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BSC0501NSI

更新时间：2024-09-18 22:15:05

品牌：INFINEON

描述：Metal Oxide Semiconductor Field Effect Transistor

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BSC0501NSI 概述

Metal Oxide Semiconductor Field Effect Transistor 功率场效应晶体管

BSC0501NSI 规格参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F5	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.75
雪崩能效等级（Eas）：	20 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	30 V
最大漏极电流 (ID)：	29 A	最大漏源导通电阻：	0.0024 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F5
湿度敏感等级：	1	元件数量：	1
端子数量：	5	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	400 A
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

BSC0501NSI 数据手册

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MOSFET

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor

OptiMOS^TM

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

DataꢀSheet

Rev.ꢀ2.0

Final

PowerꢀManagementꢀ&ꢀMultimarket

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

SuperSO8

1ꢀꢀꢀꢀꢀDescription

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀbuckꢀconverters

•ꢀMonolithicꢀintegratedꢀSchottky-likeꢀdiode

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)ꢀ@ꢀV_GS=4.5ꢀV

•ꢀ100%ꢀavalancheꢀtested

•ꢀN-channel

•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC¹⁾ꢀꢀforꢀtargetꢀapplications

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

S 1

8 D

7 D

Parameter

Value

Unit

S 2

S 3

G 4

V_DS

6 D

5 D

R_DS(on),max

I_D

1.9

mΩ

100

Q_OSS

Q_G(0V..4.5V)

11.4

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

BSC0501NSI

PG-TDSON-8

0501NSI

¹⁾J-STD20 and JESD22

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

TableꢀofꢀContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

2ꢀꢀꢀꢀꢀMaximumꢀratings

atꢀT_jꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Max.

Min.

100

V_GS=10ꢀV,ꢀT_C=25ꢀ°C

V_GS=10ꢀV,ꢀT_C=100ꢀ°C

V_GS=4.5ꢀV,ꢀT_C=25ꢀ°C

Continuous drain current

I_D

V_GS=4.5ꢀV,ꢀT_C=100ꢀ°C

V_GS=10ꢀV,ꢀT_A=25ꢀ°C,ꢀR_thJA=50ꢀK/W¹⁾

Pulsed drain current²⁾

I_D,pulse

I_AS

400

T_C=25ꢀ°C

Avalanche current, single pulse³⁾

Avalanche energy, single pulse

Gate source voltage

T_C=25ꢀ°C

E_AS

V_GS

I_D=50ꢀA,ꢀR_GS=25ꢀΩ

-20

2.5

T_C=25ꢀ°C

Power dissipation

P_tot

T_A=25ꢀ°C,ꢀR_thJA=50ꢀK/W¹⁾

IEC climatic category;

DIN IEC 68-1: 55/150/56

Operating and storage temperature

T_j,ꢀT_stg

-55

150

°C

3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Thermal resistance, junction - case,

bottom

R_thJC

R_thJA

2.5

K/W

Thermal resistance, junction - case,

top

Device on PCB,

6 cm²cooling area¹⁾

¹⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm²(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

²⁾See Diagram 3 for more detailed information

³⁾See Diagram 13 for more detailed information

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics

Values

Typ.

Parameter

Symbol

V_(BR)DSS

Unit Noteꢀ/ꢀTestꢀCondition

Max.

Min.

Drain-source breakdown voltage

V_GS=0ꢀV,ꢀI_D=10ꢀmA

Breakdown voltage temperature

coefficient

dV_(BR)DSSꢀ/dT_j-

V_GS(th)1.2

I_DSS

mV/K I_D=10ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C

Gate threshold voltage

V_DS=V_GS,ꢀI_D=250ꢀµA

0.5

V_DS=24ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=25ꢀ°C

V_DS=24ꢀV,ꢀV_GS=0ꢀV,ꢀT_j=125ꢀ°C

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

mΩ

0.5

I_GSS

100

V_GS=20ꢀV,ꢀV_DS=0ꢀV

2.0

1.5

2.4

1.9

V_GS=4.5ꢀV,ꢀI_D=30ꢀA

V_GS=10ꢀV,ꢀI_D=30ꢀA

R_DS(on)

Gate resistance

R_G

g_fs

1.4

2.3

Ω

Transconductance

150

|V_DS|>2|I_D|R_DS(on)max,ꢀI_D=30ꢀA

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics

Values

Typ.

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Max.

Input capacitance¹⁾

Output capacitance¹⁾

C_iss

C_oss

C_rss

1600 2200 pF

V_GS=0ꢀV,ꢀV_DS=15ꢀV,ꢀf=1ꢀMHz

530

720

Reverse transfer capacitance

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

Turn-on delay time

Rise time

t_d(on)

t_r

t_d(off)

t_f

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

Turn-off delay time

Fall time

V_DD=15ꢀV,ꢀV_GS=10ꢀV,ꢀI_D=30ꢀA,

R_G,ext=1.6ꢀΩ

¹⁾Defined by design. Not subject to production test

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics¹⁾ꢀ

Values

Typ.

3.9

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Max.

Min.

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q_gs

V_DD=15ꢀV,ꢀI_D=30ꢀA,ꢀV_GS=0ꢀtoꢀ4.5ꢀV

V_DD=15ꢀV,ꢀI_D=30ꢀA,ꢀV_GS=0ꢀtoꢀ10ꢀV

V_DS=0.1ꢀV,ꢀV_GS=0ꢀtoꢀ4.5ꢀV

Q_g(th)

Q_gd

2.5

2.9

Q_sw

4.2

Gate charge total

Q_g

11.4

2.5

15.4

Gate plateau voltage

Gate charge total²⁾

V_plateau

Q_g

Gate charge total, sync. FET

Output charge²⁾

Q_g(sync)

Q_oss

10.5

V_DD=15ꢀV,ꢀV_GS=0ꢀV

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode

Values

Parameter

Symbol

Unit Noteꢀ/ꢀTestꢀCondition

Min.

