BSC010N04LSC [INFINEON]
The BSC010N04LSC is the perfect choice for battery powered tools. The OptiMOS™ 5 40V technology also provides the best performance for synchronous rectification in switched mode power supplies (SMPS), commonly found in servers and desktops, and a broad range of industrial applications including telecom, solar micro inverters and fast switching DC-DC converters.;
| 型号： | BSC010N04LSC |
| 厂家： | 
Infineon |
| 描述： | The BSC010N04LSC is the perfect choice for battery powered tools. The OptiMOS™ 5 40V technology also provides the best performance for synchronous rectification in switched mode power supplies (SMPS), commonly found in servers and desktops, and a broad range of industrial applications including telecom, solar micro inverters and fast switching DC-DC converters. |
| 文件： | 总12页 (文件大小：1137K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC010N04LSCꢀ(UL2595)
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
SuperSO8
Features
•ꢀUL-2595ꢀstandard1)ꢀꢀcompliantꢀwithꢀincreasedꢀcreepageꢀdistance
•ꢀDrainꢀtoꢀsourceꢀdistanceꢀincreasedꢀtoꢀmin.ꢀ1.5mm
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC2)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
8 D
7 D
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 2
S 3
G 4
Parameter
Value
Unit
6 D
5 D
VDS
40
V
RDS(on),max
ID
1.05
282
84
mΩ
A
Qoss
nC
nC
QG(0V..10V)
95
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC010N04LSC (UL2595) PG-TDSON-8
10N04LSC
-
1) UL-2595 standard: General Requirements for Battery-Powered Appliances:
https://standardscatalog.ul.com/standards/en/standard_2595. For applications not requiring UL-2595 please refer to
BSC010N04LS.
2) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
-
-
-
-
-
-
-
-
-
-
282
178
248
157
39
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,
RTHJA=50ꢀ°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
1128
330
20
A
TA=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
139
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRTHJA=50ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.5
0.9
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm² cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
0.90
1.05
1.05
1.35
VGS=10ꢀV,ꢀID=50ꢀA
VGS=4.5ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
0.8
1.6
-
Ω
-
Transconductance
140
270
S
|VDS|≥2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
6800 9500 pF
1900 2700 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
160
10
320
-
pF
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
12
46
9
-
-
-
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV
Qg(th)
Qgd
11
-
15
21
-
Qsw
21
Gate charge total1)
Qg
95
133
-
Gate plateau voltage
Gate charge total
Vplateau
Qg
2.4
49
69
-
nC
nC
nC
Gate charge total, sync. FET
Output charge1)
Qg(sync)
Qoss
84
84
118
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
138
1128
1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.81
36
50
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=10ꢀA,ꢀdiF/dt=400ꢀA/µs
VR=20ꢀV,ꢀIF=10ꢀA,ꢀdiF/dt=400ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
72
ns
nC
Qrr
-
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
150
300
125
100
75
50
25
0
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
103
102
1 µs
10 µs
0.5
100
10-1
10-2
100 µs
DC
1 ms
101
100
10-1
10-2
10 ms
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
1.6
3 V
350
300
250
200
150
100
50
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10 V
3.5 V
3.5 V
4.5 V
10 V
3 V
4.5 V
4 V
5 V
2.8 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
150
175
200
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
2.8
350
300
250
200
150
100
2.4
2.0
1.6
1.2
0.8
0.4
0.0
150 °C
25 °C
50
150 °C
25 °C
0
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=50ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
0.8
0.4
0.0
2500 µA
250 µA
-80
-40
0
40
80
120
160
-80
-40
0
40
80
120
160
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
104
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
103
102
101
100
103
102
101
Coss
Crss
0
5
10
15
20
25
30
35
40
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
8 V
20 V
32 V
8
6
4
2
0
25 °C
100 °C
101
125 °C
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
44
43
42
41
40
39
38
37
-80
-40
0
40
80
120
160
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
5ꢀꢀꢀꢀꢀPackageꢀOutlines
MILLIMETERS
DIMENSIONS
MIN.
0.95
0.00
MAX.
1.05
0.05
A
A1
A3
b
0.25
0.21
0.03
0.26
0.41
0.13
0.46
DOCUMENT NO.
Z8B00185539
b1
b2
D
REVISION
01
5.15
5.00
D1
D2
E
3.70
3.15
3.90
3.35
6.15
6.00
SCALE 5:1
E1
E2
e
4mm
0
1
2
3
1.27
8
L
0.59
0.51
0.79
0.71
EUROPEAN PROJECTION
M
N
Ĭ
10
2.86
0.59
12
3.06
0.79
Q
R
aaa
ddd
eee
0.10
0.10
0.08
ISSUE DATE
24.05.2017
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀBoardpadꢀ(PG-TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2020-04-16
OptiMOSTM5ꢀPower-Transistor,ꢀ40V
BSC010N04LSCꢀ(UL2595)
RevisionꢀHistory
BSC010N04LSC (UL2595)
Revision:ꢀ2020-04-16,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.3
Release of final version
Update current rating
2018-08-22
2020-04-16
Trademarks
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(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2020-04-16
相关型号：
BSC010N04LSIATMA1
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