BSC050N03LS G [INFINEON]
极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6）;
| 型号： | BSC050N03LS G |
| 厂家： | 
Infineon |
| 描述： | 极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。OptiMOS™ 30V 产品专为满足笔记本电脑的电源管理需求而量身定制，可改善电磁干扰行为，以及延长电池寿命。可用于半桥配置（功率级 5x6） 通信 电池 栅 数据通信 服务器 电脑 栅极 调节器 |
| 文件： | 总10页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC050N03LS G
OptiMOS™3 Power-MOSFET
Features
Product Summary
VDS
30
5
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
RDS(on),max
ID
mW
A
80
• Qualified according to JEDEC1) for target applications
PG-TDSON-8
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC050N03LS G
PG-TDSON-8
050N03LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
80
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
A
51
V GS=4.5 V, T C=25 °C
66
42
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
18
Pulsed drain current3)
I D,pulse
I AS
T C=25 °C
320
50
Avalanche current, single pulse4)
Avalanche energy, single pulse
T C=25 °C
E AS
I D=40 A, R GS=25 W
35
mJ
I D=50 A, V DS=24 V,
di /dt =200 A/µs,
T j,max=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
V
V GS
Gate source voltage
1) J-STD20 and JESD22
±20
Rev. 2.1
page 1
2013-05-17
BSC050N03LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
50
W
T A=25 °C,
R thJA=50 K/W2)
2.5
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
-
-
-
2.5
20
50
K/W
top
6 cm2 cooling area2)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=250 µA
Drain-source breakdown voltage
Gate threshold voltage
30
1
-
-
-
V
2.2
V DS=30 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=30 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
10
6.0
4.2
1.4
100 nA
R DS(on) V GS=4.5 V, I D=30 A
V GS=10 V, I D=30 A
R G
Drain-source on-state resistance
7.5
5
mW
-
Gate resistance
0.7
2.5
W
|V DS|>2|I D|R DS(on)max
I D=30 A
,
g fs
Transconductance
38
76
-
S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
Rev. 2.1
page 2
2013-05-17
BSC050N03LS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
2100
790
41
2800 pF
V GS=0 V, V DS=15 V,
f =1 MHz
C oss
Crss
t d(on)
t r
1100
-
5.2
4.0
21
-
-
-
-
ns
V DD=15 V, V GS=10 V,
I D=30 A, R G=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
3.6
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
6.3
3.2
2.9
6.0
13
8.4
4.3
4.8
8.9
17
-
nC
Q g(th)
Q gd
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
Q sw
Q g
Gate charge total
V plateau
Gate plateau voltage
3.1
V
V DD=15 V, I D=30 A,
V GS=0 to 10 V
Q g
Gate charge total
-
26
35
V DS=0.1 V,
V GS=0 to 4.5 V
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
11
20
14
27
nC
Q oss
V DD=15 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
45
A
T C=25 °C
I S,pulse
320
V GS=0 V, I F=30 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.85
-
1.1
15
V
V R=15 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
4) See figure 13 for more detailed information
5) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-17
BSC050N03LS G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
50
40
30
20
10
0
100
80
60
40
20
0
0
40
80
120
160
0
40
80
120
160
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
0.5
100 µs
1
0.2
DC
101
0.1
1 ms
0.05
0.02
10 ms
0.1
0.01
100
single pulse
10-1
0
0
0
0
0
0
1
0.01
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 2.1
page 4
2013-05-17
BSC050N03LS G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
300
10 V
250
20
5 V
18
3 V
16
14
4.5 V
200
150
100
50
3.2 V
12
3.5 V
10
8
4 V
4 V
4.5 V
10 V
6
5 V
4
3.5 V
3.2 V
2.8 V
11.5 V
2
3 V
0
0
0
1
2
3
0
10
20
30
40
50
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
200
160
120
80
160
120
80
40
0
40
150 °C
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.1
page 5
2013-05-17
BSC050N03LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=30 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
8
7
2.5
2
6
98 %
5
1.5
1
typ
4
3
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
10000
104
1000
25 °C
150 °C, 98%
Ciss
1000
103
Coss
100
150 °C
25 °C, 98%
100
102
10
Crss
10
101
1
0
10
20
30
0.0
0.5
1.0
1.5
2.0
VDS [V]
VSD [V]
Rev. 2.1
page 6
2013-05-17
BSC050N03LS G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
15 V
6 V
24 V
25 °C
100 °C
10
6
125 °C
4
2
1
0
1
10
100
1000
0
8
16
24
32
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
34
32
30
28
26
24
22
20
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2013-05-17
BSC050N03LS G
Package Outline
PG-TDSON-8-5
PG-TDSON-8-5: Outline
Footprint
Dimensions in mm
Rev. 2.1
page 8
2013-05-17
BSC050N03LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1
page 9
2013-05-17
BSC050N03LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2013-05-17
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