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BPW34S(E9087)

更新时间：2024-09-18 01:50:08
品牌：INFINEON
描述：Silicon PIN Photodiode

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BPW34S(E9087) 概述

Silicon PIN Photodiode 硅PIN光电二极管 光电二极管

BPW34S(E9087) 规格参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.28
Is Samacsys：N最大暗电源：30 nA
JESD-609代码：e0安装特点：SURFACE MOUNT
最高工作温度：80 °C最低工作温度：-40 °C
光电设备类型：PIN PHOTODIODE最长响应时间：2e-8 s
最大反向电压：32 V半导体材料：Silicon
子类别：Photo Diodes表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

BPW34S(E9087) 数据手册

通过下载BPW34S(E9087)数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Silizium-PIN-Fotodiode  
BPW 34  
NEU: in SMT und als Reverse Gullwing  
Silicon PIN Photodiode  
BPW 34 S  
BPW 34 S (E9087)  
NEW: in SMT and as Reverse Gullwing  
5.4  
Cathode marking  
4.9  
4.5  
4.3  
Chip position  
4.0  
3.7  
0.6  
0.6  
0.4  
0.4  
0.35  
0.2  
0.5  
0.3  
0.8  
0.6  
0 ... 5˚  
5.08 mm  
spacing  
BPW 34  
Photosensitive area  
2.65 mm x 2.65 mm  
Approx. weight 0.1 g  
GEO06643  
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.  
Wesentliche Merkmale  
Features  
● Speziell geeignet für Anwendungen  
im Bereich von 400 nm bis 1100 nm  
● Kurze Schaltzeit (typ. 20 ns)  
● DIL-Plastikbauform mit hoher  
Packungsdichte  
● Especially suitable for applications from  
400 nm to 1100 nm  
● Short switching time (typ. 20 ns)  
● DIL plastic package with high packing  
density  
● BPW 34 S/(E9087): geeignet für  
Vapor-Phase Löten und IR-Reflow  
Löten (JEDEC level 4)  
● BPW 34 S/(E9087): suitable for  
vapor-phase and IR-reflow soldering  
(JEDEC level 4)  
Anwendungen  
Applications  
● Lichtschranken für Gleich- und  
Wechsellichtbetrieb  
● IR-Fernsteuerungen  
● Industrieelektronik  
● Photointerrupters  
● IR remote controls  
● Industrial electronics  
● For control and drive circuits  
● “Messen/Steuern/Regeln”  
Semiconductor Group  
1
1998-08-27  
BPW 34, BPW 34 S  
BPW 34 S (E9087)  
1.1  
0.9  
Chip position  
6.7  
6.2  
4.5  
4.3  
1.8±0.2  
BPW 34 S  
Photosensitive area  
Cathode lead  
2.65 mm x 2.65 mm  
GEO06863  
Chip position  
1.1  
0.9  
6.7  
6.2  
4.5  
4.3  
1.8±0.2  
BPW 34 S (E9087)  
Photosensitive area  
2.65 mm x 2.65 mm  
Cathode lead  
GEO06916  
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.  
Typ  
Type  
Bestellnummer  
Ordering Code  
BPW 34  
Q62702-P73  
BPW 34 S  
Q62702-P1602  
Q62702-P1790  
BPW 34 S (E9087)  
Semiconductor Group  
2
1998-08-27  
BPW 34, BPW 34 S  
BPW 34 S (E9087)  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
– 40 ... + 85  
°C  
Operating and storage temperature range  
Sperrspannung  
Reverse voltage  
VR  
32  
V
Verlustleistung, TA = 25 °C  
Ptot  
150  
mW  
Total power dissipation  
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)  
Characteristics (TA = 25 °C, standard light A, T = 2856 K)  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Fotoempfindlichkeit, VR = 5 V  
80 (≥ 50)  
nA/Ix  
S
Spectral sensitivity  
Wellenlänge der max. Fotoempfindlichkeit  
