BSC059N04LS G [INFINEON]
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
| 型号： | BSC059N04LS G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。 开关 电机 服务器 转换器 |
| 文件： | 总10页 (文件大小：519K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC059N04LS G
OptiMOS™3 Power-Transistor
Product Summary
Features
VDS
40
5.9
73
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
RDS(on),max
ID
mW
A
PG-TDSON-8
• N-channel; Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC059N04LS G
PG-TDSON-8
059N04LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
73
Parameter
Symbol Conditions
Unit
I D
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
Continuous drain current
A
46
V GS=4.5 V, T C=25 °C
62
39
V GS=4.5 V,
T C=100 °C
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
16
Pulsed drain current3)
I D,pulse
I AS
T C=25 °C
292
50
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
T C=25 °C
E AS
V GS
I D=50 A, R GS=25 W
25
mJ
V
±20
1) J-STD20 and JESD22
Rev. 2.1
page 1
2013-05-17
BSC059N04LS G
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P tot
T C=25 °C
Power dissipation
50
W
T A=25 °C,
R thJA=50 K/W2)
2.5
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
bottom
-
-
-
-
2.5
20
50
K/W
top
6 cm2 cooling area2)
R thJA
Device on PCB
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=23 µA
Drain-source breakdown voltage
Gate threshold voltage
40
-
-
-
V
1.2
2
V DS=40 V, V GS=0 V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
0.1
10
1
µA
V DS=40 V, V GS=0 V,
T j=125 °C
100
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
-
-
10
6.8
4.9
1.4
100 nA
R DS(on) V GS=4.5 V, I D=40 A
V GS=10 V, I D=50 A
R G
Drain-source on-state resistance
8.5
5.9
-
mW
Gate resistance
W
|V DS|>2|I D|R DS(on)max
I D=50 A
,
g fs
Transconductance
48
96
-
S
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See figure 3 for more detailed information
4) See figure 13 for more detailed information
Rev. 2.1
page 2
2013-05-17
BSC059N04LS G
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
-
-
-
-
-
-
-
2400
540
28
3200 pF
V GS=0 V, V DS=20 V,
f =1 MHz
C oss
Crss
t d(on)
t r
720
-
5.6
3.4
23
-
-
-
-
ns
V DD=20 V, V GS=10 V,
I D=30 A, R G=1.6 W
t d(off)
t f
Turn-off delay time
Fall time
3.8
Gate Charge Characteristics5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q gs
-
-
-
-
-
-
7.6
3.8
3.2
7.0
30
-
-
nC
Q g(th)
Q gd
-
V DD=20 V, I D=30 A,
V GS=0 to 10 V
Q sw
-
Q g
Gate charge total
40
-
V plateau
Gate plateau voltage
3.2
V
V DD=20 V, I D=30 A,
V GS=0 to 4.5 V
Q g
Gate charge total
-
14
19
nC
V DS=0.1 V,
V GS=0 to 10 V
Q g(sync)
Gate charge total, sync. FET
Output charge
-
-
28
20
-
-
Q oss
V DD=20 V, V GS=0 V
Reverse Diode
I S
Diode continuous forward current
Diode pulse current
-
-
-
-
42
A
T C=25 °C
I S,pulse
292
V GS=0 V, I F=50 A,
T j=25 °C
V SD
Diode forward voltage
-
-
0.88
23
1.2
-
V
V R=20 V, I F=I S,
di F/dt =400 A/µs
Q rr
Reverse recovery charge
nC
5) See figure 16 for gate charge parameter definition
Rev. 2.1
page 3
2013-05-17
BSC059N04LS G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
60
50
40
30
20
10
0
80
60
40
20
0
0
40
80
120
160
0
40
80
120
160
TC [°C]
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
10
limited by on-state
resistance
1 µs
10 µs
102
0.5
100 µs
1
0.2
0.1
DC
101
0.05
1 ms
0.02
0.1
10 ms
0.01
100
single pulse
0
0
0
0
0
0
1
0.01
10-1
10-6
10-5
10-4
10-3
tp [s]
10-2
10-1
100
10-1
100
101
102
VDS [V]
Rev. 2.1
page 4
2013-05-17
BSC059N04LS G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
20
5 V
10 V
4.5 V
160
16
3.2 V
3.5 V
120
80
40
0
12
4 V
4 V
8
4
0
4.5 V
5 V
10 V
3.5 V
3.2 V
3 V
2.8 V
0
1
2
3
0
10
20
30
40
50
VDS [V]
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
120
100
80
160
120
80
40
0
60
40
20
150 °C
25 °C
0
0
1
2
3
4
5
0
40
80
120
160
VGS [V]
ID [A]
Rev. 2.1
page 5
2013-05-17
BSC059N04LS G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=23 µA
10
8
2.5
2
98 %
6
1.5
1
typ
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz
)
parameter: T j
104
1000
Ciss
103
102
101
100
Coss
25 °C
150 °C, 98%
100
150 °C
25 °C, 98%
Crss
10
1
0
10
20
VDS [V]
30
40
0.0
0.5
1.0
VSD [V]
1.5
2.0
Rev. 2.1
page 6
2013-05-17
BSC059N04LS G
13 Avalanche characteristics
14 Typ. gate charge
V GS=f(Q gate); I D=30 A pulsed
parameter: V DD
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
12
10
8
20 V
8 V
32 V
25 °C
10
6
100 °C
4
125 °C
2
1
0
1
10
100
1000
0
5
10
15
20
25
30
35
tAV [µs]
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
45
40
35
30
25
20
V GS
Qg
V gs(th)
Qg(th)
Qsw
Qgd
Qgate
Qgs
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 2.1
page 7
2013-05-17
BSC059N04LS G
Package Outline
PG-TDSON-8
PG-TDSON-8-5: Outline
Footprint
Rev. 2.1
page 8
2013-05-17
BSC059N04LS G
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Rev. 2.1
page 9
2013-05-17
BSC059N04LS G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 10
2013-05-17
相关型号：
BSC059N04LS6
Power Field-Effect Transistor, 49A I(D), 40V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
INFINEON
BSC059N04LSGXT
Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC060N10NS3 G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
BSC060N10NS3GXT
Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC060P03NS3E G
英飞凌高度创新型 OptiMOS™ 系列包括 P 通道功率 MOSFET。这些产品始终满足电力系统设计关键规范中的至高质量和性能要求，例如导通电阻特性和品质因数特性。
INFINEON
BSC061N08NS5
OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.
INFINEON
BSC065N06LS5
英飞凌OptiMOS™ 5 功率 MOSFET 逻辑电平特别适用于无线充电、适配器和电信应用。该器件栅极电荷 (Q g) 低，降低开关损耗，而不影响导通损耗。改进品质因数，支持在高开关频率下运行。此外，逻辑电平驱动提供低栅极阈值电压 (V GS(th))，使 MOSFET 能够由 5V 驱动并且直接由微控制器驱动。
INFINEON
BSC067N06LS3GATMA1
Power Field-Effect Transistor, 15A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
©2020 ICPDF网 联系我们和版权申明