2.3
ESD Integrity
Table 3
ESD Integrity
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
1
ESD robustness, HBM1)
ESD robustness, CDM2)
VESD-HBM -1
–
–
kV
V
All pins
All pins
VESD-CDM -500
500
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kΩ, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human
Body Model (HBM)-Component Level
2) According to JEDEC JESD22-C101 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-Discharge-
Withstand Thresholds of Microelectronic Components
Data Sheet
10
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4
Measured RF Characteristics
Power Supply
2.4.1
Table 4
Typical Characteristics TA = -40 .. 105 °C, SPI-Bit 4 = low
Symbol
Values
Typ.
Unit
Note /
Test Condition
Parameter
Min.
3.135
150
Max.
3.465
270
VCC
ICC
3.3
V
–
Supply voltage
Supply current
210
mA
Max. TX output
power, all prescal-
ers are activated,
LO and TX output
buffer in high mode
2.4.2
TX Section
Table 5
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1)
Symbol
Values
Typ.
Unit
Note /
Test Condition
Parameter
Min.
24.0
0.53)
0.53)
–
Max.
24.25
3.1
fVCO
–
–
–
–
–
GHz
V
–
–
–
–
–
VCO frequency range
VCO fine tuning voltage2)
VCO coarse tuning voltage2)
VCO tuning slope FINE
VCO tuning slope COARSE
VCO temperature drift
VCO pushing
VF
3.1
V
VC
Δf / ΔVF
Δf / ΔVC
1500
3000
MHz/V
MHz/V
–
Δf / ΔT
Δf / ΔVCC
PN
-10
-350
–
-6
0
MHz/K Min @ T = -40°C
MHz/V Absolute values
60
-85
350
-75
dBc/Hz @ 100kHz offset,
VF = VC
VCO phase noise
–
20.8-j20.2 –
19.5-j11.7
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
TX/TXX load impedance
ZTX
ZTXX
PTX
aTX
6
3
11
9
15
dBm
dB
–
Max. TX output power
–
Adjustable via SPI
TX ouput power adjustable
range
TX ouput power in “off” mode4)
PTXoff
–
–
-30
dBm
Parameter based on
IFX eval board
design
DQ1
PQ1
–
24
-9
–
–
–
Q1 Prescaler division ratio
Q1 Prescaler output power
-14
-4
dBm
Q1 loaded with 50
Ohm (AC- coupled)
Q1 output impedance4)
Data Sheet
ZQ1
–
50
–
Ω
–
11
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
Table 5
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1) (cont’d)
Symbol
Values
Unit
Note /
Parameter
Test Condition
Min.
–
Typ.
Max.
DQ2
220
–
–
–
–
–
Q2 Prescaler division ratio
VmaxQ2
2.4
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm,13 pF)
Q2 Prescaler max. output
voltage
VminQ2
–
–
0.8
V
Test condition: Q2
loaded with high
impedance probe (1
MOhm, 13 pF)
Q2 Prescaler min. output
voltage
Imaxsource Q2
Imaxsink Q2
RQ2,DIS
1.2
1.2
100
–
–
–
–
–
–
mA
mA
kΩ
Test condition: Q2
loaded with 50 Ohm
to Vcc
Q2 Prescaler max. output
source current
Test condition: Q2
loaded with 50 Ohm
to Vcc
Q2 Prescaler max. output sink
current
–
Q2 Prescaler output resistance
in disable mode
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 21ff and Footprint Figure 8 on Page 24
2) At tuning pins chipinternal pull-up of 60kΩ ±20% to VCC; max.- and min. temperature tuning voltage limits are chosen in
a way that they can be linearly interpolated within operating temperature range
3) Min. limit @ 25°C = 0.8V; min. limit @ 105°C = 1.15V
4) Guaranteed by device design
Data Sheet
12
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.4.3
RX Section
Table 6
Typical Characteristics TA = -40 .. 105 °C, f = 24.0 .. 24.25 GHz, SPI-Bit 4 = low1)
Symbol
Values
Typ.
Unit
Note /
Test Condition
Parameter
Min.