Wavelength of max. sensitivity  
λS max  
λ
850  
nm  
Spektraler Bereich der Fotoempfindlichkeit  
S = 10 % von Smax  
400 ... 1100  
nm  
Spectral range of sensitivity  
S = 10 % of Smax  
2
Bestrahlungsempfindliche Fläche  
Radiant sensitive area  
A
7.00  
mm  
Abmessung der bestrahlungsempfindlichen  
Fläche  
L × B  
2.65 × 2.65  
mm × mm  
Dimensions of radiant sensitive area  
L × W  
Halbwinkel  
Half angle  
ϕ
± 60  
Grad  
deg.  
Dunkelstrom, VR = 10 V  
Dark current  
IR  
Sλ  
η
2 (≤ 30)  
0.62  
nA  
Spektrale Fotoempfindlichkeit, λ = 850 nm  
Spectral sensitivity  
A/W  
Quantenausbeute, λ = 850 nm  
Quantum yield  
0.90  
Electrons  
Photon  
Leerlaufspannung, Ev = 1000 Ix  
VO  
365 (≥ 300)  
mV  
Open-circuit voltage  
Semiconductor Group  
3
1998-08-27  
BPW 34, BPW 34 S  
BPW 34 S (E9087)  
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K)  
Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d)  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Kurzschlußstrom, Ev = 1000 Ix  
Short-circuit current  
ISC  
80  
20  
µA  
Anstiegs- und Abfallzeit des Fotostromes  
Rise and fall time of the photocurrent  
tr, tf  
ns  
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA  
Durchlaßspannung, IF = 100 mA, E = 0  
VF  
1.3  
V
Forward voltage  
Kapazität, VR = 0 V, f = 1 MHz, E = 0  
C0  
72  
pF  
Capacitance  
Temperaturkoeffizient von VO  
Temperature coefficient of VO  
TCV  
TCI  
NEP  
– 2.6  
0.18  
4.1 × 10  
mV/K  
%/K  
Temperaturkoeffizient von ISC  
Temperature coefficient of ISC  
– 14  
Rauschäquivalente Strahlungsleistung  
Noise equivalent power  
W
√Hz  
VR = 10 V, λ = 850 nm  
12  
Nachweisgrenze, VR = 10 V, λ = 850 nm  
D*  
6.6 × 10  
cm · √Hz  
Detection limit  
W
Semiconductor Group  
4
1998-08-27  
BPW 34, BPW 34 S  
BPW 34 S (E9087)  
Relative spectral sensitivity  
Photocurrent I = f (E ), V = 5 V  
Total power dissipation P = f (T )  
P
v
R
tot  
A
S
= f (λ)  
Open-circuit voltage V = f (E )  
rel  
O
v
100  
10 3  
OHF01066 10 4  
OHF00078  
OHF00958  
160  
mW  
µ
A
mV  
Ι P  
V
Srel  
P
%
tot  
140  
120  
100  
80  
80  
10 2  
10 3  
10 2  
10 1  
VO  
60  
40  
10 1  
Ι P  
60  
10 0  
40  
20  
0
20  
10 -1  
10 0  
10 3 lx 10 4  
EV  
0
10 0  
10 1  
10 2  
400 500 600 700 800 900 nm 1100  
0
20  
40  
60  
80 ˚C 100  
λ
TA  
Dark current  
I = f (V ), E = 0  
Capacitance  
Dark current  
I = f (T ), V = 10 V, E = 0  
C = f (V ), f = 1 MHz, E = 0  
R
R
R
R
A
R
OHF00082  
OHF00081  
OHF00080  
10 3  
4000  
100  
nA  
Ι R  
Ι R  
C
pF  
80  
70  
60  
50  
40  
30  
20  
10  
0
pA  
10 2  
10 1  
10 0  
10 -1  
3000  
2000  
1000  
0
10 -2  
10 -1  
10 0  
10 1  
V
VR  
10 2  
0
20  
40  
60  
80 ˚C 100  
0
5
10  
15  
V
VR  
20  
TA  
Directional characteristics S = f (ϕ)  
rel  
40  
30  
20  
10  
0
OHF01402  
ϕ
1.0  
50  
0.8  
0.6  
0.4  
60  
70  
0.2  
0
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Semiconductor Group  
5
1998-08-27  

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