BSC035N10NS5 [INFINEON]
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.;
| 型号： | BSC035N10NS5 |
| 厂家： | 
Infineon |
| 描述： | Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：1466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC035N10NS5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
PG-TDSON-8
8
5
7
6
Features
6
7
5
4
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
Pin 1
•ꢀN-channel
2
3
3
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
2
4
1
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 5-8
Parameter
Value
100
3.5
Unit
VDS
V
*1
Gate
Pin 4
RDS(on),max
ID
mΩ
A
155
91
Source
Pin 1-3
*1: Internal body diode
Qoss
nC
nC
QG(0V..10V)
70
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC035N10NS5
PG-TDSON-8
035N10NS
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
155
98
19
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25°C,ꢀRthJAꢀ=50K/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
620
398
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
156
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W3)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.5
0.8
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.0
3.8
VDS=VGS,ꢀID=115ꢀµA
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
2.9
3.5
3.5
4.7
VGS=10ꢀV,ꢀID=50ꢀA
VGS=6ꢀV,ꢀID=25ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.5
2.3
-
Ω
-
Transconductance
65
130
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
5000 6500 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
770
34
1000 pF
60
-
pF
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
22
13
47
15
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
-
-
-
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
22
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
14
-
14
21
-
Qsw
23
Gate charge total1)
Qg
70
87
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
4.5
61
-
nC
nC
91
121
VDD=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
117
620
1.1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
0.82
62
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
124
244
ns
nC
Qrr
122
1) Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
180
160
160
140
120
100
80
140
120
100
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
100
1 µs
0.5
0.2
10 µs
102
101
100 µs
10-1
0.1
1 ms
0.05
0.02
10 ms
DC
100
10-1
10-2
0.01
10-2
single pulse
10-3
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
700
10
10 V
600
7 V
8
500
400
5 V
6
4
2
0
5.5 V
6 V
6 V
7 V
300
200
100
0
5.5 V
5 V
10 V
0
1
2
3
4
5
0
40
80
120
160
200
240
280
320
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
700
160
600
500
120
80
40
0
25 °C
400
150 °C
300
200
100
0
0
2
4
6
8
10
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
Diagramꢀ9:ꢀDrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
7
4.0
3.5
3.0
6
5
1150 µA
115 µA
2.5
2.0
1.5
1.0
0.5
0.0
max
4
typ
3
2
1
0
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
150 °C
Ciss
150 °C, max
103
102
101
100
Coss
102
Crss
101
0
20
40
60
80
100
0.0
0.5
1.0
1.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
9
8
7
6
25 °C
100 °C
50 V
101
125 °C
80 V
20 V
5
4
3
2
1
0
100
10-1
100
101
102
103
0
10
20
30
40
50
60
70
80
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=50ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-75 -50 -25
0
25
50
75 100 125 150 175
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U08
MILLIMETERS
DIMENSIONS
MIN.
0.90
0.34
0.15
4.80
3.90
0.00
5.70
4.05
MAX.
1.20
0.54
0.35
5.35
4.40
0.22
6.10
4.25
A
b
c
D
D1
D2
E
E1
e
1.27
L
0.45
0.45
0.65
0.65
L1
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ100ꢀV
BSC035N10NS5
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
11
Rev.ꢀ2.5,ꢀꢀ2022-09-05
OptiMOSTM 5 Power-Transistor , 100 V
BSC035N10NS5
Revision History
BSC035N10NS5
Revision: 2022-09-05, Rev. 2.5
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
2.4
2.5
Release of final version
2014-12-17
2016-09-07
2021-02-09
2021-05-10
2021-05-11
2022-09-05
Update Avalanche Energy
Update current rating
Update package drawings
Fix naming mismatch
Update outline drawing and footnotes
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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Published by
Infineon Technologies AG
81726 München, Germany
© 2022 Infineon Technologies AG
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Technologies Office (www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
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reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
12
Rev. 2.5, 2022-09-05
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INFINEON
BSC037N03MSCG
Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC037N03MSCGATMA1
Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC037N08NS5
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
INFINEON
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