24.0
–
Max.
fRFIN
–
24.25
GHz
–
RFIN frequency range
RFIN port impedance2)
15.9-j18.4 –
15.7-j18.9
Ω
Typical value at
24.125GHz and
VSWR ≤ 2:1
ZRFIN1
ZRFIN2
VSWR
–
–
2:1
–
At source port of off
chip compensation
network as pro-
posed
RFIN VSWR
fIF
0
–
10
MHz
Ω
–
–
IF frequency range
IF output impedance
Leakage LO to RFIN
ZIF
850
–
1000
–
1150
-30
LLO=>RFIN
dBm
LO Signal Power @
RFIN Port, Parame-
ter based on IFX
eval board design
IRFIN1-RFIN2
30
–
–
dB
Parameter based on
IFX eval board
design
Isolation RFIN1 to RFIN2
Voltage conversion gain3)
LNA gain reduction
SSB noise figure
GC
19
3
26
5
31
8
dB
dB
dB
RLOAD,IF > 10 kΩ
ΔGCLG
NSSB
–
–
12
20
Single sideband at
fIF = 100 kHz
fc
–
10
-12
-4
–
20
–
kHz
dBm
dBm
deg
dB
–
–
–
–
–
IF 1/f corner frequency
IP1dB
IIP3
εp
-17
-8
Input compression point
–
Input 3rd order intercept point
Quadrat. phase imbalance
Quadrat. amplitude imbalance
-10
-1
10
1
εA
–
1) Performance based on Application Circuit Figure 2 on Page 15, Cross Section of Application Board, Compensation
Structures and Application Board Layout Figure 4 on Page 21ff and Footprint Figure 8 on Page 24
2) Guaranteed by device design
3) Lowest gain at high temperature, highest gain at low temperature
Data Sheet
13
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Electrical Characteristics
2.5
Temperature Sensor
Monitoring of the chip temperature is provided by the on-chip temperature sensor which delivers temperature-
proportional voltage.
Table 7
Typical Characteristics Temperature Sensor TA = -40 .. 105 °C1)
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
-40
–
Max.
105
–
Temperature range
Output temperature voltage
Sensitivity
TTSENS
°C
V
–
VOUT,TEMP
STSENS
1.50
4.5
@ 25°C
–
–
mV/K
K
–
–
Overall accuracy error
ErrTSENS
–
–
±15
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
2.6
Power Detector
For RF power indication, peak voltage detectors are connected to the output of the TX power amplifier and to the
LO medium power amplifier. To eliminate temperature and supply voltage variations, a reference output VREF is
available through the ANA output for the TX and LO power sensor. The compensated detector output voltage is
given by the difference between VOUT and VREF for both power sensors respectively. This voltage is proportional
to the RF voltage swing at the individual amplifier outputs, its characteristic is non-directional.
Table 8
Typical Characteristics Power Detector TA = -40 .. 105 °C, VCC = 3.3 V1)
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
-10
–
Max.
15
Power range
PPSENS
dBm
mV
–
TX power sensor
VOUT,TX
VREF,TX
-
550
–
@ PTX = 11 dBm
LO power sensor
VOUT,LO
VREF,LO
-
–
50
–
mV
@ typ. internal PLO
1) all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Data Sheet
14
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3
Application Circuit and Block Diagram
3.1
Application Circuit Schematic
26
25
24
23
22
21
20
19
18
17
TEST PIN 2)
Q2
27
28
29
30
31
16
15
14
13
12
IFIX2
IFI2
IFIX1
IFI1
IFQ2
IFQ1
IFQX2
IFQX1
VEE
32
11
VEE
7
8
9
3
4
6
1
2
5
10
C4 4)
470μF
C3
1μF
R1 1)
100Ω
C1 1)
1μF
R2 1)
100Ω
C2 1)
1μF
VCC 3)
VCC 3)
FINE
COARSE
1) RC-time constants to be defined according to modulation requirements.
2) Connect pin 16 to pin 17
3) Galvanic connection of VCC pins on silicon
4) Optional value: according to quality of supply voltage
BGT24MTR12_Appl_BID.vsd
Figure 2
Application Circuit with Chip Outline (Top View)
Data Sheet
15
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Table 9
Bill of Materials
Part Number
C1 ... C4
Part Type
Manufacturer
Various
Size
Comment
Chip capacitor
Chip resistor
Various
0402
–
–
R1 ... R2
Various
Data Sheet
16
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.2
Pin Description
Table 10
Pin No.