Typ.

Max.

Diode continuous forward current

Diode pulse current

I_S

T_C=25ꢀ°C

I_S,pulse

V_SD

Q_rr

400

0.65

T_C=25ꢀ°C

Diode forward voltage

0.55

V_GS=0ꢀV,ꢀI_F=7ꢀA,ꢀT_j=25ꢀ°C

V_R=15ꢀV,ꢀI_F=I_S,ꢀdi_F/dt=400ꢀA/µs

Reverse recovery charge

¹⁾See ″Gate charge waveforms″ for parameter definition

²⁾Defined by design. Not subject to production test

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams

Diagramꢀ1:ꢀPowerꢀdissipation

Diagramꢀ2:ꢀDrainꢀcurrent

120

100

120

160

120

160

T_Cꢀ[°C]

P_tot=f(T_C)

I_D=f(T_C);ꢀV_GS≥10ꢀV

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance

10³

10¹

1 µs

10 µs

0.5

10²

100 µs

1 ms

10⁰

0.2

0.1

0.05

10¹

10^-1

0.02

10 ms

0.01

single pulse

10⁰

10^-2

10^-1

10^-3

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DSꢀ[V]

t_pꢀ[s]

I_D=f(V_DS);ꢀT_C=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀt_p

Z_thJC=f(t_p);ꢀparameter:ꢀD=t_p/T

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics

Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance

500

10 V

5 V

4 V

400

4.5 V

3.2 V

3.5 V

4 V

3.5 V

300

200

100

4.5 V

5 V

7 V

8 V

3.2 V

3 V

10 V

2.8 V

V_DSꢀ[V]

I_Dꢀ[A]

I_D=f(V_DS);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

R_DS(on)=f(I_D);ꢀT_j=25ꢀ°C;ꢀparameter:ꢀV_GS

Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics

Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance

400

500

320

240

160

400

300

200

100

150 °C

25 °C

100

150

200

250

V_GSꢀ[V]

I_Dꢀ[A]

I_D=f(V_GS);ꢀ|V_DS|>2|I_D|R_DS(on)max;ꢀparameter:ꢀT_j

g_fs=f(I_D);ꢀT_j=25ꢀ°C

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance

Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage

3.0

2.5

2.0

10 mA

1.5

1.0

0.5

0.0

typ

1.5

1.0

0.5

0.0

-60

-20

100

140

180

-60

-20

100

140

180

T_jꢀ[°C]

R_DS(on)=f(T_j);ꢀI_D=30ꢀA;ꢀV_GS=10ꢀV

V_GS(th)=f(T_j);ꢀV_GS=V_DS

Diagramꢀ11:ꢀTyp.ꢀcapacitances

Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode

10⁴

10³

-55 °C

25 °C

125 °C

150 °C

Ciss

10²

10¹

10⁰

10^-1

10³

Coss

10²

Crss

10¹

0.0

0.4

0.8

1.2

V_DSꢀ[V]

V_SDꢀ[V]

C=f(V_DS);ꢀV_GS=0ꢀV;ꢀf=1ꢀMHz

I_F=f(V_SD);ꢀparameter:ꢀT_j

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

Diagramꢀ13:ꢀAvalancheꢀcharacteristics

Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge

10²

15 V

6 V

25 °C

24 V

10¹

100 °C

125 °C

10⁰

10¹

10²

10³

t_AVꢀ[µs]

Q_gateꢀ[nC]

I_AS=f(t_AV);ꢀR_GS=25ꢀΩ;ꢀparameter:ꢀT_j(start)

V_GS=f(Q_gate);ꢀI_D=30ꢀAꢀpulsed;ꢀparameter:ꢀV_DD

Diagramꢀ15:ꢀTyp.ꢀdrain-sourceꢀleakageꢀcurrent

Gate charge waveforms

10^-3

125 °C

100 °C

10^-4

75 °C

10^-5

25 °C

10^-6

10^-7

V_DSꢀ[V]

I_DSS=f(V_DS);ꢀV_GS=0ꢀV;ꢀparameter:ꢀT_j

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

6ꢀꢀꢀꢀꢀPackageꢀOutlines

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

Dimension in mm

Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTDSON-8ꢀTape

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

OptiMOS^TM5ꢀPower-MOSFET,ꢀ30ꢀV

BSC0501NSI

RevisionꢀHistory

BSC0501NSI

Revision:ꢀ2015-07-13,ꢀRev.ꢀ2.0

Previous Revision

Revision Date

2.0

Subjects (major changes since last revision)

Release of final version

2015-07-13

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Warnings

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2015-07-13

BSC0501NSI 相关器件

型号	制造商	描述	价格	文档
BSC0501NSIATMA1	INFINEON	Power Field-Effect Transistor, 29A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	获取价格
BSC0501NSI_15	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0502NSI	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0502NSIATMA1	INFINEON	Power Field-Effect Transistor, 26A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	获取价格
BSC0502NSI_15	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0503NSI	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0503NSIATMA1	INFINEON	Power Field-Effect Transistor, 22A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	获取价格
BSC0503NSI_15	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0504NSI	INFINEON	Metal Oxide Semiconductor Field Effect Transistor	获取价格
BSC0504NSIATMA1	INFINEON	Power Field-Effect Transistor, 21A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8	获取价格