1
Pin Definition and Function
Name
VCC
VEE
Function
Supply voltage
2
Ground
3
RFIN1
VEE
RF input downconverter 1
Ground
4
5
FINE
COARSE
VEE
VCO fine tuning input
6
VCO coarse tuning input
Ground
7
8
RFIN2
VEE
RF input downconverter 2
Ground
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VCC
VEE
Supply voltage
Ground
IFQX2
IFQ2
IFI2
Complementary quadrature phase IF output downconverter 2
Quadrature phase IF output downconverter 2
In phase IF output downconverter 2
Complementary in phase IF output downconverter 2
Test pin; DC coupled pin
Test pin; DC coupled pin
Chip select input SPI (inverted)
Clock input SPI block
IFIX2
TEST PIN
TEST PIN
CS
CLK
SI
Data input SPI block
VEE
Ground
TX
Transmit output
TXX
Complementary transmit output
Ground
VEE
ANA
Analog output
Q1
Prescaler output 1.5GHz
Prescaler output 23kHz
Complementary in phase IF output downconverter 1
In phase IF output downconverter 1
Quadrature phase IF output downconverter 1
Complementary quadrature phase IF output downconverter 1
Ground
Q2
IFIX1
IFI1
IFQ1
IFQX1
VEE
Data Sheet
17
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.3
SPI
1.) Three signals control the serial peripheral interface of the BGT24MTR12:
SI (Data); CLK (Clock); CS (Chip select)
2.) The data bits SI (MSB first) are read in the shift register with falling edge of the CLK signal.
Please make sure, that the data is present at least 10 ns before and at least 10 ns after the falling edge of the
clock signal.
3.) The CLK and CS signals are combined internally.
At least 20 ns before first rising edge of the first CLK signal CS needs to be in "low" state.
While the Data is read, CS has to remain in "low" state.
4.) When Data read in is finished, the shift register content will be written in the latch at the rising edge of the CS
signal. The time between the last falling edge of the CLK signal and the rising edge of the CS must be at least 20
ns.
Table 11
SPI Block Data Bit Description
Data Bit
15
Name
GS
Description (Logic High)
LNA Gain reduction
Not used
Power ON State
low
low
14
–
13
AMUX2
DIS_PA
Test Bit
Analog multiplexer control bit 2 high
Disable Power Amplifier high
12
11
Test bit, must be low otherwise low
malfunction
10
9
Test Bit
Test Bit
Test bit, must be low otherwise low
malfunction
Test bit, must be low otherwise low
malfunction
8
7
6
5
4
AMUX1
Analog multiplexer control bit 1 low
Analog multiplexer control bit 0 low
AMUX0
DIS_DIV64k
DIS_DIV16
PC2_BUF
Disable 64k divider
Disable 16 divider
low
low
High LO buffer output power, low
need to be low otherwise
increased current consumption
3
2
1
0
PC1_BUF
PC2_PA
PC1_PA
PC0_PA
High TX buffer output power
TX power reduction bit 2
TX power reduction bit 1
TX power reduction bit 0
low
high
high
high
Data Sheet
18
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
BGT24MTR12_SPI.vsd
Figure 3
Timing Diagram of the SPI
SPI Timing and Logic Levels
Table 12
Parameter
Symbol
Values
Typ.
Unit
Min.
0
Max.
50
–
Serial clock frequency
Serial clock high time
Serial clock low time
Chip select lead time
Chip select lag time
fSCLK
fSCLK(H)
tSCLK(L)
tCS(lead)
tCS(lag)
tSI(su)
tSI(h)
–
–
–
–
–
–
–
–
–
–
–
MHz
ns
ns
ns
ns
ns
ns
V
10
10
20
20
10
10
0
–
–
–
Data setup time
–
Data hold time
–
Low level (SI, CLK, CS)
High level (SI, CLK, CS)
Input capacitance (SI, CLK, CS)
Input current (SI, CLK, CS)
VIN(L)
VIN(H)
CIN
0.8
VCC
2
2.0
–
V
pF
µA
IIN
-150
150
Table 13
Truth Table AMUX
Output signal ANA
VOUT,TX
AMUX2
low
AMUX1
low
AMUX0
low
VREF,TX
low
low
high
low
VOUT,LO
low
high
high
low
VREF,LO
low
high
low
VTEMP
high
high
Test_Signal1
low
high
Data Sheet
19
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Table 13
Truth Table AMUX (cont’d)
Output signal ANA
Test_Signal2
AMUX2
high
AMUX1
high
AMUX0
low
Test_Signal2
high
high
high
Data Sheet
20
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.4
Application Board
Blind-Vias
Vias
Ro4350B, 0.254mm
Copper
35um
FR4, 0.5mm
FR4, 0.25mm
BGT24MTR12_Cross_Section_View.vsd
Figure 4
Cross-Section View of Application Board
Single-Ended RFIN
Differential TX
0.50
1.15
0.50
1.10
0.30
0.30
All specified values in [mm]
BGT24MTR12_VQFN32-9-CS.vsd
Figure 5
Detail of Compensation Structure (valid for appl. board mat. Ro4350B, 0.254mm acc. to Fig. 5)
Data Sheet
21
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
Mid1 and Bottom layer (top
view)
Top layer (top view)
Mid2 layer (top view)
BGT24MTR12_App_Board_Layout.vsd
Figure 6
Application Board Layout
Note:In order to achieve the same performance as given in this datasheet please follow the suggested PCB-
layout. The compensation structure is critical for RF performance. Via holes as recommended on one of next
pages (not shown above).
Data Sheet
22
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Application Circuit and Block Diagram
3.5
Equivalent Circuit Diagram of MMIC Interfaces
Pin 5, 6
Pin 3, 8, 22, 23
Pin 12, 13, 14, 15, 28, 29, 30, 31
VCC
VCC
RFIN1,
RFIN2, TX,
TXX
60kΩ
FINE,
COARSE
400Ω
300Ω
IFx
100Ω
VEE
VEE
VEE
Pin 25
Pin 26
Pin 18, 19, 20
VCC
VCC
VCC
50Ω
54kΩ
CS, CLK, SI
Q1
ANA
40Ω
1500Ω
VEE
VEE
VEE
VCC
Pin 27
120Ω
120Ω
Q2
Tolerance of all resistors +/- 20%
VEE
BGT24MTR12_ESB.vsd
Figure 7
Equivalent Circuit Diagram of MMIC Interfaces
Data Sheet
23
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4
Physical Characteristics
4.1
Package Footprint
Copper
Solder Mask
Vias
4.3
3.9
3.2
Pastefree
Area
0.3
1.0
0.7
0.3
0.5
0.1
0.1
0.15
0.15
All specified values in [mm]
BGT24MTR12_VQFN32-9-FP.vsd
Figure 8
Recommended Footprint and Stencil Layout for the VQFN32-9 Package
Data Sheet
24
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.2
Reflow Profile
Soldering process qualified during qualification with “Preconditioning MSL-3: 30°C. 60%r.h., 192h, according to
JEDEC JSTD20”.
Reflow Profile recommended by Infineon Technologies AG
(based on IPC/JEDEC J-STD-020C)
BGT24MTR12_Reflow_Profile.vsd
Figure 9
Reflow Profile for BGT24MTR12 (VQFN32-9)
Data Sheet
25
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
4.3
Package Dimensions
All specified values in [mm]
BGT24MTR12_VQFN32-9-PO.vsd
Figure 10 Package Outline (Top, Side and Bottom View)
BGT24MTR12_VQFN32-9_ML.vsd
Figure 11 Marking Layout VQFN32-9
Data Sheet
26
Revision 3.2, 2014-07-15
BGT24MTR12
Silicon Germanium 24 GHz Transceiver MMIC
Physical Characteristics
All specified values in [mm]
BGT24MTR12_VQFN32-9_CT.vsd
Figure 12 Tape of VQFN32-9
Data Sheet
27
Revision 3.2, 2014-07-15
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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